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NESG2101M16-T3-A

产品描述RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN
产品类别分立半导体    晶体管   
文件大小128KB,共13页
制造商NEC(日电)
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NESG2101M16-T3-A概述

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN

NESG2101M16-T3-A规格参数

参数名称属性值
厂商名称NEC(日电)
包装说明LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN
Reach Compliance Codeunknown
其他特性LOW NOISE
最大集电极电流 (IC)0.1 A
基于收集器的最大容量0.5 pF
集电极-发射极最大电压5 V
配置SINGLE
最高频带L BAND
JESD-30 代码R-PDSO-F6
元件数量1
端子数量6
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子形式FLAT
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON GERMANIUM
标称过渡频率 (fT)17000 MHz

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DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG2101M16
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (125 mW)
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
• The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-
gain amplification
P
O (1 dB)
= 21 dBm TYP. @ V
CE
= 3.6 V, I
C (set)
= 10 mA (RF OFF), f = 2 GHz
NF = 0.6 dB TYP., G
a
= 19.0 dB TYP. @ V
CE
= 2 V, I
C
= 7 mA, f = 1 GHz
• Maximum stable power gain: MSG = 17.0 dB TYP. @ V
CE
= 3 V, I
C
= 50 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: V
CEO
(absolute maximum ratings) = 5.0 V
• 6-pin lead-less minimold (M16, 1208 PKG)
<R>
ORDERING INFORMATION
Part Number
NESG2101M16
Order Number
NESG2101M16-A
Package
6-pin lead-less minimold
(M16, 1208 PKG)
NESG2101M16-T3
NESG2101M16-T3-A
(Pb-Free)
Quantity
50 pcs
(Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 6 (Emitter) face the
perforation side of the tape
Remark
To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
2
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
13.0
5.0
1.5
100
190
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10395EJ03V0DS (3rd edition)
Date Published September 2009 NS
Printed in Japan
The mark <R> shows major revised points.
2003, 2009
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

NESG2101M16-T3-A相似产品对比

NESG2101M16-T3-A NESG2101M16-A-YFB NESG2101M16-T3FB-A NESG2101M16-A NESG2101M16-T3YFB-A NESG2101M16-A-FB
描述 RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN
包装说明 LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN
Reach Compliance Code unknown unknown unknown unknown unknown unknown
其他特性 LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
基于收集器的最大容量 0.5 pF 0.5 pF 0.5 pF 0.5 pF 0.5 pF 0.5 pF
集电极-发射极最大电压 5 V 5 V 5 V 5 V 5 V 5 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最高频带 L BAND L BAND L BAND L BAND L BAND L BAND
JESD-30 代码 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6
元件数量 1 1 1 1 1 1
端子数量 6 6 6 6 6 6
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES
端子形式 FLAT FLAT FLAT FLAT FLAT FLAT
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON GERMANIUM SILICON GERMANIUM SILICON GERMANIUM SILICON GERMANIUM SILICON GERMANIUM SILICON GERMANIUM
标称过渡频率 (fT) 17000 MHz 17000 MHz 17000 MHz 17000 MHz 17000 MHz 17000 MHz
厂商名称 NEC(日电) - NEC(日电) NEC(日电) NEC(日电) NEC(日电)
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