16k X 1 high speed cmos static ram
IS61C67 | IS61C67-L20N | IS61C67-25N | IS61C67-L25N | IS61C67-15N | IS61C67-20N | IS61C67-L15N | |
---|---|---|---|---|---|---|---|
描述 | 16k X 1 high speed cmos static ram | 16k X 1 high speed cmos static ram | 16k X 1 high speed cmos static ram | 16k X 1 high speed cmos static ram | 16k X 1 high speed cmos static ram | 16k X 1 high speed cmos static ram | 16k X 1 high speed cmos static ram |
是否Rohs认证 | - | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | - | Integrated Silicon Solution ( ISSI ) | - | Integrated Silicon Solution ( ISSI ) | - | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
包装说明 | - | 0.300 INCH, PLASTIC, DIP-20 | DIP, DIP20,.3 | 0.300 INCH, PLASTIC, DIP-20 | DIP, DIP20,.3 | 0.300 INCH, PLASTIC, DIP-20 | 0.300 INCH, PLASTIC, DIP-20 |
Reach Compliance Code | - | unknown | not_compliant | unknown | not_compliant | unknown | unknown |
ECCN代码 | - | EAR99 | - | EAR99 | - | EAR99 | EAR99 |
最长访问时间 | - | 20 ns | 25 ns | 25 ns | 15 ns | 20 ns | 15 ns |
I/O 类型 | - | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
JESD-30 代码 | - | R-PDIP-T20 | R-PDIP-T20 | R-PDIP-T20 | R-PDIP-T20 | R-PDIP-T20 | R-PDIP-T20 |
JESD-609代码 | - | e0 | e0 | e0 | e0 | e0 | e0 |
长度 | - | 25.527 mm | 25.527 mm | 25.527 mm | 25.527 mm | 25.527 mm | 25.527 mm |
内存密度 | - | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit |
内存集成电路类型 | - | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
内存宽度 | - | 1 | 1 | 1 | 1 | 1 | 1 |
功能数量 | - | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | - | 20 | 20 | 20 | 20 | 20 | 20 |
字数 | - | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
字数代码 | - | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 |
工作模式 | - | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | - | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | - | 16KX1 | 16KX1 | 16KX1 | 16KX1 | 16KX1 | 16KX1 |
输出特性 | - | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | - | DIP | DIP | DIP | DIP | DIP | DIP |
封装等效代码 | - | DIP20,.3 | DIP20,.3 | DIP20,.3 | DIP20,.3 | DIP20,.3 | DIP20,.3 |
封装形状 | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | - | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
并行/串行 | - | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
电源 | - | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
认证状态 | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | - | 4.572 mm | 4.572 mm | 4.572 mm | 4.572 mm | 4.572 mm | 4.572 mm |
最大待机电流 | - | 0.0001 A | 0.002 A | 0.0001 A | 0.004 A | 0.003 A | 0.0001 A |
最小待机电流 | - | 2 V | 4.5 V | 2 V | 4.5 V | 4.5 V | 2 V |
最大压摆率 | - | 0.085 mA | 0.075 mA | 0.075 mA | 0.1 mA | 0.085 mA | 0.1 mA |
最大供电电压 (Vsup) | - | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | - | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | - | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | - | NO | NO | NO | NO | NO | NO |
技术 | - | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | - | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子面层 | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子节距 | - | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
端子位置 | - | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
宽度 | - | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm |
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