64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | ST(意法半导体) |
零件包装代码 | BGA |
包装说明 | 8 X 10 MM, 0.80 MM PITCH, TFBGA-88 |
针数 | 88 |
Reach Compliance Code | _compli |
Is Samacsys | N |
最长访问时间 | 70 ns |
其他特性 | SRAM IS ORGANIZED AS 512K X 16 |
JESD-30 代码 | R-PBGA-B88 |
JESD-609代码 | e0 |
长度 | 10 mm |
内存密度 | 67108864 bi |
内存集成电路类型 | MEMORY CIRCUIT |
内存宽度 | 16 |
混合内存类型 | FLASH+SRAM |
功能数量 | 1 |
端子数量 | 88 |
字数 | 4194304 words |
字数代码 | 4000000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
组织 | 4MX16 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | TFBGA |
封装等效代码 | BGA88,8X12,32 |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH |
峰值回流温度(摄氏度) | NOT SPECIFIED |
电源 | 1.8 V |
认证状态 | Not Qualified |
座面最大高度 | 1.2 mm |
最大待机电流 | 0.00001 A |
最大压摆率 | 0.045 mA |
最大供电电压 (Vsup) | 1.95 V |
最小供电电压 (Vsup) | 1.7 V |
标称供电电压 (Vsup) | 1.8 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | BALL |
端子节距 | 0.8 mm |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 8 mm |
Base Number Matches | 1 |
M36W0R6030T0ZAQT | M36W0R6030B0 | M36W0R6030B0ZAQT | M36W0R6030T0 | M36W0R6030T0ZAQF | M36W0R6030T0ZAQE | M36W0R6030T0ZAQ | M36W0R6030B0ZAQF | M36W0R6030B0ZAQ | M36W0R6030B0ZAQE | |
---|---|---|---|---|---|---|---|---|---|---|
描述 | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
是否Rohs认证 | 不符合 | - | 不符合 | - | 符合 | 符合 | 不符合 | 符合 | 不符合 | 符合 |
厂商名称 | ST(意法半导体) | - | ST(意法半导体) | - | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) |
零件包装代码 | BGA | - | BGA | - | BGA | BGA | BGA | BGA | BGA | BGA |
包装说明 | 8 X 10 MM, 0.80 MM PITCH, TFBGA-88 | - | 8 X 10 MM, 0.80 MM PITCH, TFBGA-88 | - | 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88 | 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88 | 8 X 10 MM, 0.80 MM PITCH, TFBGA-88 | 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88 | 8 X 10 MM, 0.80 MM PITCH, TFBGA-88 | 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88 |
针数 | 88 | - | 88 | - | 88 | 88 | 88 | 88 | 88 | 88 |
Reach Compliance Code | _compli | - | _compli | - | unknow | unknow | _compli | unknow | _compli | unknow |
Is Samacsys | N | - | N | - | N | N | - | N | N | N |
最长访问时间 | 70 ns | - | 70 ns | - | 70 ns | 70 ns | 70 ns | 70 ns | 70 ns | 70 ns |
其他特性 | SRAM IS ORGANIZED AS 512K X 16 | - | SRAM IS ORGANIZED AS 512K X 16 | - | SRAM IS ORGANIZED AS 512K X 16 | SRAM IS ORGANIZED AS 512K X 16 | SRAM IS ORGANIZED AS 512K X 16 | SRAM IS ORGANIZED AS 512K X 16 | SRAM IS ORGANIZED AS 512K X 16 | SRAM IS ORGANIZED AS 512K X 16 |
JESD-30 代码 | R-PBGA-B88 | - | R-PBGA-B88 | - | R-PBGA-B88 | R-PBGA-B88 | R-PBGA-B88 | R-PBGA-B88 | R-PBGA-B88 | R-PBGA-B88 |
JESD-609代码 | e0 | - | e0 | - | e1 | e1 | e0 | e1 | e0 | e1 |
长度 | 10 mm | - | 10 mm | - | 10 mm | 10 mm | 10 mm | 10 mm | 10 mm | 10 mm |
内存密度 | 67108864 bi | - | 67108864 bi | - | 67108864 bi | 67108864 bi | 67108864 bi | 67108864 bi | 67108864 bi | 67108864 bi |
内存集成电路类型 | MEMORY CIRCUIT | - | MEMORY CIRCUIT | - | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT |
内存宽度 | 16 | - | 16 | - | 16 | 16 | 16 | 16 | 16 | 16 |
混合内存类型 | FLASH+SRAM | - | FLASH+SRAM | - | FLASH+SRAM | FLASH+SRAM | FLASH+SRAM | FLASH+SRAM | FLASH+SRAM | FLASH+SRAM |
功能数量 | 1 | - | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 88 | - | 88 | - | 88 | 88 | 88 | 88 | 88 | 88 |
字数 | 4194304 words | - | 4194304 words | - | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words |
字数代码 | 4000000 | - | 4000000 | - | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 |
工作模式 | ASYNCHRONOUS | - | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 85 °C | - | 85 °C | - | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
最低工作温度 | -40 °C | - | -40 °C | - | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
组织 | 4MX16 | - | 4MX16 | - | 4MX16 | 4MX16 | 4MX16 | 4MX16 | 4MX16 | 4MX16 |
封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TFBGA | - | TFBGA | - | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA |
封装等效代码 | BGA88,8X12,32 | - | BGA88,8X12,32 | - | BGA88,8X12,32 | BGA88,8X12,32 | BGA88,8X12,32 | BGA88,8X12,32 | BGA88,8X12,32 | BGA88,8X12,32 |
封装形状 | RECTANGULAR | - | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | - | GRID ARRAY, THIN PROFILE, FINE PITCH | - | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
峰值回流温度(摄氏度) | NOT SPECIFIED | - | NOT SPECIFIED | - | 260 | 260 | NOT SPECIFIED | 260 | NOT SPECIFIED | 260 |
电源 | 1.8 V | - | 1.8 V | - | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
认证状态 | Not Qualified | - | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1.2 mm | - | 1.2 mm | - | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
最大待机电流 | 0.00001 A | - | 0.00001 A | - | 0.00001 A | 0.00001 A | 0.00001 A | 0.00001 A | 0.00001 A | 0.00001 A |
最大压摆率 | 0.045 mA | - | 0.045 mA | - | 0.045 mA | 0.045 mA | 0.045 mA | 0.045 mA | 0.045 mA | 0.045 mA |
最大供电电压 (Vsup) | 1.95 V | - | 1.95 V | - | 1.95 V | 1.95 V | 1.95 V | 1.95 V | 1.95 V | 1.95 V |
最小供电电压 (Vsup) | 1.7 V | - | 1.7 V | - | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
标称供电电压 (Vsup) | 1.8 V | - | 1.8 V | - | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
表面贴装 | YES | - | YES | - | YES | YES | YES | YES | YES | YES |
技术 | CMOS | - | CMOS | - | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | INDUSTRIAL | - | INDUSTRIAL | - | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
端子面层 | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | - | TIN SILVER COPPER | TIN SILVER COPPER | Tin/Lead (Sn/Pb) | TIN SILVER COPPER | Tin/Lead (Sn/Pb) | TIN SILVER COPPER |
端子形式 | BALL | - | BALL | - | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 0.8 mm | - | 0.8 mm | - | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
端子位置 | BOTTOM | - | BOTTOM | - | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
宽度 | 8 mm | - | 8 mm | - | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm |
Base Number Matches | 1 | - | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 |
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