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OM13317,598: 产品描述NVT2008PW/10PW DEMOBRD; 产品类别开发板/开发套件/开发工具; 文件大小443KB，共33页; 制造商NXP(恩智浦); 官网地址https://www.nxp.com; 标准

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OM13317,598概述

NVT2008PW/10PW DEMOBRD

OM13317,598规格参数

参数名称	属性值
所含物品	板

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NVT2008; NVT2010

Bidirectional voltage-level translator for open-drain and

push-pull applications

Rev. 3 — 27 January 2014

Product data sheet

1. General description

The NVT2008/NVT2010 are bidirectional voltage level translators operational from 1.0 V

to 3.6 V (V

ref(A)

) and 1.8 V to 5.5 V (V

ref(B)

), which allow bidirectional voltage translations

between 1.0 V and 5 V without the need for a direction pin in open-drain or push-pull

applications. Bit widths of 8-bit to 10-bit are offered for level translation application with

transmission speeds < 33 MHz for an open-drain system with a 50 pF capacitance and a

pull-up of 197

.

When the An or Bn port is LOW, the clamp is in the ON-state and a low resistance

connection exists between the An and Bn ports. The low ON-state resistance (R

) of the

switch allows connections to be made with minimal propagation delay. Assuming the

higher voltage is on the Bn port when the Bn port is HIGH, the voltage on the An port is

limited to the voltage set by VREFA. When the An port is HIGH, the Bn port is pulled to the

drain pull-up supply voltage (V

pu(D)

) by the pull-up resistors. This functionality allows a

seamless translation between higher and lower voltages selected by the user without the

need for directional control.

When EN is HIGH, the translator switch is on, and the An I/O are connected to the Bn I/O,

respectively, allowing bidirectional data flow between ports. When EN is LOW, the

translator switch is off, and a high-impedance state exists between ports. The EN input

circuit is designed to be supplied by V

ref(B)

. To ensure the high-impedance state during

power-up or power-down, EN must be LOW.

All channels have the same electrical characteristics and there is minimal deviation from

one output to another in voltage or propagation delay. This is a benefit over discrete

transistor voltage translation solutions, since the fabrication of the switch is symmetrical.

The translator provides excellent ESD protection to lower voltage devices, and at the

same time protects less ESD-resistant devices.

2. Features and benefits



Provides bidirectional voltage translation with no direction pin



Less than 1.5 ns maximum propagation delay



Allows voltage level translation between:



1.0 V V

ref(A)

and 1.8 V, 2.5 V, 3.3 V or 5 V V

ref(B)



1.2 V V

ref(A)

and 1.8 V, 2.5 V, 3.3 V or 5 V V

ref(B)



1.8 V V

ref(A)

and 3.3 V or 5 V V

ref(B)



2.5 V V

ref(A)

and 5 V V

ref(B)



3.3 V V

ref(A)

and 5 V V

ref(B)

OM13317,598相似产品对比

	OM13317,598	NVT2010BQ,118	NVT2010PW,118	NVT2008PW,118	NVT2008BQ,115	NVT2008_NVT2010
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