RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN
| 参数名称 | 属性值 |
| 厂商名称 | Motorola ( NXP ) |
| 包装说明 | DISK BUTTON, O-CRDB-F2 |
| Reach Compliance Code | unknown |
| 其他特性 | DIFFUSED BALLAST RESISTORS |
| 外壳连接 | BASE |
| 最大集电极电流 (IC) | 0.5 A |
| 基于收集器的最大容量 | 5 pF |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 10 |
| 最高频带 | S BAND |
| JESD-30 代码 | O-CRDB-F2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 最高工作温度 | 200 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | ROUND |
| 封装形式 | DISK BUTTON |
| 极性/信道类型 | NPN |
| 最小功率增益 (Gp) | 8 dB |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | FLAT |
| 端子位置 | RADIAL |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| MRW2003F | MRW2005F | MRW2015F | MRW2020 | MRW2020F | MRW2010F | |
|---|---|---|---|---|---|---|
| 描述 | RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN | RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN | RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN | S BAND, Si, NPN, RF POWER TRANSISTOR | S BAND, Si, NPN, RF POWER TRANSISTOR | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 厂商名称 | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
| 包装说明 | DISK BUTTON, O-CRDB-F2 | DISK BUTTON, O-CRDB-F2 | FLATPACK, R-CDFP-F2 | FLANGE MOUNT, R-CDFM-F2 | FLATPACK, R-CDFP-F2 | DISK BUTTON, O-CRDB-F2 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow |
| 其他特性 | DIFFUSED BALLAST RESISTORS | DIFFUSED BALLAST RESISTORS | DIFFUSED BALLAST RESISTORS | DIFFUSED BALLAST RESISTORS | DIFFUSED BALLAST RESISTORS | DIFFUSED BALLAST RESISTORS |
| 外壳连接 | BASE | BASE | BASE | BASE | BASE | BASE |
| 最大集电极电流 (IC) | 0.5 A | 1 A | 3 A | 4 A | 4 A | 2 A |
| 基于收集器的最大容量 | 5 pF | 7 pF | 21 pF | 24 pF | 24 pF | 12 pF |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 10 | 10 | 10 | 10 | 10 | 10 |
| 最高频带 | S BAND | S BAND | S BAND | S BAND | S BAND | S BAND |
| JESD-30 代码 | O-CRDB-F2 | O-CRDB-F2 | R-CDFP-F2 | R-CDFM-F2 | R-CDFP-F2 | O-CRDB-F2 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | 2 | 2 | 2 | 2 |
| 最高工作温度 | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | ROUND | ROUND | RECTANGULAR | RECTANGULAR | RECTANGULAR | ROUND |
| 封装形式 | DISK BUTTON | DISK BUTTON | FLATPACK | FLANGE MOUNT | FLATPACK | DISK BUTTON |
| 极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN |
| 最小功率增益 (Gp) | 8 dB | 8 dB | 6 dB | 5.2 dB | 5.2 dB | 7 dB |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT |
| 端子位置 | RADIAL | RADIAL | DUAL | DUAL | DUAL | RADIAL |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
