Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | International Rectifier （ Infineon ） |
| 零件包装代码 | TO-252AA |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 雪崩能效等级（Eas） | 1440 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V |
| 最大漏极电流 (ID) | 30 A |
| 最大漏源导通电阻 | 0.0033 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-252AA |
| JESD-30 代码 | R-PSSO-G2 |
| JESD-609代码 | e0 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 620 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | TIN LEAD |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| IRLR7843TRR | IRLU7843 | IRLR7843TRRPBF | IRLU7843-701PBF | IRLR7843TRL | IRLR7843CTRLPBF | IRLR7843CTRRPBF | IRLR7843HR | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | HEXFET Power MOSFET | mosfet N-CH 30v 161a dpak | mosfet N-CH 30v 161a ipak | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 |
| 是否Rohs认证 | 不符合 | 不符合 | 符合 | - | - | 符合 | 符合 | 不符合 |
| 厂商名称 | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | - | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） |
| 零件包装代码 | TO-252AA | TO-251AA | TO-252AA | - | TO-252AA | TO-252AA | TO-252AA | TO-252AA |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | LEAD FREE, PLASTIC, DPAK-3 | - | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 | 3 | 3 | - | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | compliant | unknown | - | unknown | unknown | unknown | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 1440 mJ | 1440 mJ | 1440 mJ | - | 1440 mJ | 1440 mJ | 1440 mJ | 1440 mJ |
| 外壳连接 | DRAIN | DRAIN | DRAIN | - | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V | 30 V | 30 V | - | 30 V | 30 V | 30 V | 30 V |
| 最大漏极电流 (ID) | 30 A | 30 A | 30 A | - | 30 A | 30 A | 30 A | 30 A |
| 最大漏源导通电阻 | 0.0033 Ω | 0.0033 Ω | 0.0033 Ω | - | 0.0033 Ω | 0.0033 Ω | 0.0033 Ω | 0.0033 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-252AA | TO-251AA | TO-252AA | - | TO-252AA | TO-252AA | TO-252AA | TO-252AA |
| JESD-30 代码 | R-PSSO-G2 | R-PSIP-T3 | R-PSSO-G2 | - | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609代码 | e0 | e0 | e3 | - | e0 | e3 | e3 | e0 |
| 湿度敏感等级 | 1 | 1 | 1 | - | 1 | 1 | 1 | 1 |
| 元件数量 | 1 | 1 | 1 | - | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 3 | 2 | - | 2 | 2 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | 245 | 260 | - | 260 | 260 | 260 | 245 |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 620 A | 620 A | 620 A | - | 620 A | 620 A | 620 A | 620 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | - |
| 表面贴装 | YES | NO | YES | - | YES | YES | YES | YES |
| 端子面层 | TIN LEAD | Tin/Lead (Sn/Pb) | MATTE TIN OVER NICKEL | - | TIN LEAD | MATTE TIN OVER NICKEL | MATTE TIN OVER NICKEL | TIN LEAD |
| 端子形式 | GULL WING | THROUGH-HOLE | GULL WING | - | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | 30 | 30 | - | NOT SPECIFIED | 30 | 30 | 30 |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | - | SILICON | SILICON | SILICON | SILICON |
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