BT151X-650C
23 July 2012
SCR
Product data sheet
1. Product profile
1.1 General description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack"
plastic package intended for use in applications requiring high bidirectional blocking
voltage capability and high thermal cycling performance.
1.2 Features and benefits
•
High bidirectional blocking voltage capability
•
High thermal cycling performance
•
Isolated mounting base package
•
Planar passivated for voltage ruggedness and reliability
1.3 Applications
•
Capacitive Discharge Ignition (CDI)
•
Crowbar protection
•
Inrush protection
•
Motor control
•
Voltage regulation
1.4 Quick reference data
Table 1.
Symbol
V
DRM
V
RRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
repetitive peak reverse
voltage
non-repetitive peak on- half sine wave; T
j(init)
= 25 °C;
state current
t
p
= 10 ms;
Fig. 4; Fig. 5
RMS on-state current
half sine wave; T
h
≤ 69 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 7
-
2
15
mA
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
650
650
100
12
Unit
V
V
A
A
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NXP Semiconductors
BT151X-650C
SCR
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
K
A
G
n.c.
cathode
anode
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
A
G
sym037
K
1 2 3
TO-220F (SOT186A)
3. Ordering information
Table 3.
Ordering information
Package
Name
BT151X-650C
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
half sine wave; T
h
≤ 69 °C
half sine wave; T
h
≤ 69 °C;
Fig. 1;
Fig. 2; Fig. 3
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms;
Fig. 4; Fig. 5
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
I t
dI
T
/dt
I
GM
BT151X-650C
Conditions
Min
-
-
-
-
-
-
-
-
-
Max
650
650
7.5
12
100
110
50
50
2
Unit
V
V
A
A
A
A
2
2
I t for fusing
rate of rise of on-state current
peak gate current
2
t
p
= 10 ms; SIN
I
T
= 20 A; I
G
= 50 mA; dI
G
/dt = 50 mA/
µs
A s
A/µs
A
2 / 11
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
23 July 2012
NXP Semiconductors
BT151X-650C
SCR
Symbol
V
RGM
P
GM
P
G(AV)
T
stg
T
j
60
I
T(RMS )
(A)
50
40
30
20
Parameter
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
Conditions
Min
-
-
Max
5
5
0.5
150
125
003aaj923
Unit
V
W
W
°C
°C
over any 20 ms period
-
-40
-
003aaj922
16
I
T(RMS)
(A)
12
69 °C
8
4
10
0
10
-2
0
-50
10
-1
1
10
s urg e d uration (s )
0
50
100
T
h
(°C)
150
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
Fig. 2.
RMS on-state current as a function of heatsink
temperature; maximum values
15
P
tot
(W)
10
4
conduction
angle
(degrees)
30
60
90
120
180
0
2
4
6
form
factor
a
4
2.8
2.2
1.9
1.57
α
003aaj919
57.5
T
h(max)
(°C)
80
a = 1.57
2.2
2.8
1.9
5
102.5
0
I
T(AV)
(A)
8
125
Fig. 3.
Total power dissipation as a function of average on-state current; maximum values
BT151X-650C
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© NXP B.V. 2012. All rights reserved
Product data sheet
23 July 2012
3 / 11
NXP Semiconductors
BT151X-650C
SCR
160
I
TSM
(A)
120
003aaj924
80
I
T
I
TSM
40
t
t
p
T
j(init)
= 25 °C max
0
1
10
10
2
n (number of cycles)
10
3
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
10
3
I
TSM
(A)
(1)
003aaj929
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig. 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
5. Thermal characteristics
Table 5.
Symbol
R
th(j-h)
Thermal characteristics
Parameter
thermal resistance
from junction to
heatsink
thermal resistance
from junction to
ambient
Conditions
with heatsink compound;
Fig. 6
without heatsink compound;
Fig. 6
in free air
Min
-
-
-
Typ
-
-
55
Max
4.5
6.5
-
Unit
K/W
K/W
K/W
R
th(j-a)
BT151X-650C
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© NXP B.V. 2012. All rights reserved
Product data sheet
23 July 2012
4 / 11
NXP Semiconductors
BT151X-650C
SCR
10
Z
th(j-h)
(K/W)
1
(1)
(2)
003aaj933
10
-1
P
δ=
t
p
T
10
-2
t
p
t
T
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
(1) Without heatsink compound
(2) With heatsink compound
Fig. 6.
Transient thermal impedance from junction to heatsink as a function of pulse width
6. Isolation characteristics
Table 6.
Symbol
V
isol(RMS)
Isolation characteristics
Parameter
RMS isolation voltage
Conditions
from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free ; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
T
h
= 25 °C
from anode to external heatsink ;
f = 1 MHz; T
h
= 25 °C
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
7. Characteristics
Table 7.
Symbol
I
GT
I
L
I
H
V
T
V
GT
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
Conditions
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
G
= 0.1 A; T
j
= 25 °C;
Fig. 8
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 23 A; T
j
= 25 °C;
Fig. 10
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
V
D
= 650 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 11
BT151X-650C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Min
-
-
-
-
-
0.25
Typ
2
10
7
1.4
0.6
0.4
Max
15
40
20
1.75
1.5
-
Unit
mA
mA
mA
V
V
V
Static characteristics
Product data sheet
23 July 2012
5 / 11
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