PNP resistor-equipped transistors; R1 = 1 kW, R2 = 1 kW
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | NXP(恩智浦) |
| 零件包装代码 | SOT-23 |
| 包装说明 | PLASTIC PACKAGE-3 |
| 针数 | 3 |
| Reach Compliance Code | compli |
| ECCN代码 | EAR99 |
| 其他特性 | BUILT IN BIAS RESISTOR RATIO IS 1 |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 30 |
| JEDEC-95代码 | TO-236AB |
| JESD-30 代码 | R-PDSO-G3 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | PNP |
| 最大功率耗散 (Abs) | 0.25 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Tin (Sn) |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 30 |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| PDTA113ET | PDTA113EE | PDTA113EK | PDTA113EM | PDTA113EU | PDTA113ES | PDTA113E | |
|---|---|---|---|---|---|---|---|
| 描述 | PNP resistor-equipped transistors; R1 = 1 kW, R2 = 1 kW | PNP resistor-equipped transistors; R1 = 1 kW, R2 = 1 kW | PNP resistor-equipped transistors; R1 = 1 kW, R2 = 1 kW | PNP resistor-equipped transistors; R1 = 1 kW, R2 = 1 kW | PNP resistor-equipped transistors; R1 = 1 kW, R2 = 1 kW | PNP resistor-equipped transistors; R1 = 1 kW, R2 = 1 kW | PNP resistor-equipped transistors; R1 = 1 kW, R2 = 1 kW |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | - |
| 厂商名称 | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | - | - |
| 零件包装代码 | SOT-23 | SC-75 | SOT-23 | SC-101 | SC-70 | TO-92 | - |
| 包装说明 | PLASTIC PACKAGE-3 | PLASTIC, SC-75, 3 PIN | SMALL OUTLINE, R-PDSO-G3 | 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN | PLASTIC, SC-70, 3 PIN | CYLINDRICAL, O-PBCY-T3 | - |
| 针数 | 3 | 3 | 3 | 3 | 3 | 3 | - |
| Reach Compliance Code | compli | compli | unknow | compli | compli | unknow | - |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | - |
| 其他特性 | BUILT IN BIAS RESISTOR RATIO IS 1 | BUILT IN BIAS RESISTOR RATIO IS 1 | BUILT IN BIAS RESISTOR RATIO IS 1 | BUILT IN BIAS RESISTOR RATIO IS 1 | BUILT IN BIAS RESISTOR RATIO IS 1 | BUILT IN BIAS RESISTOR RATIO IS 1 | - |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | - |
| 集电极-发射极最大电压 | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V | - |
| 配置 | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | - |
| 最小直流电流增益 (hFE) | 30 | 30 | 30 | 30 | 30 | 30 | - |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PBCC-N3 | R-PDSO-G3 | O-PBCY-T3 | - |
| JESD-609代码 | e3 | e3 | e3 | e3 | e3 | e3 | - |
| 湿度敏感等级 | 1 | 1 | - | 1 | 1 | - | - |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | - |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | - |
| 最高工作温度 | 150 °C | 150 °C | - | 150 °C | 150 °C | - | - |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | ROUND | - |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | CHIP CARRIER | SMALL OUTLINE | CYLINDRICAL | - |
| 峰值回流温度（摄氏度） | 260 | 260 | - | 260 | 260 | - | - |
| 极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP | - |
| 最大功率耗散 (Abs) | 0.25 W | 0.15 W | 0.25 W | 0.25 W | 0.2 W | 0.5 W | - |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - |
| 表面贴装 | YES | YES | YES | YES | YES | NO | - |
| 端子面层 | Tin (Sn) | Tin (Sn) | TIN | Tin (Sn) | Tin (Sn) | TIN | - |
| 端子形式 | GULL WING | GULL WING | GULL WING | NO LEAD | GULL WING | THROUGH-HOLE | - |
| 端子位置 | DUAL | DUAL | DUAL | BOTTOM | DUAL | BOTTOM | - |
| 处于峰值回流温度下的最长时间 | 30 | 30 | - | 30 | 30 | - | - |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | - |
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