Power Field-Effect Transistor
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Nexperia |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | not_compliant |
| Is Samacsys | N |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V |
| 最大漏极电流 (ID) | 68.9 A |
| 最大漏源导通电阻 | 0.0177 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-252 |
| JESD-30 代码 | R-PSSO-G2 |
| JESD-609代码 | e3 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 240 A |
| 表面贴装 | YES |
| 端子面层 | Matte Tin (Sn) |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| PHD63NQ03LT | PHD63NQ03LT,118 | PHB63NQ03LT | PHB63NQ03LT,118 | DBP-M998-00-2292-B | 934057022127 | 934057020118 | |
|---|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor | N-channel TrenchMOS logic level FET DPAK 3-Pin | Power Field-Effect Transistor | D2PAK 3-Pin | Array/Network Resistor, Bussed, Tantalum Nitride/nickel Chrome, 0.1W, 22900ohm, 100V, 0.1% +/-Tol, -300,300ppm/Cel, 8726, | Power Field-Effect Transistor | Power Field-Effect Transistor |
| Reach Compliance Code | not_compliant | not_compliant | compliant | compliant | compliant | compliant | compliant |
| 端子数量 | 2 | 2 | 2 | 2 | 16 | 3 | 2 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR PACKAGE | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | DIP | FLANGE MOUNT | SMALL OUTLINE |
| 是否Rohs认证 | 符合 | 符合 | - | - | 不符合 | 符合 | 符合 |
| 厂商名称 | Nexperia | Nexperia | Nexperia | Nexperia | - | Nexperia | Nexperia |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | PLASTIC, D2PAK-3 | PLASTIC, D2PAK-3 | - | FLANGE MOUNT, R-PSFM-T3 | PLASTIC, SC-63, DPAK-3 |
| Is Samacsys | N | N | N | N | - | - | - |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | - | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V | 30 V | 30 V | 30 V | - | 30 V | 30 V |
| 最大漏极电流 (ID) | 68.9 A | 68.9 A | 68.9 A | 68.9 A | - | 68.9 A | 68.9 A |
| 最大漏源导通电阻 | 0.0177 Ω | 0.0177 Ω | 0.0177 Ω | 0.0177 Ω | - | 0.0177 Ω | 0.0177 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-252 | TO-252 | - | - | - | TO-220AB | TO-252 |
| JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | - | R-PSFM-T3 | R-PSSO-G2 |
| 元件数量 | 1 | 1 | 1 | 1 | - | 1 | 1 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | - | - | - | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 240 A | 240 A | 240 A | 240 A | - | 240 A | 240 A |
| 表面贴装 | YES | YES | YES | YES | - | NO | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | - | THROUGH-HOLE | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | - | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | - | - | - | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | - | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 | - | - | - |
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