100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
100 mA, 30 V, PNP, 硅, 小信号晶体管, TO-236AB
| 参数名称 | 属性值 |
| Brand Name | NXP Semiconduc |
| 是否Rohs认证 | 符合 |
| 厂商名称 | NXP(恩智浦) |
| 零件包装代码 | TO-236 |
| 包装说明 | PLASTIC PACKAGE-3 |
| 针数 | 3 |
| 制造商包装代码 | SOT23 |
| Reach Compliance Code | compli |
| ECCN代码 | EAR99 |
| 其他特性 | LOW NOISE |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 30 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 420 |
| JEDEC-95代码 | TO-236AB |
| JESD-30 代码 | R-PDSO-G3 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | PNP |
| 最大功率耗散 (Abs) | 0.3 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Tin (Sn) |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 40 |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 100 MHz |
| VCEsat-Max | 0.65 V |
| BC859C,215 | BC859C,235 | BC860B,215 | BC860B,235 | BC859B/AU,215 | BC859B,215 | BC859B/A2,215 | |
|---|---|---|---|---|---|---|---|
| 描述 | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 表面贴装 | YES | YES | YES | YES | Yes | YES | Yes |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | 双 | DUAL | 双 |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | 放大器 | AMPLIFIER | 放大器 |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | 硅 | SILICON | 硅 |
| Brand Name | NXP Semiconduc | NXP Semiconduc | NXP Semiconduc | NXP Semiconduc | - | NXP Semiconduc | - |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | - | 符合 | - |
| 厂商名称 | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | - | NXP(恩智浦) | - |
| 零件包装代码 | TO-236 | TO-236 | TO-236 | TO-236 | - | TO-236 | - |
| 包装说明 | PLASTIC PACKAGE-3 | SMALL OUTLINE, R-PDSO-G3 | PLASTIC PACKAGE-3 | SMALL OUTLINE, R-PDSO-G3 | - | PLASTIC PACKAGE-3 | - |
| 针数 | 3 | 3 | 3 | 3 | - | 3 | - |
| 制造商包装代码 | SOT23 | SOT23 | SOT23 | SOT23 | - | SOT23 | - |
| Reach Compliance Code | compli | compli | compli | compli | - | compli | - |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | - | EAR99 | - |
| 其他特性 | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | - | LOW NOISE | - |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | - | 0.1 A | - |
| 集电极-发射极最大电压 | 30 V | 30 V | 45 V | 45 V | - | 30 V | - |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | - | SINGLE | - |
| 最小直流电流增益 (hFE) | 420 | 420 | 220 | 220 | - | 220 | - |
| JEDEC-95代码 | TO-236AB | TO-236AB | TO-236AB | TO-236AB | - | TO-236AB | - |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | - | R-PDSO-G3 | - |
| JESD-609代码 | e3 | e3 | e3 | e3 | - | e3 | - |
| 湿度敏感等级 | 1 | 1 | 1 | 1 | - | 1 | - |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | - | 150 °C | - |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | - |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | - |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | - | SMALL OUTLINE | - |
| 峰值回流温度（摄氏度） | 260 | 260 | 260 | 260 | - | 260 | - |
| 极性/信道类型 | PNP | PNP | PNP | PNP | - | PNP | - |
| 最大功率耗散 (Abs) | 0.3 W | 0.25 W | 0.3 W | 0.25 W | - | 0.3 W | - |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | - |
| 端子面层 | Tin (Sn) | Tin (Sn) | Tin (Sn) | Tin (Sn) | - | Tin (Sn) | - |
| 处于峰值回流温度下的最长时间 | 40 | 40 | 40 | 40 | - | 40 | - |
| 标称过渡频率 (fT) | 100 MHz | 100 MHz | 100 MHz | 100 MHz | - | 100 MHz | - |
| VCEsat-Max | 0.65 V | 0.65 V | 0.65 V | 0.65 V | - | 0.65 V | - |
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