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NESG2101M16-A: 产品描述RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN; 产品类别分立半导体晶体管; 文件大小128KB，共13页; 制造商NEC(日电)

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NESG2101M16-A概述

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN

NESG2101M16-A规格参数

参数名称	属性值
厂商名称	NEC(日电)
包装说明	LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN
Reach Compliance Code	unknown
其他特性	LOW NOISE
最大集电极电流 (IC)	0.1 A
基于收集器的最大容量	0.5 pF
集电极-发射极最大电压	5 V
配置	SINGLE
最高频带	L BAND
JESD-30 代码	R-PDSO-F6
元件数量	1
端子数量	6
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON GERMANIUM
标称过渡频率 (fT)	17000 MHz

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DATA SHEET

NPN SILICON GERMANIUM RF TRANSISTOR

NESG2101M16

NPN SiGe RF TRANSISTOR FOR

MEDIUM OUTPUT POWER AMPLIFICATION (125 mW)

6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

FEATURES

• The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-

gain amplification

O (1 dB)

= 21 dBm TYP. @ V

= 3.6 V, I

C (set)

= 10 mA (RF OFF), f = 2 GHz

NF = 0.6 dB TYP., G

= 19.0 dB TYP. @ V

= 2 V, I

= 7 mA, f = 1 GHz

• Maximum stable power gain: MSG = 17.0 dB TYP. @ V

= 3 V, I

= 50 mA, f = 2 GHz

• High breakdown voltage technology for SiGe Tr. adopted: V

CEO

(absolute maximum ratings) = 5.0 V

• 6-pin lead-less minimold (M16, 1208 PKG)

<R>

ORDERING INFORMATION

Part Number

NESG2101M16

Order Number

NESG2101M16-A

Package

6-pin lead-less minimold

(M16, 1208 PKG)

NESG2101M16-T3

NESG2101M16-T3-A

(Pb-Free)

Quantity

50 pcs

(Non reel)

10 kpcs/reel

Supplying Form

• 8 mm wide embossed taping

• Pin 1 (Collector), Pin 6 (Emitter) face the

perforation side of the tape

Remark

To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T

= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Symbol

CBO

CEO

EBO

tot

Note

Ratings

13.0

5.0

1.5

100

190

150

−65

to +150

Unit

°C

stg

Note

Mounted on 1.08 cm

1.0 mm (t) glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. PU10395EJ03V0DS (3rd edition)

Date Published September 2009 NS

Printed in Japan

The mark <R> shows major revised points.

2003, 2009

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

NESG2101M16-A相似产品对比

	NESG2101M16-A	NESG2101M16-A-YFB	NESG2101M16-T3FB-A	NESG2101M16-T3-A	NESG2101M16-T3YFB-A	NESG2101M16-A-FB
描述	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN
包装说明	LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN	LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN	LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN	LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN	LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN	LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
其他特性	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
基于收集器的最大容量	0.5 pF	0.5 pF	0.5 pF	0.5 pF	0.5 pF	0.5 pF
集电极-发射极最大电压	5 V	5 V	5 V	5 V	5 V	5 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最高频带	L BAND	L BAND	L BAND	L BAND	L BAND	L BAND
JESD-30 代码	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6
元件数量	1	1	1	1	1	1
端子数量	6	6	6	6	6	6
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON GERMANIUM	SILICON GERMANIUM	SILICON GERMANIUM	SILICON GERMANIUM	SILICON GERMANIUM	SILICON GERMANIUM
标称过渡频率 (fT)	17000 MHz	17000 MHz	17000 MHz	17000 MHz	17000 MHz	17000 MHz
厂商名称	NEC(日电)	-	NEC(日电)	NEC(日电)	NEC(日电)	NEC(日电)