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BYT52BZ

产品描述0.85 A, 600 V, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小62KB,共2页
制造商BILIN
官网地址http://www.galaxycn.com/
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BYT52BZ概述

0.85 A, 600 V, SILICON, SIGNAL DIODE

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BL
FEATURES
GALAXY ELECTRICAL
BYT52A(Z)---BYT52M(Z)
VOLT AGE RANGE: 50 --- 1000 V
CURRENT: 1.4 A
FAST RECOVERY RECT IFIERS
Low cos t
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon, Alcohol,Is opropanol and
s im ilar s olvents
DO - 15
MECHANICAL DATA
Cas e:JEDEC DO--15,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces ,0.39 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%.
BYT
52A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T
A
=75
BYT
52B
100
70
10
BYT
52D
200
140
200
BYT
52G
400
280
400
1.4
BYT
52J
600
420
600
BYT
52K
800
560
800
BYT
52M
1000
700
1000
UNITS
V
V
V
A
V
RR M
V
R MS
V
DC
I
F(AV)
50
35
50
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
V
F
I
R
t
rr
C
J
R
qJA
T
J
T
STG
50.0
A
Maximum instantaneous f orw ard voltage
(
@ 1.0A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
1.3
5.0
100.0
200
18
45
-55 ---- + 150
-55 ---- + 150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
N OTE:1. Meas ured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V D C .
3. Therm al resistance f rom junction to am bient.
www.galaxycn.com
Document Number 0261043
BL
GALAXY ELECTRICAL
1.

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描述 0.85 A, 600 V, SILICON, SIGNAL DIODE 0.85 A, 600 V, SILICON, SIGNAL DIODE 0.85 A, 600 V, SILICON, SIGNAL DIODE 0.85 A, 600 V, SILICON, SIGNAL DIODE 0.85 A, 600 V, SILICON, SIGNAL DIODE 0.85 A, 600 V, SILICON, SIGNAL DIODE 0.85 A, 800 V, SILICON, SIGNAL DIODE 0.85 A, 600 V, SILICON, SIGNAL DIODE 0.85 A, 1000 V, SILICON, SIGNAL DIODE 0.85 A, 600 V, SILICON, SIGNAL DIODE

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