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NVT2008BQ,115

产品描述IC TRNSLTR BIDIR 20DHVQFN
产品类别模拟混合信号IC    驱动程序和接口   
文件大小443KB,共33页
制造商NXP(恩智浦)
官网地址https://www.nxp.com
标准
下载文档 详细参数 选型对比 全文预览

NVT2008BQ,115概述

IC TRNSLTR BIDIR 20DHVQFN

NVT2008BQ,115规格参数

参数名称属性值
Brand NameNXP Semiconductor
是否Rohs认证符合
零件包装代码QFN
针数20
制造商包装代码SOT764-1
Reach Compliance Codecompliant
ECCN代码EAR99
接口集成电路类型GTL TO TTL TRANSCEIVER
湿度敏感等级1
峰值回流温度(摄氏度)NOT SPECIFIED
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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NVT2008; NVT2010
Bidirectional voltage-level translator for open-drain and
push-pull applications
Rev. 3 — 27 January 2014
Product data sheet
1. General description
The NVT2008/NVT2010 are bidirectional voltage level translators operational from 1.0 V
to 3.6 V (V
ref(A)
) and 1.8 V to 5.5 V (V
ref(B)
), which allow bidirectional voltage translations
between 1.0 V and 5 V without the need for a direction pin in open-drain or push-pull
applications. Bit widths of 8-bit to 10-bit are offered for level translation application with
transmission speeds < 33 MHz for an open-drain system with a 50 pF capacitance and a
pull-up of 197
.
When the An or Bn port is LOW, the clamp is in the ON-state and a low resistance
connection exists between the An and Bn ports. The low ON-state resistance (R
on
) of the
switch allows connections to be made with minimal propagation delay. Assuming the
higher voltage is on the Bn port when the Bn port is HIGH, the voltage on the An port is
limited to the voltage set by VREFA. When the An port is HIGH, the Bn port is pulled to the
drain pull-up supply voltage (V
pu(D)
) by the pull-up resistors. This functionality allows a
seamless translation between higher and lower voltages selected by the user without the
need for directional control.
When EN is HIGH, the translator switch is on, and the An I/O are connected to the Bn I/O,
respectively, allowing bidirectional data flow between ports. When EN is LOW, the
translator switch is off, and a high-impedance state exists between ports. The EN input
circuit is designed to be supplied by V
ref(B)
. To ensure the high-impedance state during
power-up or power-down, EN must be LOW.
All channels have the same electrical characteristics and there is minimal deviation from
one output to another in voltage or propagation delay. This is a benefit over discrete
transistor voltage translation solutions, since the fabrication of the switch is symmetrical.
The translator provides excellent ESD protection to lower voltage devices, and at the
same time protects less ESD-resistant devices.
2. Features and benefits
Provides bidirectional voltage translation with no direction pin
Less than 1.5 ns maximum propagation delay
Allows voltage level translation between:
1.0 V V
ref(A)
and 1.8 V, 2.5 V, 3.3 V or 5 V V
ref(B)
1.2 V V
ref(A)
and 1.8 V, 2.5 V, 3.3 V or 5 V V
ref(B)
1.8 V V
ref(A)
and 3.3 V or 5 V V
ref(B)
2.5 V V
ref(A)
and 5 V V
ref(B)
3.3 V V
ref(A)
and 5 V V
ref(B)

NVT2008BQ,115相似产品对比

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