Bi-Directional FIFO, 2KX9, 35ns, Asynchronous, CMOS, PDIP32
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 最长访问时间 | 35 ns |
| 最大时钟频率 (fCLK) | 22.2 MHz |
| JESD-30 代码 | R-PDIP-T32 |
| JESD-609代码 | e0 |
| 内存密度 | 18432 bit |
| 内存集成电路类型 | BI-DIRECTIONAL FIFO |
| 内存宽度 | 9 |
| 端子数量 | 32 |
| 字数 | 2048 words |
| 字数代码 | 2000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 2KX9 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装等效代码 | DIP32,.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度(摄氏度) | 260 |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 最大待机电流 | 0.008 A |
| 最大压摆率 | 0.12 mA |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 6 |
| IDT7273L35P | IDT7272L35LB | IDT7272L50P | IDT7273L35LB | 7273L35LB | 7273L35P | 7273L35J | 7272L50P | 7272L20J | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | Bi-Directional FIFO, 2KX9, 35ns, Asynchronous, CMOS, PDIP32 | Bi-Directional FIFO, 1KX9, 35ns, Asynchronous, CMOS, CQCC32 | Bi-Directional FIFO, 1KX9, 50ns, Asynchronous, CMOS, PDIP32 | Bi-Directional FIFO, 2KX9, 35ns, Asynchronous, CMOS, CQCC32 | Bi-Directional FIFO, 2KX9, 35ns, Asynchronous, CMOS, CQCC32 | Bi-Directional FIFO, 2KX9, 35ns, Asynchronous, CMOS, PDIP32 | Bi-Directional FIFO, 2KX9, 35ns, Asynchronous, CMOS, PQCC32 | Bi-Directional FIFO, 1KX9, 50ns, Asynchronous, CMOS, PDIP32 | Bi-Directional FIFO, 1KX9, 20ns, Asynchronous, CMOS, PQCC32 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 35 ns | 35 ns | 50 ns | 35 ns | 35 ns | 35 ns | 35 ns | 50 ns | 20 ns |
| 最大时钟频率 (fCLK) | 22.2 MHz | 22.2 MHz | 15.4 MHz | 22.2 MHz | 22.2 MHz | 22.2 MHz | 22.2 MHz | 15.4 MHz | 33.3 MHz |
| JESD-30 代码 | R-PDIP-T32 | R-XQCC-N32 | R-PDIP-T32 | R-XQCC-N32 | R-XQCC-N32 | R-PDIP-T32 | R-PQCC-J32 | R-PDIP-T32 | R-PQCC-J32 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 18432 bit | 9216 bit | 9216 bit | 18432 bit | 18432 bit | 18432 bit | 18432 bit | 9216 bit | 9216 bit |
| 内存集成电路类型 | BI-DIRECTIONAL FIFO | BI-DIRECTIONAL FIFO | BI-DIRECTIONAL FIFO | BI-DIRECTIONAL FIFO | BI-DIRECTIONAL FIFO | BI-DIRECTIONAL FIFO | BI-DIRECTIONAL FIFO | BI-DIRECTIONAL FIFO | BI-DIRECTIONAL FIFO |
| 内存宽度 | 9 | 9 | 9 | 9 | 9 | 9 | 9 | 9 | 9 |
| 端子数量 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
| 字数 | 2048 words | 1024 words | 1024 words | 2048 words | 2048 words | 2048 words | 2048 words | 1024 words | 1024 words |
| 字数代码 | 2000 | 1000 | 1000 | 2000 | 2000 | 2000 | 2000 | 1000 | 1000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 125 °C | 70 °C | 125 °C | 125 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 2KX9 | 1KX9 | 1KX9 | 2KX9 | 2KX9 | 2KX9 | 2KX9 | 1KX9 | 1KX9 |
| 封装主体材料 | PLASTIC/EPOXY | CERAMIC | PLASTIC/EPOXY | CERAMIC | CERAMIC | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | QCCN | DIP | QCCN | QCCN | DIP | QCCJ | DIP | QCCJ |
| 封装等效代码 | DIP32,.6 | LCC32,.45X.55 | DIP32,.6 | LCC32,.45X.55 | LCC32,.45X.55 | DIP32,.6 | LDCC32,.5X.6 | DIP32,.6 | LDCC32,.5X.6 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | CHIP CARRIER | IN-LINE | CHIP CARRIER | CHIP CARRIER | IN-LINE | CHIP CARRIER | IN-LINE | CHIP CARRIER |
| 峰值回流温度(摄氏度) | 260 | 260 | 260 | 260 | 260 | 260 | 225 | 260 | 225 |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.008 A | 0.012 A | 0.008 A | 0.012 A | 0.012 A | 0.008 A | 0.008 A | 0.008 A | 0.008 A |
| 最大压摆率 | 0.12 mA | 0.15 mA | 0.12 mA | 0.15 mA | 0.15 mA | 0.12 mA | 0.12 mA | 0.12 mA | 0.12 mA |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | YES | NO | YES | YES | NO | YES | NO | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | MILITARY | COMMERCIAL | MILITARY | MILITARY | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn85Pb15) |
| 端子形式 | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | NO LEAD | NO LEAD | THROUGH-HOLE | J BEND | THROUGH-HOLE | J BEND |
| 端子节距 | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm |
| 端子位置 | DUAL | QUAD | DUAL | QUAD | QUAD | DUAL | QUAD | DUAL | QUAD |
| 处于峰值回流温度下的最长时间 | 6 | 6 | 6 | 6 | 6 | 6 | 30 | 6 | 30 |
| 厂商名称 | IDT (Integrated Device Technology) | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | - |
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