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1N5397G

产品描述1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15
产品类别半导体    分立半导体   
文件大小308KB,共2页
制造商SY
官网地址http://www.shunyegroup.com/
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1N5397G概述

1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15

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Reverse Voltage - 50 to 1000 Volts
DO-15
GLASS PASSIVATED SILICON RECTIFIER
FEATURES
1N5391G THRU 1N5399G
Forward Current - 1.5Amperes
1.0 (25.4)
MIN.
0.140 (3.6)
0.104(2.6)
DIA.
0.300(7.6)
0.230(5.8)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.70)
DIA.
MECHANICAL DATA
Case:
JEDEC DO-15 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.014
ounce, 0.40 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
5391G 5392G 5393G 5394G 5395G 5396G 5397G 5398G 5399G
1N
1N
1N
1N
1N
1N
1N
1N
1N
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.5A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
50
35
50
100 200 300 400 500
70 140 210 280 350
100 200 300 400 500
1.5
50.0
1.4
5.0
50.0
20.0
50.0
-65 to +175
600 800 1000 VOLTS
420 560 700 VOLTS
600 800 1000 VOLTS
Amps
Amps
Volts
µ
A
pF
C/W
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
www.shunyegroup.com

1N5397G相似产品对比

1N5397G 1N5392G 1N5391G 1N5394G 1N5395G 1N5393G 1N5398G 1N5399G 1N5396G
描述 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-15 RECTIFIER DIODE, DO-15 RECTIFIER DIODE, DO-15 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-15 RECTIFIER DIODE, DO-15 RECTIFIER DIODE, DO-15 RECTIFIER DIODE, DO-15

 
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