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mun5111

eeworld网站中关于mun5111有31个元器件。有MUN5111、MUN5111等。可以通过横向对比他们之间的异同,来寻找器件间替代的可能。
器件名 厂商 描 述 功能
MUN5111 ON Semiconductor(安森美) SMALL SIGNAL TRANSISTOR 下载
MUN5111 AITSEMI BIAS RESISTOR TRANSISTOR PNP SILICON SURFACE MOUNT TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK 下载
MUN5111 Weitron Technology bias resistor transistor pnp silicon 下载
MUN5111 Motorola ( NXP ) Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, CASE 419-02, SC-70, 3 PIN 下载
MUN5111 YEA SHIN TECHNOLOGY CO.,LTD Bias Resistor Transistor 下载
MUN5111DW ON Semiconductor(安森美) Dual Bias Resistor Transistors 下载
MUN5111DW Weitron Technology dual bias resistor transistor pnp silicon 下载
MUN5111DW YEA SHIN TECHNOLOGY CO.,LTD Dual Bias Resistor Transistors 下载
MUN5111DW_09 Weitron Technology dual bias resistor transistor 下载
MUN5111DW1 ON Semiconductor(安森美) 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR 下载
MUN5111DW1_14 ON Semiconductor(安森美) Dual PNP Bias Resistor Transistors 下载
MUN5111DW1T1 ON Semiconductor(安森美) 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR 下载
MUN5111DW1T1 ETL [E-Tech Electronics LTD] Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 下载
MUN5111DW1T1 Motorola ( NXP ) Dual Bias Resistor Transistors 下载
MUN5111DW1T1 LRC dual bias resistor transistors 下载
MUN5111DW1T1 Rochester Electronics 100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, SC-70, SC-88, 6 PIN 下载
MUN5111DW1T1_05 ON Semiconductor(安森美) 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR 下载
MUN5111DW1T1_06 ON Semiconductor(安森美) 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR 下载
MUN5111DW1T1G ON Semiconductor(安森美) 额定功率:250mW 集电极电流Ic:100mA 集射极击穿电压Vce:50V 晶体管类型:2 个 PNP 预偏压式(双) 双PNP带阻三极管,50V,100mA,R=10K/10K 下载
MUN5111DW1T3 Motorola ( NXP ) 100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-01, 6 PIN 下载
MUN5111RT1 LRC Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon 下载
MUN5111T1 ON Semiconductor(安森美) 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR 下载
MUN5111T1 Motorola ( NXP ) 100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN 下载
MUN5111T1 LRC Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, 下载
MUN5111T1 NXP(恩智浦) PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,50MA I(C),SOT-323 下载
MUN5111T1_10 ON Semiconductor(安森美) Bias Resistor Transistors 下载
MUN5111T1G ON Semiconductor(安森美) 额定功率:202mW 集电极电流Ic:100mA 集射极击穿电压Vce:50V 晶体管类型:PNP - 预偏压 PNP带阻三极管,50V,100mA,R=10K/10K 下载
MUN5111T3 ON Semiconductor(安森美) 100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN 下载
MUN5111T3 Motorola ( NXP ) 100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN 下载
MUN5111W ETL [E-Tech Electronics LTD] Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 下载
关于mun5111相关文档资料:
对应元器件 pdf文档资料下载
MUN5111DW1T1 、 MUN5111DW1T1_05 、 MUN5111DW1T1G 下载文档
MUN5111DW1T1_06 、 MUN5111T1 下载文档
MUN5111T1 、 MUN5111T3 下载文档
MUN5111DW1T1 、 MUN5111W 下载文档
MUN5111DW1T1 、 MUN5111W 下载文档
MUN5111DW 、 MUN5111DW_09 下载文档
MUN5111T1 下载文档
MUN5111T1 下载文档
MUN5111 下载文档
MUN5111T1_10 下载文档
mun5111资料比对:
型号 MUN5111DW1T1 MUN5111DW1T1_05 MUN5111DW1T1G
描述 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR 额定功率:250mW 集电极电流Ic:100mA 集射极击穿电压Vce:50V 晶体管类型:2 个 PNP 预偏压式(双) 双PNP带阻三极管,50V,100mA,R=10K/10K
元件数量 2 2 2
端子数量 6 6 6
表面贴装 YES Yes YES
端子形式 GULL WING GULL WING GULL WING
端子位置 DUAL DUAL
晶体管应用 SWITCHING 开关 SWITCHING
晶体管元件材料 SILICON SILICON
厂商名称 ON Semiconductor(安森美) - ON Semiconductor(安森美)
零件包装代码 SC-88 - SC-88
包装说明 SMALL OUTLINE, R-PDSO-G6 - SMALL OUTLINE, R-PDSO-G6
针数 6 - 6
制造商包装代码 CASE 419B-02 - 419B-02
Reach Compliance Code _compli - compliant
ECCN代码 EAR99 - EAR99
其他特性 BUILT-IN BIAS RESISTOR RATIO IS 1 - BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC) 0.1 A - 0.1 A
集电极-发射极最大电压 50 V - 50 V
配置 SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR - SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 35 - 35
JESD-30 代码 R-PDSO-G6 - R-PDSO-G6
JESD-609代码 e0 - e3
湿度敏感等级 1 - 1
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR
封装形式 SMALL OUTLINE - SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED - 260
极性/信道类型 PNP - PNP
最大功率耗散 (Abs) 0.15 W - 0.15 W
认证状态 Not Qualified - Not Qualified
端子面层 Tin/Lead (Sn/Pb) - Tin (Sn)
处于峰值回流温度下的最长时间 NOT SPECIFIED - 40
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