| 器件名 |
厂商 |
描 述 |
功能 |
| SI4800 |
Philips Semiconductors (NXP Semiconductors N.V.) |
N-channel enhancement mode field-effect transistor |
下载
|
| SI4800 |
NXP(恩智浦) |
TRANSISTOR 9 A, 30 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power |
下载
|
| SI4800518 |
NXP(恩智浦) |
MOSFET TAPE13 MOSFET |
下载
|
| SI4800,518 |
NXP(恩智浦) |
SI4800 |
下载
|
| SI4800BD_V01 |
Vishay(威世) |
N-Channel Reduced Qg, Fast Switching MOSFET |
下载
|
| SI4800BDY |
Vishay(威世) |
6500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
下载
|
| SI4800BDY_17 |
Vishay(威世) |
N-Channel Reduced Qg, Fast Switching MOSFET |
下载
|
| SI4800BDY-E3 |
Vishay(威世) |
Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 |
下载
|
| SI4800BDY-T1 |
Vishay(威世) |
6500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
下载
|
| SI4800BDY-T1-E3 |
台湾微碧(VBsemi) |
N-Channel 30-V (D-S) MOSFET |
下载
|
| SI4800BDY-T1-E3 |
Vishay(威世) |
MOSFET 30V 9A 2.5W |
下载
|
| SI4800BDY-T1-GE3 |
Vishay(威世) |
漏源电压(Vdss):30V 连续漏极电流(Id)(25°C 时):6.5A 栅源极阈值电压:1.8V @ 250uA 漏源导通电阻:18.5mΩ @ 9A,10V 最大功率耗散(Ta=25°C):1.3W 类型:N沟道 N沟道,30V,9A,18.5mΩ@10V |
下载
|
| SI4800BDY_V01 |
Vishay(威世) |
N-Channel Reduced Qg, Fast Switching MOSFET |
下载
|
| SI4800DY |
Vishay(威世) |
MOSFET 30V 9A 2.5W |
下载
|
| SI4800DY-E3 |
Vishay(威世) |
MOSFET 30V 9A 2.5W |
下载
|
| SI4800DY-T1 |
Vishay(威世) |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
下载
|
| SI4800DY-T1-E3 |
Vishay(威世) |
MOSFET 30V 9A 2.5W |
下载
|
| SI4800DY-T1-E3 |
台湾微碧(VBsemi) |
N-Channel 20V (D-S) MOSFET |
下载
|
| SI4800/T3 |
NXP(恩智浦) |
TRANSISTOR 9 A, 30 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power |
下载
|