| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| MTB30P06V | Motorola ( NXP ) | TMOS POWER FET 30 AMPERES 60 VOLTS | 下载 |
| MTB30P06V | Rochester Electronics | 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 | 下载 |
| MTB30P06V | ON Semiconductor(安森美) | 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET | 下载 |
| MTB30P06VG | ON Semiconductor(安森美) | 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET | 下载 |
| MTB30P06VT4 | ON Semiconductor(安森美) | MOSFET 60V 30A P-Channel | 下载 |
| MTB30P06VT4 | Rochester Electronics | 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 | 下载 |
| MTB30P06VT4 | Motorola ( NXP ) | 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET | 下载 |
| MTB30P06VT4G | 台湾微碧(VBsemi) | P-Channel 60 V (D-S) MOSFET | 下载 |
| MTB30P06VT4G | ON Semiconductor(安森美) | MOSFET PFET D2PAK 60V 30A 80mOhm | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| MTB30P06V 、 MTB30P06VT4 | 下载文档 |
| MTB30P06V 、 MTB30P06VG | 下载文档 |
| MTB30P06VT4G | 下载文档 |
| MTB30P06VT4 | 下载文档 |
| MTB30P06V | 下载文档 |
| MTB30P06VT4 | 下载文档 |
| 型号 | MTB30P06V | MTB30P06VG |
|---|---|---|
| 描述 | 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET | 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 是否Rohs认证 | 不符合 | 符合 |
| 包装说明 | CASE 418B-04, D2PAK-3 | ROHS COMPLIANT, CASE 418B-04, D2PAK-3 |
| 针数 | 3 | 3 |
| 制造商包装代码 | CASE 418B-04 | CASE 418B-04 |
| Reach Compliance Code | _compli | _compli |
| ECCN代码 | EAR99 | EAR99 |
| 其他特性 | AVALANCHE RATED | AVALANCHE RATED |
| 雪崩能效等级(Eas) | 450 mJ | 450 mJ |
| 外壳连接 | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V | 60 V |
| 最大漏极电流 (Abs) (ID) | 30 A | 30 A |
| 最大漏极电流 (ID) | 30 A | 30 A |
| 最大漏源导通电阻 | 0.08 Ω | 0.08 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609代码 | e0 | e3 |
| 湿度敏感等级 | 1 | 1 |
| 元件数量 | 1 | 1 |
| 端子数量 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | 260 |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL |
| 最大功率耗散 (Abs) | 125 W | 125 W |
| 最大脉冲漏极电流 (IDM) | 105 A | 105 A |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin (Sn) |
| 端子形式 | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | 40 |
| 晶体管应用 | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON |
| Base Number Matches | 1 | 1 |
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