BL
FEATURES
GALAXY ELECTRICAL
BYT52A(Z)---BYT52M(Z)
VOLT AGE RANGE: 50 --- 1000 V
CURRENT: 1.4 A
FAST RECOVERY RECT IFIERS
Low cos t
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon, Alcohol,Is opropanol and
s im ilar s olvents
DO - 15
MECHANICAL DATA
Cas e:JEDEC DO--15,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces ,0.39 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%.
BYT
52A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T
A
=75
BYT
52B
100
70
10
BYT
52D
200
140
200
BYT
52G
400
280
400
1.4
BYT
52J
600
420
600
BYT
52K
800
560
800
BYT
52M
1000
700
1000
UNITS
V
V
V
A
V
RR M
V
R MS
V
DC
I
F(AV)
50
35
50
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
V
F
I
R
t
rr
C
J
R
qJA
T
J
T
STG
50.0
A
Maximum instantaneous f orw ard voltage
(
@ 1.0A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
1.3
5.0
100.0
200
18
45
-55 ---- + 150
-55 ---- + 150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
N OTE:1. Meas ured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V D C .
3. Therm al resistance f rom junction to am bient.
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Document Number 0261043
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
50
N.1.
10
N.1.
t
rr
BYT52A(Z)---BYT52M(Z)
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
+0.5A
D.U.T.
(+)
50VDC
(APPROX)
(-)
1
N.1.
( - )
0
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
( + )
-0.25A
-1.0A
NOTE
S:1.R TIM =7ns M IN UT IM E
ISE E
AX. P
P DANCE
=1M .22pF
2.RISETIM =10ns M SOURCEIM E
E
AX.
P DANCE
=5O
SE TIM BASEFOR 50/100 ns /cm
T E
1cm
FIG.2 --FORWARD DERATING CURVE
PEAK FORWARD SURGE CURRENT
AMPERES
FIG.3 --PEAK FORWARD SURGE CURRENT
AVERAGE FORWARD CURRENT
AMPERES
90
2.0
1.5
1.0
0.5
0.1
0.05
0.001
0
20
40
60
80
Single Phase
Half W 60H
Z
ave
Resistive or
Inductive Load
70
50
T
J
=125
8.3ms Single Half
Sine-Wave
30
10
100
120
180
0
1
10
100
AMBIENT TEMPERATURE,
NUMBER OF CYCLES AT 60 Hz
FIG.4--TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT
AMPERES
FIG.5--TYPICAL JUNCTION CAPACITANCE
100
10
T
J
=25
Pulse Width=300
µ
S
JUNCTION CAPACITANCE,pF
100
60
40
4
2
1. 0
0.4
0.2
0.1
0.06
0.04
0.02
0 .0 1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
20
10
4
2
1
.1
.2
T
J
=25
f=1MHz
.4
1.0
2
4
10
20
40
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
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2.
Document Number 0261043
BL
GALAXY ELECTRICAL
嵌入式系统
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