27A, 60V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Rochester Electronics |
| 包装说明 | CASE 418B-04, D2PAK-3 |
| 针数 | 3 |
| 制造商包装代码 | CASE 418B-04 |
| Reach Compliance Code | unknown |
| 雪崩能效等级（Eas） | 101 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V |
| 最大漏极电流 (ID) | 27 A |
| 最大漏源导通电阻 | 0.042 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSSO-G2 |
| JESD-609代码 | e0 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 235 |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 80 A |
| 认证状态 | COMMERCIAL |
| 表面贴装 | YES |
| 端子面层 | TIN LEAD |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| NTB30N06 | NTP30N06 | NTB30N06G | NTB30N06T4 | |
|---|---|---|---|---|
| 描述 | 27A, 60V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 | 27A, 60V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN | 27A, 60V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418B-04, D2PAK-3 | 27A, 60V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 符合 | 不符合 |
| 厂商名称 | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics |
| 包装说明 | CASE 418B-04, D2PAK-3 | CASE 221A-09, 3 PIN | LEAD FREE, CASE 418B-04, D2PAK-3 | CASE 418B-04, D2PAK-3 |
| 针数 | 3 | 3 | 3 | 3 |
| 制造商包装代码 | CASE 418B-04 | CASE 221A-09 | CASE 418B-04 | CASE 418B-04 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| 雪崩能效等级（Eas） | 101 mJ | 101 mJ | 101 mJ | 101 mJ |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V | 60 V | 60 V | 60 V |
| 最大漏极电流 (ID) | 27 A | 27 A | 27 A | 27 A |
| 最大漏源导通电阻 | 0.042 Ω | 0.042 Ω | 0.042 Ω | 0.042 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSSO-G2 | R-PSFM-T3 | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609代码 | e0 | e0 | e3 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 3 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | FLANGE MOUNT | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 235 | NOT SPECIFIED | 260 | 235 |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 80 A | 80 A | 80 A | 80 A |
| 认证状态 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 表面贴装 | YES | NO | YES | YES |
| 端子面层 | TIN LEAD | TIN LEAD | MATTE TIN | TIN LEAD |
| 端子形式 | GULL WING | THROUGH-HOLE | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | 40 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 湿度敏感等级 | 1 | - | 1 | 1 |
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