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CY7C1612KV18-333BZXC

产品描述SRAM 144Mb 1.8V 333Mhz 8M x 18 QDR II SRAM
产品类别存储    存储   
文件大小614KB,共33页
制造商Cypress(赛普拉斯)
标准
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CY7C1612KV18-333BZXC概述

SRAM 144Mb 1.8V 333Mhz 8M x 18 QDR II SRAM

CY7C1612KV18-333BZXC规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Cypress(赛普拉斯)
零件包装代码BGA
包装说明LBGA, BGA165,11X15,40
针数165
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
Factory Lead Time1 week
Is SamacsysN
最长访问时间0.45 ns
其他特性PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)333 MHz
I/O 类型SEPARATE
JESD-30 代码R-PBGA-B165
JESD-609代码e1
长度17 mm
内存密度150994944 bit
内存集成电路类型QDR SRAM
内存宽度18
功能数量1
端子数量165
字数8388608 words
字数代码8000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织8MX18
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装等效代码BGA165,11X15,40
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)260
电源1.5/1.8,1.8 V
认证状态Not Qualified
座面最大高度1.4 mm
最大待机电流0.41 A
最小待机电流1.7 V
最大压摆率0.97 mA
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间40
宽度15 mm
Base Number Matches1

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CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
144-Mbit QDR
®
II SRAM Two-Word
Burst Architecture
144-Mbit QDR
®
II SRAM Two-Word Burst Architecture
Features
Configurations
CY7C1625KV18 – 16 M × 9
CY7C1612KV18 – 8 M × 18
CY7C1614KV18 – 4 M × 36
Separate independent read and write data ports
Supports concurrent transactions
360-MHz clock for high bandwidth
Two-word burst on all accesses
Double data rate (DDR) interfaces on both read and write ports
(data transferred at 720 MHz) at 360 MHz
Two input clocks (K and K) for precise DDR timing
SRAM uses rising edges only
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
Single multiplexed address input bus latches address inputs
for both read and write ports
Separate port selects for depth expansion
Synchronous internally self-timed writes
Quad data rate (QDR
®
) II operates with 1.5-cycle read latency
when DOFF is asserted high
Operates similar to QDR I device with 1 cycle read latency when
DOFF is asserted low
Available in × 9, × 18, and × 36 configurations
Full data coherency, providing most current data
Core V
DD
= 1.8 V (± 0.1 V); I/O V
DDQ
= 1.4 V to V
DD
Supports both 1.5 V and 1.8 V I/O supply
Available in 165-ball fine-pitch ball grid array (FBGA) package
(15 × 17 × 1.4 mm)
Offered in both Pb-free and non Pb-free packages
Variable drive high-speed transceiver logic (HSTL) output
buffers
JTAG 1149.1 compatible test access port
Phase Locked Loop (PLL) for accurate data placement
Functional Description
The CY7C1625KV18, CY7C1612KV18, and CY7C1614KV18
are 1.8-V synchronous pipelined SRAMs, equipped with QDR II
architecture. QDR II architecture consists of two separate ports:
the read port and the write port to access the memory array. The
read port has dedicated data outputs to support read operations
and the write port has dedicated data inputs to support write
operations. QDR II architecture has separate data inputs and
data outputs to completely eliminate the need to ‘turn around’ the
data bus that exists with common I/O devices. Access to each
port is through a common address bus. Addresses for read and
write addresses are latched on alternate rising edges of the input
(K) clock. Accesses to the QDR II read and write ports are
completely independent of one another. To maximize data
throughput, both read and write ports are equipped with DDR
interfaces. Each address location is associated with two 9-bit
words (CY7C1625KV18), 18-bit words (CY7C1612KV18), or
36-bit words (CY7C1614KV18) that burst sequentially into or out
of the device. Because data can be transferred into and out of
the device on every rising edge of both input clocks (K and K and
C and C), memory bandwidth is maximized while simplifying
system design by eliminating bus turnarounds.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
For a complete list of related documentation, click
here.
Selection Guide
Description
Maximum operating frequency
Maximum operating current
× 18
360 MHz
360
× 9 Not Offered
1025
× 36 Not Offered
333 MHz
333
950
970
1160
300 MHz
300
880
910
1080
250 MHz
250
780
800
950
Unit
MHz
mA
Cypress Semiconductor Corporation
Document Number: 001-16238 Rev. *N
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised January 4, 2016

CY7C1612KV18-333BZXC相似产品对比

CY7C1612KV18-333BZXC CY7C1612KV18-300BZXI CY7C1625KV18-250BZXC
描述 SRAM 144Mb 1.8V 333Mhz 8M x 18 QDR II SRAM SRAM 144MB (8Mx18) QDR II 1.8V, 300MHz SRAM 144MB (16Mx9) QDR II 1.8V, 250MHz
产品种类
Product Category
- SRAM SRAM
制造商
Manufacturer
- Cypress(赛普拉斯) Cypress(赛普拉斯)
RoHS - Details Details
Memory Size - 144 Mbit 144 Mbit
Organization - 8 M x 18 16 M x 9
Access Time - 0.45 ns 0.45 ns
Maximum Clock Frequency - 300 MHz 250 MHz
接口类型
Interface Type
- Parallel Parallel
电源电压-最大
Supply Voltage - Max
- 1.9 V 1.9 V
电源电压-最小
Supply Voltage - Min
- 1.7 V 1.7 V
Supply Current - Max - 910 mA 780 mA
最小工作温度
Minimum Operating Temperature
- - 40 C 0 C
最大工作温度
Maximum Operating Temperature
- + 85 C + 70 C
安装风格
Mounting Style
- SMD/SMT SMD/SMT
封装 / 箱体
Package / Case
- FBGA-165 FBGA-165
系列
Packaging
- Tray Tray
Memory Type - QDR QDR
工厂包装数量
Factory Pack Quantity
- 105 105
类型
Type
- Synchronous Synchronous
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