Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the MUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which
is ideal for low–power surface mount applications where board space is at a premium.
. Simplifies Circuit Design
. Reduces Board Space
. Reduces Component Count
. Available in 8 mm, 7 inch/3000 Unit Tape and Reel
MUN5111DW1T1
Series
6
5
4
1
2
3
SOT-363
CASE 419B STYLE1
6
5
4
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Symbol Value
Unit
Collector-Base Voltage
V
CBO
–50
Vdc
Collector-Emitter Voltage
V
CEO
–50
Vdc
Collector Current
I
C
–100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature
1. FR–4 @ Minimum Pad
P
D
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
670 (Note 1.)
490 (Note 2.)
mW
mW/°C
°C/W
Q
2
R
2
R
1
1
2
R
1
R
2
Q
1
3
MARKING DIAGRAM
6
5
4
XX
1
2
3
R
θJA
xx = Device Marking
=
(See Page 2)
Symbol
P
D
Max
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
–55 to +150
Unit
mW
mW/°C
°C/W
°C/W
°C
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
R
θJA
R
θJL
T
J
, T
stg
2. FR–4 @ 1.0 x 1.0 inch Pad
MUN5111dw–1/11
MUN5111DW1T1
DEVICE MARKING AND RESISTOR VALUES
Device
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1 (Note 3.)
MUN5116DW1T1 (Note 3.)
MUN5130DW1T1 (Note 3.)
MUN5131DW1T1 (Note 3.)
MUN5132DW1T1 (Note 3.)
MUN5133DW1T1 (Note 3.)
MUN5134DW1T1 (Note 3.)
MUN5135DW1T1 (Note 3.)
MUN5136DW1T1 (Note 3.)
MUN5137DW1T1 (Note 3.)
Package
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
Marking
0A
0B
0C
0D
0E
0F
0G
0H
0J
0K
0L
0M
0N
0P
R
1
(K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
R
2
(K)
10
22
47
47
–
–
1.0
2.2
4.7
47
47
47
100
22
Series
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= –50 V, I
E
= 0)
I
CBO
Collector-Emitter Cutoff Current (V
CE
= –50 V, I
B
= 0)
I
CEO
I
EBO
Emitter-Base Cutoff Current
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
Collector-Base Breakdown Voltage (I
C
= –10
µA,
I
E
= 0)
V
(BR)CBO
Collector-Emitter Breakdown Voltage(Note 4.)(I
C
= –2.0 mA,I
B
=0) V
(BR)CEO
ON CHARACTERISTICS
(Note 4.)
Collector-Emitter Saturation Voltage (I
C
= –10mA,I
E
= –0.3 mA)
(I
C
= –10mA, I
B
= –5mA)
(I
C
= –10mA, I
B
= –1mA)
MUN5130DW1T1/MUN5131DW1T1
MUN5115DW1T1/MUN5116DW1T1
V
CE(sat)
Min
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–50
–50
–
Typ
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
Unit
(V
EB
= –6.0 V, I
C
= 0)
–100
nAdc
–500
nAdc
–0.5 mAdc
–0.2
–0.1
–0.2
–0.9
–1.9
–4.3
–2.3
–1.5
–0.18
–0.13
–0.2
–0.05
–0.13
–
Vdc
–
Vdc
–0.25
Vdc
MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
MUN5111dw–2/11
MUN5111DW1T1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
,)
Characteristic
ON CHARACTERISTICS(Note
5.)
DC Current Gain
(V
CE
= –10 V, I
C
= –5.0 mA)
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5135DW1T1
MUN5135DW1T1
MUN5111DW1T1
MUN5112DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
(V
CC
= –5.0 V, V
B
= –3.5 V, R
L
= 1.0 kΩ) MUN5113DW1T1
(V
CC
= –5.0 V, V
B
= –5.5 V, R
L
= 1.0 kΩ) MUN5136DW1T1
(V
CC
= –5.0 V, V
B
= –4.0 V, R
L
= 1.0 kΩ) MUN5137DW1T1
Output Voltage (off) (V
CC
= –5.0 V, V
B
= –0.5 V, R
L
= 1.0 kΩ)
(V
CC
= –5.0 V, V
B
= –0.05 V, R
L
= 1.0 kΩ) MUN5130DW1T1
(V
CC
= –5.0 V, V
B
= –0.25 V, R
L
= 1.0 kΩ) MUN5115DW1T1
MUN5116DW1T1
MUN5131DW1T1
MUN5133DW1T1
Output Voltage (on)
(V
CC
= –5.0 V, V
B
= –2.5 V, R
L
= 1.0 kΩ)
V
OL
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–4.9
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–
Symbol
h
FE
(Continued)
Min
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
Typ
60
100
140
140
250
250
5.0
15
27
140
130
140
130
140
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Series
Unit
Vdc
V
OH
Vdc
MUN5111dw–3/11
MUN5111DW1T1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
,)
Characteristic
ON CHARACTERISTICS(Note
5.)
Input Resistor
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
Resistor Ratio
MUN5111DW1T1/MUN5112DW1T1/ R
1
/R
2
MUN5113DW1T1/MUN5136DW1T1
MUN5114DW1T1
MUN5115DW1T1/MUN5116DW1T1
MUN5130DW1T1/MUN5131DW1T1/MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5137DW1T1
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
0.8
0.17
–
0.8
0.055
0.38
0.038
1.7
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
–
1.2
0.185
0.56
0.056
2.6
Symbol
(Continued)
Min
Typ
Max
Series
Unit
kΩ
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
0
–50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
MUN5111dw–4/11
MUN5111DW1T1
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5111DW1T1
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Series
1
h
FE
, DC CURRENT GAIN (NORMALIZED)
1000
0.1
100
0.01
0
20
40
50
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 2. V
CE(sat)
versus I
C
4
100
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
C ob CAPACITANCE (pF)
10
3
1
2
0.1
1
0.01
0
0
10
20
30
40
50
0.001
0
1
2
3
4
5
6
7
8
9
10
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
Figure 4. Output Capacitance
100
Figure 5. Output Current versus Input Voltage
V in , INPUT VOLTAGE (VOLTS)
10
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
MUN5111dw–5/11
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
