PD - 9.1492A
PRELIMINARY
l
l
l
l
l
l
IRFP9140N
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
P-Channel
Fast Switching
Fully Avalanche Rated
V
DSS
= -100V
R
DS(on)
= 0.117Ω
G
S
I
D
= -23A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Max.
-23
-16
-76
140
0.91
± 20
430
-11
14
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
1.1
–––
40
Units
°C/W
3/16/98
IRFP9140N
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-100
–––
–––
-2.0
5.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
67
51
51
5.0
13
1300
400
240
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
0.117
Ω
V
GS
= -10V, I
D
= -13A
-4.0
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -50V, I
D
= 11A
-25
V
DS
= -100V, V
GS
= 0V
µA
-250
V
DS
= -80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
97
I
D
= -11A
15
nC V
DS
= -80V
51
V
GS
= -10V, See Fig. 6 and 13
–––
V
DD
= -50V
–––
I
D
= -11A
ns
–––
R
G
= 5.1Ω
–––
R
D
= 4.2Ω, See Fig. 10
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
V
GS
= 0V
–––
pF
V
DS
= -25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -23
showing the
A
G
integral reverse
––– ––– -76
p-n junction diode.
S
––– ––– -1.3
V
T
J
= 25°C, I
S
= -13A, V
GS
= 0V
––– 150 220
ns
T
J
= 25°C, I
F
= -11A
––– 830 1200 µC di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Uses IRF9540N data and test conditions
Starting T
J
= 25°C, L = 7.1mH
R
G
= 25Ω, I
AS
= -11A. (See Figure 12)
I
SD
≤
-11A, di/dt
≤
-470A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
IRFP9140N
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
100
-ID , D rain-to-S ource C urrent (A )
-ID , D rain-to-S ource C urrent (A )
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
10
10
-4.5V
20µ s P U LS E W ID TH
T
C
= 175°C
0.1
1
10
-4.5V
1
0.1
1
20µ s P U LS E W ID TH
T c = 25°C
A
10
100
1
100
A
-VD S , D rain-to-S ource V oltage (V )
-VD S , D rain-to-S ource V oltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
T
J
= 2 5 °C
T
J
= 1 7 5 °C
10
R
D S (on )
, D rain-to -S ource O n R esistance
(N orm alized)
I
D
= -19A
-I
D
, D rain-to -S o urc e C urre nt (A )
2.0
1.5
1.0
1
0.5
0.1
4
5
6
7
V
D S
= -2 5 V
2 0 µ s P U L S E W ID T H
8
9
10
A
0.0
-60 -40 -20
0
20
40
60
80
V
G S
= -10V
100 120 140 160 180
A
-V
G S
, G a te -to -S o u rc e V o lta g e (V )
T
J
, Junction T em perature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRFP9140N
3000
2500
-V
G S
, G ate-to-S ource V oltage (V )
V
GS
C
is s
C
rs s
C
oss
=
=
=
=
0V ,
f = 1M H z
C
gs
+ C
gd
, C
ds
S H O R TE D
C
gd
C
ds
+ C
gd
20
I
D
= -1 1A
V
D S
= -80V
V
D S
= -50V
V
D S
= -20V
16
C , C apacitanc e (pF )
2000
C
is s
12
1500
C
os s
1000
8
C
rs s
500
4
0
1
10
100
A
0
0
20
40
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
60
80
A
100
-V
D S
, D rain-to-S ource V oltage (V )
Q
G
, Total G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
S D
, R everse D rain C urrent (A )
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R
D S (on)
10
-I
D
, D rain C urrent (A )
100
T
J
= 175°C
T
J
= 25°C
10 0µ s
10
1m s
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V
G S
= 0V
1.4
A
1
1
T
C
= 25°C
T
J
= 175°C
S ingle P uls e
10
10m s
1.6
A
100
1000
-V
S D
, S ource-to-D rain V oltage (V )
-V
D S
, D rain-to-S ource V oltage (V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRFP9140N
25
V
DS
20
R
D
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
15
-10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
10
Fig 10a.
Switching Time Test Circuit
5
t
d(on)
t
r
t
d(off)
t
f
V
GS
0
25
50
75
100
125
150
175
10%
T
C
, Case Temperature ( ° C)
90%
Fig 9.
Maximum Drain Current Vs.
Case Temperature
V
DS
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
P
DM
t
1
t
2
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
-
V
DD
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