MOSFET N-CHANNEL_30/40V
| 参数名称 | 属性值 |
| 厂商名称 | Infineon(英飞凌) |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| Is Samacsys | N |
| Base Number Matches | 1 |
| IPI80N04S2H4AKSA1 | IPB80N04S2H4ATMA1 | IPP80N04S2H4AKSA1 | |
|---|---|---|---|
| 描述 | MOSFET N-CHANNEL_30/40V | MOSFET N-CH 40V 80A TO263-3 | MOSFET N-CH 40V 80A TO220-3 |
| 厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
| Reach Compliance Code | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| Is Samacsys | N | N | N |
| Base Number Matches | 1 | 1 | 1 |
| 包装说明 | - | SMALL OUTLINE, R-PSSO-G2 | GREEN, PLASTIC, TO-220, 3 PIN |
| 其他特性 | - | AVALANCHE RATED | AVALANCHE RATED |
| 雪崩能效等级（Eas） | - | 660 mJ | 660 mJ |
| 配置 | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | - | 40 V | 40 V |
| 最大漏极电流 (ID) | - | 80 A | 80 A |
| 最大漏源导通电阻 | - | 0.0037 Ω | 0.004 Ω |
| FET 技术 | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | - | TO-263AB | TO-220AB |
| JESD-30 代码 | - | R-PSSO-G2 | R-PSFM-T3 |
| 元件数量 | - | 1 | 1 |
| 端子数量 | - | 2 | 3 |
| 工作模式 | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | - | SMALL OUTLINE | FLANGE MOUNT |
| 极性/信道类型 | - | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | - | 320 A | 320 A |
| 表面贴装 | - | YES | NO |
| 端子形式 | - | GULL WING | THROUGH-HOLE |
| 端子位置 | - | SINGLE | SINGLE |
| 晶体管元件材料 | - | SILICON | SILICON |
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