Page Mode DRAM, 64KX4, 150ns, CMOS, CQCC18, CERAMIC, LCC-18
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Micron Technology |
| 包装说明 | CERAMIC, LCC-18 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 访问模式 | PAGE |
| 最长访问时间 | 150 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I/O 类型 | COMMON |
| JESD-30 代码 | X-CQCC-N18 |
| JESD-609代码 | e0 |
| 内存密度 | 262144 bit |
| 内存集成电路类型 | PAGE MODE DRAM |
| 内存宽度 | 4 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 18 |
| 字数 | 65536 words |
| 字数代码 | 64000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 64KX4 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QCCN |
| 封装等效代码 | LCC18,.3X.5 |
| 封装形状 | UNSPECIFIED |
| 封装形式 | CHIP CARRIER |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 256 |
| 筛选级别 | MIL-STD-883 Class B |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| MT4067EC-15XT | MT4067EJ-8 | MT4067EC-12XT | MT4067EC-12/883C | MT4067EC-10XT | MT4067EC-15/883C | MT4067EC-10/883C | MT4067C-20/883C | MT4067C-20 | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | Page Mode DRAM, 64KX4, 150ns, CMOS, CQCC18, CERAMIC, LCC-18 | Page Mode DRAM, 64KX4, 80ns, MOS, PQCC18 | Page Mode DRAM, 64KX4, 120ns, CMOS, CQCC18, CERAMIC, LCC-18 | Page Mode DRAM, 64KX4, 120ns, CMOS, CQCC18, CERAMIC, LCC-18 | Page Mode DRAM, 64KX4, 100ns, CMOS, CQCC18, CERAMIC, LCC-18 | Page Mode DRAM, 64KX4, 150ns, CMOS, CQCC18, CERAMIC, LCC-18 | Page Mode DRAM, 64KX4, 100ns, CMOS, CQCC18, CERAMIC, LCC-18 | Page Mode DRAM, 64KX4, 200ns, CMOS, CDIP18, 0.300 INCH, CERAMIC, DIP-18 | Page Mode DRAM, 64KX4, 200ns, CMOS, CDIP18, 0.300 INCH, CERAMIC, DIP-18 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | _compli | not_compliant |
| 最长访问时间 | 150 ns | 80 ns | 120 ns | 120 ns | 100 ns | 150 ns | 100 ns | 200 ns | 200 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | X-CQCC-N18 | R-PQCC-J18 | X-CQCC-N18 | X-CQCC-N18 | X-CQCC-N18 | X-CQCC-N18 | X-CQCC-N18 | R-CDIP-T18 | R-CDIP-T18 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bi | 262144 bit |
| 内存集成电路类型 | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM |
| 内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| 端子数量 | 18 | 18 | 18 | 18 | 18 | 18 | 18 | 18 | 18 |
| 字数 | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| 字数代码 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 |
| 最高工作温度 | 125 °C | 70 °C | 125 °C | 110 °C | 125 °C | 110 °C | 110 °C | 110 °C | 70 °C |
| 最低工作温度 | -55 °C | - | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | - |
| 组织 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QCCN | QCCJ | QCCN | QCCN | QCCN | QCCN | QCCN | DIP | DIP |
| 封装等效代码 | LCC18,.3X.5 | LDCC18,.33X.53 | LCC18,.3X.5 | LCC18,.3X.5 | LCC18,.3X.5 | LCC18,.3X.5 | LCC18,.3X.5 | DIP18,.3 | DIP18,.3 |
| 封装形状 | UNSPECIFIED | RECTANGULAR | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | IN-LINE | IN-LINE |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 256 | 256 | 256 | 256 | 256 | 256 | 256 | 256 | 256 |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES | NO | NO |
| 技术 | CMOS | MOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | COMMERCIAL | MILITARY | OTHER | MILITARY | OTHER | OTHER | OTHER | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD | J BEND | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm |
| 端子位置 | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | DUAL | DUAL |
| 厂商名称 | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | - |
| 包装说明 | CERAMIC, LCC-18 | - | CERAMIC, LCC-18 | CERAMIC, LCC-18 | CERAMIC, LCC-18 | CERAMIC, LCC-18 | CERAMIC, LCC-18 | 0.300 INCH, CERAMIC, DIP-18 | 0.300 INCH, CERAMIC, DIP-18 |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | PAGE | - | PAGE | PAGE | PAGE | PAGE | PAGE | PAGE | PAGE |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | - | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| 功能数量 | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 工作模式 | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 筛选级别 | MIL-STD-883 Class B | - | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B |
| 最大供电电压 (Vsup) | 5.5 V | - | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | - | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
