IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT151X-650C
SCR
16 March 2014
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack"
plastic package intended for use in applications requiring high bidirectional blocking
voltage capability and high thermal cycling performance.
2. Features and benefits
•
•
•
•
High bidirectional blocking voltage capability
High thermal cycling performance
Isolated mounting base package
Planar passivated for voltage ruggedness and reliability
3. Applications
•
•
•
•
•
Capacitive Discharge Ignition (CDI)
Crowbar protection
Inrush protection
Motor control
Voltage regulation
4. Quick reference data
Table 1.
Symbol
V
DRM
V
RRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
repetitive peak reverse
voltage
non-repetitive peak on- half sine wave; T
j(init)
= 25 °C;
state current
t
p
= 10 ms;
Fig. 4; Fig. 5
RMS on-state current
half sine wave; T
h
≤ 69 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 7
-
2
15
mA
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
650
650
100
12
Unit
V
V
A
A
Scan or click this QR code to view the latest information for this product
TO
-2
20F
NXP Semiconductors
BT151X-650C
SCR
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
K
A
G
n.c.
cathode
anode
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
A
G
sym037
K
1 2 3
TO-220F (SOT186A)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT151X-650C
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
Type number
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
half sine wave; T
h
≤ 69 °C
half sine wave; T
h
≤ 69 °C;
Fig. 1;
Fig. 2; Fig. 3
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms;
Fig. 4; Fig. 5
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
I t
dI
T
/dt
I
GM
BT151X-650C
Conditions
Min
-
-
-
-
-
-
-
-
-
Max
650
650
7.5
12
100
110
50
50
2
Unit
V
V
A
A
A
A
2
2
I t for fusing
rate of rise of on-state current
peak gate current
2
t
p
= 10 ms; SIN
I
T
= 20 A; I
G
= 50 mA; dI
G
/dt = 50 mA/
µs
A s
A/µs
A
2 / 11
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
16 March 2014
NXP Semiconductors
BT151X-650C
SCR
Symbol
V
RGM
P
GM
P
G(AV)
T
stg
T
j
60
I
T(RMS )
(A)
50
40
30
20
Parameter
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
Conditions
Min
-
-
Max
5
5
0.5
150
125
003aaj923
Unit
V
W
W
°C
°C
over any 20 ms period
-
-40
-
003aaj922
16
I
T(RMS)
(A)
12
69 °C
8
4
10
0
10
-2
0
-50
10
-1
1
10
s urg e d uration (s )
0
50
100
T
h
(°C)
150
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
Fig. 2.
RMS on-state current as a function of heatsink
temperature; maximum values
15
P
tot
(W)
10
4
conduction
angle
(degrees)
30
60
90
120
180
0
2
4
6
form
factor
a
4
2.8
2.2
1.9
1.57
α
003aaj919
57.5
T
h(max)
(°C)
80
a = 1.57
2.2
2.8
1.9
5
102.5
0
I
T(AV)
(A)
8
125
Fig. 3.
Total power dissipation as a function of average on-state current; maximum values
BT151X-650C
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
16 March 2014
3 / 11
NXP Semiconductors
BT151X-650C
SCR
160
I
TSM
(A)
120
003aaj924
80
I
T
I
TSM
40
t
t
p
T
j(init)
= 25 °C max
0
1
10
10
2
n (number of cycles)
10
3
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
10
3
I
TSM
(A)
(1)
003aaj929
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig. 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
8. Thermal characteristics
Table 5.
Symbol
R
th(j-h)
Thermal characteristics
Parameter
thermal resistance
from junction to
heatsink
thermal resistance
from junction to
ambient
Conditions
with heatsink compound;
Fig. 6
without heatsink compound;
Fig. 6
in free air
Min
-
-
-
Typ
-
-
55
Max
4.5
6.5
-
Unit
K/W
K/W
K/W
R
th(j-a)
BT151X-650C
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
16 March 2014
4 / 11
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