Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
| IRFP133 | IRF530 | IRF531 | IRF532 | IRF533 | IRFP130 | IRFP132 | IRFP131 | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | 22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 12 A, 100 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 零件包装代码 | - | SFM | SFM | SFM | SFM | - | TO-3P | - |
| 包装说明 | - | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | - | FLANGE MOUNT, R-PSFM-T3 | - |
| 针数 | - | 3 | 3 | 3 | 3 | - | 2 | - |
| Reach Compliance Code | - | unknown | unknow | unknow | unknow | - | unknow | - |
| ECCN代码 | - | EAR99 | EAR99 | EAR99 | EAR99 | - | EAR99 | - |
| 雪崩能效等级（Eas） | - | 69 mJ | 69 mJ | 69 mJ | 69 mJ | - | 69 mJ | - |
| 配置 | - | SINGLE | SINGLE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | - |
| 最小漏源击穿电压 | - | 100 V | 80 V | 100 V | 80 V | - | 100 V | - |
| 最大漏极电流 (Abs) (ID) | - | 14 A | 14 A | 12 A | 12 A | - | 12 A | - |
| 最大漏极电流 (ID) | - | 14 A | 14 A | 12 A | 12 A | - | 12 A | - |
| 最大漏源导通电阻 | - | 0.16 Ω | 0.16 Ω | 0.23 Ω | 0.23 Ω | - | 0.23 Ω | - |
| FET 技术 | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | - |
| JESD-30 代码 | - | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | - | R-PSFM-T3 | - |
| 元件数量 | - | 1 | 1 | 1 | 1 | - | 1 | - |
| 端子数量 | - | 3 | 3 | 3 | 3 | - | 3 | - |
| 工作模式 | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE | - |
| 最高工作温度 | - | 150 °C | 150 °C | 150 °C | 150 °C | - | 150 °C | - |
| 封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | - |
| 封装形状 | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | - |
| 封装形式 | - | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | - | FLANGE MOUNT | - |
| 极性/信道类型 | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | N-CHANNEL | - |
| 功耗环境最大值 | - | 77 W | 77 W | 77 W | 77 W | - | 77 W | - |
| 最大功率耗散 (Abs) | - | 75 W | 79 W | 79 W | 79 W | - | 77 W | - |
| 最大脉冲漏极电流 (IDM) | - | 56 A | 56 A | 48 A | 48 A | - | 48 A | - |
| 认证状态 | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | - |
| 表面贴装 | - | NO | NO | NO | NO | - | NO | - |
| 端子形式 | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - | THROUGH-HOLE | - |
| 端子位置 | - | SINGLE | SINGLE | SINGLE | SINGLE | - | SINGLE | - |
| 晶体管应用 | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - | SWITCHING | - |
| 晶体管元件材料 | - | SILICON | SILICON | SILICON | SILICON | - | SILICON | - |
| 最大关闭时间（toff） | - | 71 ns | 71 ns | 71 ns | 71 ns | - | 71 ns | - |
| 最大开启时间（吨） | - | 66 ns | 66 ns | 66 ns | 66 ns | - | 66 ns | - |
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