IRFP131,IRFP131 pdf中文资料,IRFP131引脚图,IRFP131电路-Datasheet-电子工程世界

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IRFP131: 产品描述22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; 产品类别半导体分立半导体; 文件大小356KB，共6页; 制造商SAMSUNG(三星); 官网地址http://www.samsung.com/Products/Semiconductor/

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IRFP131概述

22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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IRFP131相似产品对比

	IRFP131	IRF530	IRF531	IRF532	IRF533	IRFP130	IRFP132	IRFP133
描述	22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	12 A, 100 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
零件包装代码	-	SFM	SFM	SFM	SFM	-	TO-3P	-
包装说明	-	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	-	FLANGE MOUNT, R-PSFM-T3	-
针数	-	3	3	3	3	-	2	-
Reach Compliance Code	-	unknown	unknow	unknow	unknow	-	unknow	-
ECCN代码	-	EAR99	EAR99	EAR99	EAR99	-	EAR99	-
雪崩能效等级（Eas）	-	69 mJ	69 mJ	69 mJ	69 mJ	-	69 mJ	-
配置	-	SINGLE	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	-
最小漏源击穿电压	-	100 V	80 V	100 V	80 V	-	100 V	-
最大漏极电流 (Abs) (ID)	-	14 A	14 A	12 A	12 A	-	12 A	-
最大漏极电流 (ID)	-	14 A	14 A	12 A	12 A	-	12 A	-
最大漏源导通电阻	-	0.16 Ω	0.16 Ω	0.23 Ω	0.23 Ω	-	0.23 Ω	-
FET 技术	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	-
JESD-30 代码	-	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	-	R-PSFM-T3	-
元件数量	-	1	1	1	1	-	1	-
端子数量	-	3	3	3	3	-	3	-
工作模式	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE	-
最高工作温度	-	150 °C	150 °C	150 °C	150 °C	-	150 °C	-
封装主体材料	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-
封装形状	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	-
封装形式	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT	-
极性/信道类型	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-	N-CHANNEL	-
功耗环境最大值	-	77 W	77 W	77 W	77 W	-	77 W	-
最大功率耗散 (Abs)	-	75 W	79 W	79 W	79 W	-	77 W	-
最大脉冲漏极电流 (IDM)	-	56 A	56 A	48 A	48 A	-	48 A	-
认证状态	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	-
表面贴装	-	NO	NO	NO	NO	-	NO	-
端子形式	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE	-
端子位置	-	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	-
晶体管应用	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	-
晶体管元件材料	-	SILICON	SILICON	SILICON	SILICON	-	SILICON	-
最大关闭时间（toff）	-	71 ns	71 ns	71 ns	71 ns	-	71 ns	-
最大开启时间（吨）	-	66 ns	66 ns	66 ns	66 ns	-	66 ns	-

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