参数名称 | 属性值 |
产品种类 Product Category | SCR Modules |
制造商 Manufacturer | Infineon(英飞凌) |
Non Repetitive On-State Current | 18000 A |
Rated Repetitive Off-State Voltage VDRM | 4200 V |
Off-State Leakage Current @ VDRM IDRM | 200 mA |
Holding Current Ih Max | 350 mA |
Gate Trigger Voltage - Vgt | 2.5 V |
Gate Trigger Current - Igt | 350 mA |
最小工作温度 Minimum Operating Temperature | - 40 C |
最大工作温度 Maximum Operating Temperature | + 125 C |
电路类型 Circuit Type | PCT |
电流额定值 Current Rating | 1280 A |
工厂包装数量 Factory Pack Quantity | 1 |
T731N42TOF | T731N44TOH | T731N44TOHXPSA1 | T731N43TOH | T731N45TOH | T731N39TOH | T731N41TOH | T731N38TOH | T731N42TOH | T731N40TOH | |
---|---|---|---|---|---|---|---|---|---|---|
描述 | The T731N Phase Control Thyristor discs are assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 75mm and a height of 26mm. | SCR MODULE 4400V 2010A DO200AC | Silicon Controlled Rectifier, 1280000mA I(T), 4300V V(DRM) | Silicon Controlled Rectifier, 1280000mA I(T), 4500V V(DRM) | Silicon Controlled Rectifier, 1280000mA I(T), 3900V V(DRM) | Silicon Controlled Rectifier, 1280000mA I(T), 4100V V(DRM) | Silicon Controlled Rectifier, 2010A I(T)RMS, 925000mA I(T), 3800V V(DRM), 3800V V(RRM), 1 Element | Silicon Controlled Rectifier, 2010A I(T)RMS, 925000mA I(T), 4200V V(DRM), 4200V V(RRM), 1 Element | Silicon Controlled Rectifier, 2010A I(T)RMS, 925000mA I(T), 4000V V(DRM), 4000V V(RRM), 1 Element | |
是否Rohs认证 | - | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | - | - | - |
Reach Compliance Code | - | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
标称电路换相断开时间 | - | 500 µs | - | 500 µs | 500 µs | 500 µs | 500 µs | 500 µs | 500 µs | 500 µs |
关态电压最小值的临界上升速率 | - | 2000 V/us | - | 2000 V/us | 2000 V/us | 2000 V/us | 2000 V/us | 2000 V/us | 2000 V/us | 2000 V/us |
最大直流栅极触发电流 | - | 350 mA | 350 mA | 350 mA | 350 mA | 350 mA | 350 mA | 350 mA | 350 mA | 350 mA |
最大直流栅极触发电压 | - | 2.5 V | - | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
最大维持电流 | - | 350 mA | - | 350 mA | 350 mA | 350 mA | 350 mA | 350 mA | 350 mA | 350 mA |
最大漏电流 | - | 150 mA | - | 200 mA | 200 mA | 200 mA | 200 mA | 150 mA | 150 mA | 150 mA |
通态非重复峰值电流 | - | 17000 A | - | 18000 A | 18000 A | 18000 A | 18000 A | 17000 A | 17000 A | 17000 A |
最大通态电流 | - | 925000 A | - | 1280000 A | 1280000 A | 1280000 A | 1280000 A | 925000 A | 925000 A | 925000 A |
最高工作温度 | - | 125 °C | - | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | - | -40 °C | - | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
峰值回流温度(摄氏度) | - | NOT SPECIFIED | NOT SPECIFIED | 225 | 225 | 225 | 225 | - | - | - |
断态重复峰值电压 | - | 4400 V | 4400 V | 4300 V | 4500 V | 3900 V | 4100 V | 3800 V | 4200 V | 4000 V |
处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - | - |
触发设备类型 | - | SCR | SCR | SCR | SCR | SCR | SCR | SCR | SCR | SCR |
Base Number Matches | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
JESD-609代码 | - | - | - | e3 | e3 | e3 | e3 | e3 | e3 | e3 |
端子面层 | - | - | - | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN |
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