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212A625-144: 产品描述Standard SRAM, 512KX8, 40ns, CMOS, CDFP40, 1.130 X 1.065 INCH, CERAMIC, FP-40; 产品类别存储存储; 文件大小286KB，共12页; 制造商BAE Systems

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212A625-144概述

Standard SRAM, 512KX8, 40ns, CMOS, CDFP40, 1.130 X 1.065 INCH, CERAMIC, FP-40

212A625-144规格参数

参数名称	属性值
厂商名称	BAE Systems
零件包装代码	DFP
包装说明	DFP,
针数	40
Reach Compliance Code	unknow
ECCN代码	3A001.A.2.C
最长访问时间	40 ns
JESD-30 代码	R-CDFP-F40
长度	28.702 mm
内存密度	4194304 bi
内存集成电路类型	STANDARD SRAM
内存宽度	8
功能数量	1
端子数量	40
字数	524288 words
字数代码	512000
工作模式	ASYNCHRONOUS
最高工作温度	125 °C
最低工作温度	-55 °C
组织	512KX8
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	DFP
封装形状	RECTANGULAR
封装形式	FLATPACK
并行/串行	PARALLEL
认证状态	Not Qualified
筛选级别	MIL-PRF-38535
座面最大高度	3.1496 mm
最大供电电压 (Vsup)	3.46 V
最小供电电压 (Vsup)	3.14 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	MILITARY
端子形式	FLAT
端子节距	0.635 mm
端子位置	DUAL
宽度	27.051 mm

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512K x 8

Radiation Hardened

Static RAM – 3.3 V

Features

212A625

Product Description

Other

• Read/Write Cycle Times

≤

30 ns and 40 ns (-55°C to

125°C)

• Read/Write Cycle Time 55ns (limited temperature

range)

• SMD Number TBD

• Asynchronous Operation

• CMOS Compatible I/O

• Single 3.3 V ±5% Power Supply

• Low Operating Power

• Packaging Options

• 40-Lead Flat Pack (1.130” x 1.065)

Radiation

• Fabricated with RHCMOS5XL 0.35 µm Process for

Strategic rad hard or R25 0.25 µm Commercial

process for rad hard

• Radiation Hardened Total Dose hardness through

1x10

rad(Si)

• Commercial Space Total Dose hardness of 100Krads

• Neutron Hardness through 1x10

N/cm

• Dynamic and Static Transient Upset Hardness

through 1x10

rad(Si)/s

• Soft Error Rate of < 1x10

-11

Upsets/Bit-Day

• Dose Rate Survivability through 1x10

rad(Si)/s

• Latchup Free

General Description

The 512K x 8 radiation hardened static RAM is

composed of one 512K x 8 SRAM memory die

assembled in a single, ceramic substrate.

Each die is a high performance 524,288 word x

8-bit static random access memory with

industry-standard functionality. It is fabricated

with BAE SYSTEMS’ radiation hardened

technology and is designed for use in systems

operating in strategic radiation environments; It

is fabricated using commercial 0.25 µm

technology for commercial space applications.

The RAM operates over the full military

temperature range and requires a single 3.3 V

±5% power supply. The RAM is available with

CMOS compatible I/O. Power consumption is

typically less than 25mW/MHz in operation, and

less than 15 mW in the low power disabled

mode. The RAM read operation is fully

asynchronous, with an associated typical

access time of 30 nanoseconds.

BAE SYSTEMS’ enhanced bulk CMOS

technology is radiation hardened through the

use of advanced and proprietary design, layout,

and process hardening techniques.

BAE SYSTEMS • 9300 Wellington Road • Manassas, Virginia 20110-4122

212A625-144相似产品对比

	212A625-144	212A625-145	212A625-155	212A625-159	212A625-149	212A625-134	212A625-154	212A625-135	212A625-139
描述	Standard SRAM, 512KX8, 40ns, CMOS, CDFP40, 1.130 X 1.065 INCH, CERAMIC, FP-40	Standard SRAM, 512KX8, 40ns, CMOS, CDFP40, 1.130 X 1.065 INCH, CERAMIC, FP-40	Standard SRAM, 512KX8, 55ns, CMOS, CDFP40, 1.130 X 1.065 INCH, CERAMIC, FP-40	Standard SRAM, 512KX8, 55ns, CMOS, CDFP40, 1.130 X 1.065 INCH, CERAMIC, FP-40	Standard SRAM, 512KX8, 40ns, CMOS, CDFP40, 1.130 X 1.065 INCH, CERAMIC, FP-40	Standard SRAM, 512KX8, 30ns, CMOS, CDFP40, 1.130 X 1.065 INCH, CERAMIC, FP-40	Standard SRAM, 512KX8, 55ns, CMOS, CDFP40, 1.130 X 1.065 INCH, CERAMIC, FP-40	Standard SRAM, 512KX8, 30ns, CMOS, CDFP40, 1.130 X 1.065 INCH, CERAMIC, FP-40	Standard SRAM, 512KX8, 30ns, CMOS, CDFP40, 1.130 X 1.065 INCH, CERAMIC, FP-40
零件包装代码	DFP	DFP	DFP	DFP	DFP	DFP	DFP	DFP	DFP
包装说明	DFP,	DFP,	DFP,	DFP,	DFP,	DFP,	DFP,	DFP,	DFP,
针数	40	40	40	40	40	40	40	40	40
Reach Compliance Code	unknow	unknown	unknown	unknown	unknown	unknown	unknown	unknow	unknow
ECCN代码	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
最长访问时间	40 ns	40 ns	55 ns	55 ns	40 ns	30 ns	55 ns	30 ns	30 ns
JESD-30 代码	R-CDFP-F40	R-CDFP-F40	R-CDFP-F40	R-CDFP-F40	R-CDFP-F40	R-CDFP-F40	R-CDFP-F40	R-CDFP-F40	R-CDFP-F40
长度	28.702 mm	28.702 mm	28.702 mm	28.702 mm	28.702 mm	28.702 mm	28.702 mm	28.702 mm	28.702 mm
内存密度	4194304 bi	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bi	4194304 bi
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1	1
端子数量	40	40	40	40	40	40	40	40	40
字数	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
字数代码	512000	512000	512000	512000	512000	512000	512000	512000	512000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
组织	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装代码	DFP	DFP	DFP	DFP	DFP	DFP	DFP	DFP	DFP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
筛选级别	MIL-PRF-38535	MIL-PRF-38535	MIL-PRF-38535	MIL-STD-883 Class S	MIL-STD-883 Class S	MIL-PRF-38535	MIL-PRF-38535	MIL-PRF-38535	MIL-STD-883 Class S
座面最大高度	3.1496 mm	3.1496 mm	3.1496 mm	3.1496 mm	3.1496 mm	3.1496 mm	3.1496 mm	3.1496 mm	3.1496 mm
最大供电电压 (Vsup)	3.46 V	3.46 V	3.46 V	3.46 V	3.46 V	3.46 V	3.46 V	3.46 V	3.46 V
最小供电电压 (Vsup)	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子节距	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
宽度	27.051 mm	27.051 mm	27.051 mm	27.051 mm	27.051 mm	27.051 mm	27.051 mm	27.051 mm	27.051 mm
Base Number Matches	-	1	1	1	1	1	1	-	-

212A625-144

212A625-144概述

212A625-144规格参数

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