Si4800DY
Vishay Siliconix
N-Channel Reducded Q
g
, Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.0185 @ V
GS
= 10 V
0.033 @ V
GS
= 4.5 V
I
D
(A)
9
7
D D
D D
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information: Si4800DY
Si4800DY-T1 (with Tape and Reel)
8
7
6
5
D
D
D
D
N-Channel MOSFET
G
S
S S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a, b
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
a, b
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
"25
9
7
40
2.3
2.5
1.6
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient (MOSFET)
a
Junction-to-Ambient
t
v
10 sec
Steady State
R
thJA
70
Symbol
Typical
Maximum
50
Unit
_C/W
Notes
a. Surface Mounted on FR4 Board.
b. t
v
10 sec.
Document Number: 70856
S-31062—Rev. B, 26-May-03
www.vishay.com
1
Si4800DY
Vishay Siliconix
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 9 A
V
GS
= 4.5 V, I
D
= 7 A
V
DS
= 15 V, I
D
= 9 A
I
S
= 2.3 A, V
GS
= 0 V
30
0.0155
0.0275
16
0.71
1.2
0.0185
0.033
S
V
0.8
"100
1
5
V
nA
mA
A
W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.3 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
0.5
V
DS
= 15 V, V
GS
= 5.0 V, I
D
= 9 A
8.7
2.25
4.2
1.5
11
8
22
9
50
2.6
16
15
30
15
80
ns
W
13
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 70856
S-31062—Rev. B, 26-May-03
Si4800DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
V
GS
= 10 thru 5 V
32
4V
I
D
- Drain Current (A)
24
I
D
- Drain Current (A)
24
32
40
Transfer Characteristics
16
3V
8
16
T
C
= 125_C
8
25_C
- 55_C
0
0
2
4
6
8
10
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.15
r
DS(on)
- On-Resistance (
W
)
1200
Capacitance
C - Capacitance (pF)
0.12
1000
C
iss
800
0.09
600
C
oss
400
0.06
V
GS
= 4.5 V
0.03
V
GS
= 10 V
200
C
rss
0.00
0
8
16
24
32
40
0
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 9 A
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
0.4
- 50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 9 A
6
4
2
r
DS(on)
- On-Resistance (
W)
(Normalized)
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
Document Number: 70856
S-31062—Rev. B, 26-May-03
www.vishay.com
3
Si4800DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
0.20
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
- On-Resistance (
W
)
0.16
I
S
- Source Current (A)
10
T
J
= 150_C
T
J
= 25_C
0.12
I
D
= 9 A
0.08
0.04
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
0.6
0.4
0.2
V
GS(th)
Variance (V)
- 0.0
- 0.2
- 0.4
- 0.6
5
- 0.8
- 1.0
- 50
0
- 25
0
25
50
75
100
125
150
0.01
Power (W)
20
I
D
= 250
mA
30
25
Single Pulse Power
15
10
0.1
1
Time (sec)
10
30
T
J
- Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 125_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
100
600
Square Wave Pulse Duration (sec)
www.vishay.com
4
Document Number: 70856
S-31062—Rev. B, 26-May-03
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
医疗电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
