| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| BT151X-650C | WeEn Semiconductors | Silicon Controlled Rectifier, 12A I(T)RMS, 650V V(DRM), 650V V(RRM), 1 Element, TO-220AB, PLASTIC, TO-220F, FULL PACK-3 | 下载 |
| BT151X-650C | NXP(恩智浦) | Silicon Controlled Rectifier, 12 A, 650 V, SCR, PLASTIC, FULL PACK-3 | 下载 |
| BT151X-650C | Philips Semiconductors (NXP Semiconductors N.V.) | Silicon Controlled Rectifier, 7500mA I(T), 650V V(DRM), | 下载 |
| BT151X-650C,127 | NXP(恩智浦) | SCR | 下载 |
| BT151X-650C127 | NXP(恩智浦) | RS-232 Interface IC 5V MultiCh RS-232 Driver/Receiver | 下载 |
| BT151X-650C,127 | WeEn Semiconductors | Silicon Controlled Rectifier, 12A I(T)RMS, 650V V(DRM), 650V V(RRM), 1 Element, TO-220AB, PLASTIC, TO-220F, FULL PACK-3 | 下载 |
Silicon Controlled Rectifier, 7500mA I(T), 650V V(DRM),
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Philips Semiconductors (NXP Semiconductors N.V.) |
| 包装说明 | , |
| Reach Compliance Code | unknown |
| 标称电路换相断开时间 | 70 µs |
| 关态电压最小值的临界上升速率 | 50 V/us |
| 最大直流栅极触发电流 | 15 mA |
| 最大直流栅极触发电压 | 1.5 V |
| 最大维持电流 | 20 mA |
| JESD-609代码 | e3 |
| 最大漏电流 | 0.5 mA |
| 通态非重复峰值电流 | 110 A |
| 最大通态电压 | 1.75 V |
| 最大通态电流 | 7500 A |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -40 °C |
| 断态重复峰值电压 | 650 V |
| 表面贴装 | YES |
| 端子面层 | Matte Tin (Sn) |
| 触发设备类型 | SCR |
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