12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
12 A, 100 V, 0.3 ohm, P沟道, 硅, POWER, 场效应管, TO-220AB
| 参数名称 | 属性值 |
| 厂商名称 | SAMSUNG(三星) |
| 零件包装代码 | TO-3P |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 2 |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 雪崩能效等级（Eas） | 550 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V |
| 最大漏极电流 (Abs) (ID) | 10 A |
| 最大漏极电流 (ID) | 10 A |
| 最大漏源导通电阻 | 0.4 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSFM-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | P-CHANNEL |
| 功耗环境最大值 | 75 W |
| 最大功率耗散 (Abs) | 75 W |
| 最大脉冲漏极电流 (IDM) | 40 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 最大关闭时间（toff） | 280 ns |
| 最大开启时间（吨） | 200 ns |
| IRFP9133 | IRF9530 | IRFP9130 | IRFP9131 | IRFP9132 | |
|---|---|---|---|---|---|
| 描述 | 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
| 零件包装代码 | TO-3P | SFM | TO-3P | TO-3P | TO-3P |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 2 | 3 | 2 | 2 | 2 |
| Reach Compliance Code | unknow | unknown | unknow | unknow | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 550 mJ | 550 mJ | 550 mJ | 550 mJ | 550 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V | 100 V | 100 V | 60 V | 100 V |
| 最大漏极电流 (Abs) (ID) | 10 A | 12 A | 12 A | 12 A | 10 A |
| 最大漏极电流 (ID) | 10 A | 12 A | 12 A | 12 A | 10 A |
| 最大漏源导通电阻 | 0.4 Ω | 0.3 Ω | 0.3 Ω | 0.3 Ω | 0.4 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 功耗环境最大值 | 75 W | 75 W | 75 W | 75 W | 75 W |
| 最大功率耗散 (Abs) | 75 W | 88 W | 75 W | 75 W | 75 W |
| 最大脉冲漏极电流 (IDM) | 40 A | 48 A | 48 A | 48 A | 40 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 最大关闭时间（toff） | 280 ns | 280 ns | 280 ns | 280 ns | 280 ns |
| 最大开启时间（吨） | 200 ns | 200 ns | 200 ns | 200 ns | 200 ns |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
