CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
TEST CONDITIONS
V
GS
= 0V, I
D
= -250µA, (Figure 10)
V
DS
= V
GS
, I
D
= -250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON)
x
r
DS(ON) MAX
, V
GS
= -10V
V
GS
=
±20V
V
GS
= -10V, I
D
= -10A, (Figures 8, 9)
V
DS
≤
-50V, I
D
= -10A, (Figure 12)
V
DD
= -50V, I
D
≈
-19A, R
G
= 9.1Ω, R
L
= 2.5Ω,
V
GS
= -10V, (Figures 17, 18)
MOSFET Switching Times Are Essentially Indepen-
dent of Operating Temperature
V
GS
= -10V, I
D
= -19A, V
DS
= 0.8 x Rated BV
DSS,
I
G(REF)
= -1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of Operating
Temperature
V
GS
= 0V, V
DS
= -25V, f = 1.0MHz, (Figure 11)
MIN
-100
-2.0
-
-
-19
-
-
5.3
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
0.14
7.9
16
65
47
28
37
8.7
22
1200
570
160
5.0
MAX
-
-4.0
25
250
-
±100
0.20
-
20
100
70
70
55
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured Between Contact
Screw on Header That Is
Closer to Source and Gate
Pins and Center of Die
Measured From the Source
Pin, 6mm (0.25in) From
Header and Source Bond-
ing Pad
Modified MOSFET
Symbol Showing the In-
ternal Device Induc-
tances
D
L
D
G
L
S
S
-
Internal Source Inductance
L
S
-
13
-
nH
Junction to Case
Junction to Ambient
R
θJC
R
θJA
Free Air Operation
-
-
-
-
0.83
30
o
C/W
0
C/W
4-58
IRFP9140
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET Symbol
Showing the Integral Re-
verse P-N Junction
Diode
G
D
MIN
-
-
TYP
-
-
MAX
-19
-76
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= -19A, V
GS
= 0V, (Figure 13)
T
J
= 25
o
C, I
SD
= -18A, dI
SD
/dt = 100A/µs
T
J
= 25
o
C, I
SD
= -18A, dI
SD
/dt = 100A/µs
-
-
-
-
210
2.0
-1.5
-
-
V
ns
µC
2. Pulse test: pulse width
≤
80µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
当今的计算机外部设备，都在追求高速度和高通用性。为了满足用户的需求，以Intel为首的七家公司于1994年推出了USB（Universal Serial Bus，通用串行总线）总线协议，专用于低、中速的计算机外设。目前，USB端口已成为微机主板的标准端口；而在不久的将来，所有的微机外设，包括键盘、鼠标、显示器、打印机、数字相机、扫描仪和游戏柄等等，都将通过USB与主机相连。
...[详细]
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
