| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| IRFP90N20D | International Rectifier ( Infineon ) | Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=94A) | 下载 |
| IRFP90N20D | ISC | N-Channel MOSFET Transistor | 下载 |
| IRFP90N20DPBF | Infineon(英飞凌) | Single Board Computers BL2600 Wolf | 下载 |
| IRFP90N20DPBF | International Rectifier ( Infineon ) | 90 A, 200 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC | 下载 |
| IRFP90N20DPBF | IR | 漏源电压(Vdss):200V 连续漏极电流(Id)(25°C 时):94A 栅源极阈值电压:5V @ 250uA 漏源导通电阻:23mΩ @ 56A,10V 最大功率耗散(Ta=25°C):580W 类型:N沟道 N沟道,200V,94A,23mΩ@10V | 下载 |
| IRFP90N20DPBF_15 | International Rectifier ( Infineon ) | High frequency DC-DC converters | 下载 |
| IRFP9113 | Thomson Consumer Electronics | Transistor | 下载 |
| IRFP9120 | ISC | isc N-Channel MOSFET Transistor | 下载 |
| IRFP9121 | ISC | isc N-Channel MOSFET Transistor | 下载 |
| IRFP9122 | ISC | isc N-Channel MOSFET Transistor | 下载 |
| IRFP9123 | ISC | isc N-Channel MOSFET Transistor | 下载 |
| IRFP9130 | SAMSUNG(三星) | 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
| IRFP9131 | ISC | isc N-Channel MOSFET Transistor | 下载 |
| IRFP9131 | SAMSUNG(三星) | 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
| IRFP9132 | ISC | isc N-Channel MOSFET Transistor | 下载 |
| IRFP9132 | SAMSUNG(三星) | 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
| IRFP9133 | ISC | isc N-Channel MOSFET Transistor | 下载 |
| IRFP9133 | SAMSUNG(三星) | 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
| IRFP9140 | ISC | isc N-Channel MOSFET Transistor | 下载 |
| IRFP9140 | SAMSUNG(三星) | 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247 | 下载 |
| IRFP9140 | Intersil ( Renesas ) | 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247 | 下载 |
| IRFP9140 | Vishay(威世) | MOSFET P-Chan 100V 21 Amp | 下载 |
| IRFP9140 | Rochester Electronics | 19A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247 | 下载 |
| IRFP9140 | Fairchild | Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 下载 |
| IRFP9140 | Thomson Consumer Electronics | Transistor | 下载 |
| IRFP9140 | Harris | Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 下载 |
| IRFP9140 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 21A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 下载 |
| IRFP9140 | Renesas(瑞萨电子) | 19A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247 | 下载 |
| IRFP9140N | Infineon(英飞凌) | MOSFET P-CH 100V 23A TO-247AC | 下载 |
| IRFP9140N | International Rectifier ( Infineon ) | Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| IRFP9141 、 IRFP9141PBF 、 IRFP9141PBF 、 IRFP9143 、 IRFP9143PBF 、 IRFP9143PBF 、 IRFP9242 | 下载文档 |
| IRFP9141 、 IRFP9141 、 IRFP9142 、 IRFP9142 、 IRFP9143 、 IRFP9143 | 下载文档 |
| IRFP9240 、 IRFP9241 、 IRFP9241 、 IRFP9242 、 IRFP9242 | 下载文档 |
| IRFP9141 、 IRFP9142 、 IRFP9143 、 IRFP9241 、 IRFP9242 | 下载文档 |
| IRFP9140 、 IRFP9142 、 IRFP9143 、 IRFP9240 、 IRFP9242 | 下载文档 |
| IRFP9140R 、 IRFP9141R 、 IRFP9142R 、 IRFP9143R | 下载文档 |
| IRFP9130 、 IRFP9131 、 IRFP9132 、 IRFP9133 | 下载文档 |
| IRFP9240 、 IRFP9241 、 IRFP9242 | 下载文档 |
| IRFP9240 、 IRFP9241 、 IRFP9242 | 下载文档 |
| IRFP9140 、 IRFP9141 、 IRFP9143 | 下载文档 |
| 型号 | IRFP9141 | IRFP9141PBF | IRFP9141PBF | IRFP9143 | IRFP9143PBF | IRFP9143PBF | IRFP9242 |
|---|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 19A I(D), 80V, 2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, | Power Field-Effect Transistor, 19A I(D), 80V, 2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 19A, 80V, 2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247AC | Power Field-Effect Transistor, 16A I(D), 80V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, | Power Field-Effect Transistor, 16A I(D), 80V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 16A, 80V, 3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247AC | Power Field-Effect Transistor, 10A I(D), 200V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, |
| 是否Rohs认证 | 不符合 | 符合 | 符合 | 不符合 | 符合 | 符合 | 不符合 |
| 厂商名称 | Infineon(英飞凌) | International Rectifier ( Infineon ) | Infineon(英飞凌) | Infineon(英飞凌) | International Rectifier ( Infineon ) | Infineon(英飞凌) | Infineon(英飞凌) |
| Reach Compliance Code | unknown | compliant | compliant | unknown | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V | 200 V |
| 最大漏极电流 (ID) | 19 A | 19 A | 19 A | 16 A | 16 A | 16 A | 10 A |
| 最大漏源导通电阻 | 2 Ω | 2 Ω | 2 Ω | 3 Ω | 3 Ω | 3 Ω | 0.7 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-247AC | TO-247AC | TO-247AC | TO-247AC | TO-247AC | TO-247AC | TO-247AC |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609代码 | e3 | e3 | e3 | e3 | e3 | e3 | e3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | 250 | NOT SPECIFIED | NOT SPECIFIED | 250 | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 76 A | 76 A | 76 A | 64 A | 64 A | 64 A | 40 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO |
| 端子面层 | Matte Tin (Sn) - with Nickel (Ni) barrier | MATTE TIN OVER NICKEL | Matte Tin (Sn) - with Nickel (Ni) barrier | Matte Tin (Sn) - with Nickel (Ni) barrier | MATTE TIN OVER NICKEL | Matte Tin (Sn) - with Nickel (Ni) barrier | Matte Tin (Sn) - with Nickel (Ni) barrier |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | 30 | NOT SPECIFIED | NOT SPECIFIED | 30 | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 最大漏极电流 (Abs) (ID) | 19 A | - | 19 A | 16 A | - | 16 A | 10 A |
| 最高工作温度 | 150 °C | - | 150 °C | 150 °C | - | 150 °C | 150 °C |
| 最大功率耗散 (Abs) | 150 W | - | 150 W | 150 W | - | 150 W | 150 W |
| 包装说明 | - | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | - | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
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