M36W0R6030B0,M36W0R6030B0 pdf中文资料,M36W0R6030B0引脚图,M36W0R6030B0电路-Datasheet-电子工程世界

M36W0R6030B0: 产品描述64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package; 文件大小157KB，共26页; 制造商ST(意法半导体); 官网地址http://www.st.com/

下载文档选型对比全文预览

M36W0R6030B0概述

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

M36W0R6030B0相似产品对比

	M36W0R6030B0	M36W0R6030B0ZAQT	M36W0R6030T0	M36W0R6030T0ZAQT	M36W0R6030T0ZAQF	M36W0R6030T0ZAQE	M36W0R6030T0ZAQ	M36W0R6030B0ZAQF	M36W0R6030B0ZAQ	M36W0R6030B0ZAQE
描述	64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package	64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package	64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package	64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package	64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package	64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package	64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package	64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package	64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package	64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
是否Rohs认证	-	不符合	-	不符合	符合	符合	不符合	符合	不符合	符合
厂商名称	-	ST(意法半导体)	-	ST(意法半导体)	ST(意法半导体)	ST(意法半导体)	ST(意法半导体)	ST(意法半导体)	ST(意法半导体)	ST(意法半导体)
零件包装代码	-	BGA	-	BGA	BGA	BGA	BGA	BGA	BGA	BGA
包装说明	-	8 X 10 MM, 0.80 MM PITCH, TFBGA-88	-	8 X 10 MM, 0.80 MM PITCH, TFBGA-88	8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88	8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88	8 X 10 MM, 0.80 MM PITCH, TFBGA-88	8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88	8 X 10 MM, 0.80 MM PITCH, TFBGA-88	8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
针数	-	88	-	88	88	88	88	88	88	88
Reach Compliance Code	-	_compli	-	_compli	unknow	unknow	_compli	unknow	_compli	unknow
Is Samacsys	-	N	-	N	N	N	-	N	N	N
最长访问时间	-	70 ns	-	70 ns	70 ns	70 ns	70 ns	70 ns	70 ns	70 ns
其他特性	-	SRAM IS ORGANIZED AS 512K X 16	-	SRAM IS ORGANIZED AS 512K X 16	SRAM IS ORGANIZED AS 512K X 16	SRAM IS ORGANIZED AS 512K X 16	SRAM IS ORGANIZED AS 512K X 16	SRAM IS ORGANIZED AS 512K X 16	SRAM IS ORGANIZED AS 512K X 16	SRAM IS ORGANIZED AS 512K X 16
JESD-30 代码	-	R-PBGA-B88	-	R-PBGA-B88	R-PBGA-B88	R-PBGA-B88	R-PBGA-B88	R-PBGA-B88	R-PBGA-B88	R-PBGA-B88
JESD-609代码	-	e0	-	e0	e1	e1	e0	e1	e0	e1
长度	-	10 mm	-	10 mm	10 mm	10 mm	10 mm	10 mm	10 mm	10 mm
内存密度	-	67108864 bi	-	67108864 bi	67108864 bi	67108864 bi	67108864 bi	67108864 bi	67108864 bi	67108864 bi
内存集成电路类型	-	MEMORY CIRCUIT	-	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
内存宽度	-	16	-	16	16	16	16	16	16	16
混合内存类型	-	FLASH+SRAM	-	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM
功能数量	-	1	-	1	1	1	1	1	1	1
端子数量	-	88	-	88	88	88	88	88	88	88
字数	-	4194304 words	-	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
字数代码	-	4000000	-	4000000	4000000	4000000	4000000	4000000	4000000	4000000
工作模式	-	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	-	85 °C	-	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-	-40 °C	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	-	4MX16	-	4MX16	4MX16	4MX16	4MX16	4MX16	4MX16	4MX16
封装主体材料	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	-	TFBGA	-	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA
封装等效代码	-	BGA88,8X12,32	-	BGA88,8X12,32	BGA88,8X12,32	BGA88,8X12,32	BGA88,8X12,32	BGA88,8X12,32	BGA88,8X12,32	BGA88,8X12,32
封装形状	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	-	GRID ARRAY, THIN PROFILE, FINE PITCH	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）	-	NOT SPECIFIED	-	NOT SPECIFIED	260	260	NOT SPECIFIED	260	NOT SPECIFIED	260
电源	-	1.8 V	-	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
认证状态	-	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	-	1.2 mm	-	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
最大待机电流	-	0.00001 A	-	0.00001 A	0.00001 A	0.00001 A	0.00001 A	0.00001 A	0.00001 A	0.00001 A
最大压摆率	-	0.045 mA	-	0.045 mA	0.045 mA	0.045 mA	0.045 mA	0.045 mA	0.045 mA	0.045 mA
最大供电电压 (Vsup)	-	1.95 V	-	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V
最小供电电压 (Vsup)	-	1.7 V	-	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
标称供电电压 (Vsup)	-	1.8 V	-	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
表面贴装	-	YES	-	YES	YES	YES	YES	YES	YES	YES
技术	-	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	-	INDUSTRIAL	-	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子面层	-	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	TIN SILVER COPPER	TIN SILVER COPPER	Tin/Lead (Sn/Pb)	TIN SILVER COPPER	Tin/Lead (Sn/Pb)	TIN SILVER COPPER
端子形式	-	BALL	-	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	-	0.8 mm	-	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	-	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	-	8 mm	-	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm
Base Number Matches	-	1	-	1	1	1	1	1	1	1

M36W0R6030B0

M36W0R6030B0概述

M36W0R6030B0相似产品对比

推荐资源