27A, 60V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
厂商名称 | Rochester Electronics |
零件包装代码 | TO-220AB |
包装说明 | CASE 221A-09, 3 PIN |
针数 | 3 |
制造商包装代码 | CASE 221A-09 |
Reach Compliance Code | unknown |
雪崩能效等级(Eas) | 101 mJ |
外壳连接 | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 60 V |
最大漏极电流 (ID) | 27 A |
最大漏源导通电阻 | 0.042 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-220AB |
JESD-30 代码 | R-PSFM-T3 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 80 A |
认证状态 | COMMERCIAL |
表面贴装 | NO |
端子面层 | TIN LEAD |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
NTP30N06 | NTB30N06G | NTB30N06 | NTB30N06T4 | |
---|---|---|---|---|
描述 | 27A, 60V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN | 27A, 60V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418B-04, D2PAK-3 | 27A, 60V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 | 27A, 60V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 |
是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 |
是否Rohs认证 | 不符合 | 符合 | 不符合 | 不符合 |
厂商名称 | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics |
包装说明 | CASE 221A-09, 3 PIN | LEAD FREE, CASE 418B-04, D2PAK-3 | CASE 418B-04, D2PAK-3 | CASE 418B-04, D2PAK-3 |
针数 | 3 | 3 | 3 | 3 |
制造商包装代码 | CASE 221A-09 | CASE 418B-04 | CASE 418B-04 | CASE 418B-04 |
Reach Compliance Code | unknown | unknown | unknown | unknown |
雪崩能效等级(Eas) | 101 mJ | 101 mJ | 101 mJ | 101 mJ |
外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 60 V | 60 V | 60 V | 60 V |
最大漏极电流 (ID) | 27 A | 27 A | 27 A | 27 A |
最大漏源导通电阻 | 0.042 Ω | 0.042 Ω | 0.042 Ω | 0.042 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PSFM-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
JESD-609代码 | e0 | e3 | e0 | e0 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 2 | 2 | 2 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
峰值回流温度(摄氏度) | NOT SPECIFIED | 260 | 235 | 235 |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 80 A | 80 A | 80 A | 80 A |
认证状态 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
表面贴装 | NO | YES | YES | YES |
端子面层 | TIN LEAD | MATTE TIN | TIN LEAD | TIN LEAD |
端子形式 | THROUGH-HOLE | GULL WING | GULL WING | GULL WING |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | 40 | NOT SPECIFIED | NOT SPECIFIED |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
湿度敏感等级 | - | 1 | 1 | 1 |
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