电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

NVT2010BQ,118

产品描述IC TRNSLTR BIDIR 24DHVQFN
产品类别模拟混合信号IC    驱动程序和接口   
文件大小443KB,共33页
制造商NXP(恩智浦)
官网地址https://www.nxp.com
标准
下载文档 详细参数 选型对比 全文预览

NVT2010BQ,118概述

IC TRNSLTR BIDIR 24DHVQFN

NVT2010BQ,118规格参数

参数名称属性值
Brand NameNXP Semiconductor
是否Rohs认证符合
厂商名称NXP(恩智浦)
零件包装代码QFN
包装说明DHVQFN-24
针数24
制造商包装代码SOT815-1
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性TOTEM OUTPUT CHARACTERISTIC ALSO POSSIBLE
最大延迟0.375 ns
输入特性STANDARD
接口集成电路类型GTL TO TTL TRANSCEIVER
JESD-30 代码R-PQCC-N24
长度5.5 mm
湿度敏感等级1
位数10
功能数量1
端子数量24
最高工作温度85 °C
最低工作温度-40 °C
输出特性OPEN-DRAIN
输出锁存器或寄存器NONE
封装主体材料PLASTIC/EPOXY
封装代码HVQCCN
封装等效代码LCC24/28,.14X.2,20
封装形状RECTANGULAR
封装形式CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度)NOT SPECIFIED
座面最大高度1 mm
最大供电电压5.4 V
最小供电电压
电源电压1-最大5.5 V
电源电压1-分钟
表面贴装YES
温度等级INDUSTRIAL
端子形式NO LEAD
端子节距0.5 mm
端子位置QUAD
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度3.5 mm

文档预览

下载PDF文档
NVT2008; NVT2010
Bidirectional voltage-level translator for open-drain and
push-pull applications
Rev. 3 — 27 January 2014
Product data sheet
1. General description
The NVT2008/NVT2010 are bidirectional voltage level translators operational from 1.0 V
to 3.6 V (V
ref(A)
) and 1.8 V to 5.5 V (V
ref(B)
), which allow bidirectional voltage translations
between 1.0 V and 5 V without the need for a direction pin in open-drain or push-pull
applications. Bit widths of 8-bit to 10-bit are offered for level translation application with
transmission speeds < 33 MHz for an open-drain system with a 50 pF capacitance and a
pull-up of 197
.
When the An or Bn port is LOW, the clamp is in the ON-state and a low resistance
connection exists between the An and Bn ports. The low ON-state resistance (R
on
) of the
switch allows connections to be made with minimal propagation delay. Assuming the
higher voltage is on the Bn port when the Bn port is HIGH, the voltage on the An port is
limited to the voltage set by VREFA. When the An port is HIGH, the Bn port is pulled to the
drain pull-up supply voltage (V
pu(D)
) by the pull-up resistors. This functionality allows a
seamless translation between higher and lower voltages selected by the user without the
need for directional control.
When EN is HIGH, the translator switch is on, and the An I/O are connected to the Bn I/O,
respectively, allowing bidirectional data flow between ports. When EN is LOW, the
translator switch is off, and a high-impedance state exists between ports. The EN input
circuit is designed to be supplied by V
ref(B)
. To ensure the high-impedance state during
power-up or power-down, EN must be LOW.
All channels have the same electrical characteristics and there is minimal deviation from
one output to another in voltage or propagation delay. This is a benefit over discrete
transistor voltage translation solutions, since the fabrication of the switch is symmetrical.
The translator provides excellent ESD protection to lower voltage devices, and at the
same time protects less ESD-resistant devices.
2. Features and benefits
Provides bidirectional voltage translation with no direction pin
Less than 1.5 ns maximum propagation delay
Allows voltage level translation between:
1.0 V V
ref(A)
and 1.8 V, 2.5 V, 3.3 V or 5 V V
ref(B)
1.2 V V
ref(A)
and 1.8 V, 2.5 V, 3.3 V or 5 V V
ref(B)
1.8 V V
ref(A)
and 3.3 V or 5 V V
ref(B)
2.5 V V
ref(A)
and 5 V V
ref(B)
3.3 V V
ref(A)
and 5 V V
ref(B)

NVT2010BQ,118相似产品对比

NVT2010BQ,118 NVT2010PW,118 OM13317,598 NVT2008PW,118 NVT2008BQ,115 NVT2008_NVT2010
描述 IC TRNSLTR BIDIR 24DHVQFN IC TRNSLTR BIDIRECTIONAL 24TSSOP NVT2008PW/10PW DEMOBRD IC TRNSLTR BIDIRECTIONAL 20TSSOP IC TRNSLTR BIDIR 20DHVQFN 适用于开漏和推挽应用的双向电压电平变换器

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 245  938  1929  2580  645  5  19  39  52  13 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved