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TN2640N3-P002-G

产品描述MOSFET 400V 5Ohm
产品类别半导体    分立半导体   
文件大小793KB,共8页
制造商Microchip(微芯科技)
官网地址https://www.microchip.com
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TN2640N3-P002-G概述

MOSFET 400V 5Ohm

TN2640N3-P002-G规格参数

参数名称属性值
产品种类
Product Category
MOSFET
制造商
Manufacturer
Microchip(微芯科技)
RoHSDetails
技术
Technology
Si
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
TO-92-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage400 V
Id - Continuous Drain Current2 A
Rds On - Drain-Source Resistance5 Ohms
Vgs - Gate-Source Voltage20 V
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C
ConfigurationSingle
Channel ModeEnhancement
系列
Packaging
Cut Tape
系列
Packaging
Reel
Fall Time22 ns
Pd-功率耗散
Pd - Power Dissipation
1 W
产品
Product
MOSFET Small Signal
Rise Time15 ns
工厂包装数量
Factory Pack Quantity
2000
Transistor Type1 N-Channel
类型
Type
FET
Typical Turn-Off Delay Time20 ns
Typical Turn-On Delay Time4 ns
单位重量
Unit Weight
0.016000 oz

文档预览

下载PDF文档
Supertex inc.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
Low threshold (2.0V max.)
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
TN2640
General Description
Applications
This low threshold enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Part Number
TN2640K4-G
TN2640LG-G
TN2640N3-G
TN2640N3-G P002
TN2640N3-G P003
TN2640N3-G P005
TN2640N3-G P013
TN2640N3-G P015
For packaged products, -G indicates package is RoHS compliant (‘Green’).
TO-92 taping specifications and winding styles per EIA-468 Standard.
Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF57 for layout and dimensions.
Product Summary
Packing
2000/Reel
2500/Reel
1000/Bag
BV
DSS
/BV
DGS
400V
R
DS(ON)
(max)
Package Option
TO-252 (D-PAK)
8-Lead SOIC
3-Lead TO-92
I
D(ON)
(min)
V
GS(th)
(max)
5.0Ω
2.0A
2.0V
Pin Configuration
DRAIN
3-Lead TO-92
2000/Reel
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
GATE
SOURCE
N/C
N/C
TO-252 (D-PAK)
8-Lead SOIC
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Value
BV
DSS
BV
DGS
±20V
-55°C to +150°C
DRAIN
SOURCE
GATE
TO-92
Typical Thermal Resistance
Package
TO-252 (D-PAK)
8-Lead SOIC
TO-92
θ
ja
81
O
C/W
101
O
C/W
132
O
C/W
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Doc.# DSFP-TN2640
C071913
Supertex inc.
www.supertex.com

TN2640N3-P002-G相似产品对比

TN2640N3-P002-G TN2640N3-P013 TN2640LG-G TN2640K4-G TN2640N3-P003 TN2640N3-G-P002 TN2640N3 TN2640N3-G-P013 TN2640N3-G-P005 TN2640N3-G-P003
描述 MOSFET 400V 5Ohm MOSFET 400V 5Ohm Linear Voltage Regulators Positive adj Reg 3Terminal Thin Film Resistors - SMD 150ohms .1% 25ppm MOSFET 400V 5Ohm MOSFET N-CH Enhancmnt Mode MOSFET MOSFET 400V 5Ohm MOSFET N-CH Enhancmnt Mode MOSFET MOSFET N-CH Enhancmnt Mode MOSFET MOSFET N-CH Enhancmnt Mode MOSFET
产品种类
Product Category
MOSFET MOSFET - - MOSFET MOSFET MOSFET MOSFET MOSFET MOSFET
制造商
Manufacturer
Microchip(微芯科技) Microchip(微芯科技) - - Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技)
RoHS Details No - - No Details N Details Details Details
技术
Technology
Si Si - - Si Si Si Si Si Si
安装风格
Mounting Style
Through Hole Through Hole - - Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
封装 / 箱体
Package / Case
TO-92-3 TO-92-3 - - TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3
Number of Channels 1 Channel 1 Channel - - 1 Channel 1 Channel 1 Channel 1 Channel 1 Channel 1 Channel
Transistor Polarity N-Channel N-Channel - - N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Vds - Drain-Source Breakdown Voltage 400 V 400 V - - 400 V 400 V 400 V 400 V 400 V 400 V
Id - Continuous Drain Current 2 A 2 A - - 2 A 220 mA 2 A 220 mA 220 mA 220 mA
Rds On - Drain-Source Resistance 5 Ohms 5 Ohms - - 5 Ohms 5 Ohms 5 Ohms 5 Ohms 5 Ohms 5 Ohms
Vgs - Gate-Source Voltage 20 V 20 V - - 20 V 20 V 20 V 20 V - 20 V
最小工作温度
Minimum Operating Temperature
- 55 C - 55 C - - - 55 C - 55 C - 55 C - 55 C - - 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C + 150 C - - + 150 C + 150 C + 150 C + 150 C - + 150 C
Configuration Single Single - - Single Single Single Single Single Single
Channel Mode Enhancement Enhancement - - Enhancement Enhancement Enhancement Enhancement Enhancement Enhancement
Fall Time 22 ns 22 ns - - 22 ns 22 ns 22 ns 22 ns - 22 ns
Pd-功率耗散
Pd - Power Dissipation
1 W 1 W - - 1 W 740 mW 1 W 740 mW - 740 mW
产品
Product
MOSFET Small Signal MOSFET Small Signal - - MOSFET Small Signal MOSFET Small Signal - MOSFET Small Signal - MOSFET Small Signal
Rise Time 15 ns 15 ns - - 15 ns 15 ns 15 ns 15 ns - 15 ns
工厂包装数量
Factory Pack Quantity
2000 2000 - - 2000 2000 1000 2000 2000 2000
Transistor Type 1 N-Channel 1 N-Channel - - 1 N-Channel 1 N-Channel 1 N-Channel 1 N-Channel 1 N-Channel 1 N-Channel
Typical Turn-Off Delay Time 20 ns 20 ns - - 20 ns 20 ns 20 ns 20 ns - 20 ns
Typical Turn-On Delay Time 4 ns 4 ns - - 4 ns 4 ns 4 ns 4 ns - 4 ns
单位重量
Unit Weight
0.016000 oz 0.007760 oz - - 0.007760 oz 0.016000 oz 0.007760 oz 0.016000 oz 0.016000 oz 0.016000 oz
高度
Height
- 5.33 mm - - 5.33 mm 5.33 mm 5.33 mm 5.33 mm - 5.33 mm
长度
Length
- 5.21 mm - - 5.21 mm 5.21 mm 5.21 mm 5.21 mm - 5.21 mm
宽度
Width
- 4.19 mm - - 4.19 mm 4.19 mm 4.19 mm 4.19 mm - 4.19 mm
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