电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

CY7C1625KV18-250BZXC

产品描述SRAM 144MB (16Mx9) QDR II 1.8V, 250MHz
产品类别存储   
文件大小614KB,共33页
制造商Cypress(赛普拉斯)
下载文档 详细参数 选型对比 全文预览

CY7C1625KV18-250BZXC在线购买

供应商 器件名称 价格 最低购买 库存  
CY7C1625KV18-250BZXC - - 点击查看 点击购买

CY7C1625KV18-250BZXC概述

SRAM 144MB (16Mx9) QDR II 1.8V, 250MHz

CY7C1625KV18-250BZXC规格参数

参数名称属性值
产品种类
Product Category
SRAM
制造商
Manufacturer
Cypress(赛普拉斯)
RoHSDetails
Memory Size144 Mbit
Organization16 M x 9
Access Time0.45 ns
Maximum Clock Frequency250 MHz
接口类型
Interface Type
Parallel
电源电压-最大
Supply Voltage - Max
1.9 V
电源电压-最小
Supply Voltage - Min
1.7 V
Supply Current - Max780 mA
最小工作温度
Minimum Operating Temperature
0 C
最大工作温度
Maximum Operating Temperature
+ 70 C
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
FBGA-165
系列
Packaging
Tray
Memory TypeQDR
工厂包装数量
Factory Pack Quantity
105
类型
Type
Synchronous

文档预览

下载PDF文档
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
144-Mbit QDR
®
II SRAM Two-Word
Burst Architecture
144-Mbit QDR
®
II SRAM Two-Word Burst Architecture
Features
Configurations
CY7C1625KV18 – 16 M × 9
CY7C1612KV18 – 8 M × 18
CY7C1614KV18 – 4 M × 36
Separate independent read and write data ports
Supports concurrent transactions
360-MHz clock for high bandwidth
Two-word burst on all accesses
Double data rate (DDR) interfaces on both read and write ports
(data transferred at 720 MHz) at 360 MHz
Two input clocks (K and K) for precise DDR timing
SRAM uses rising edges only
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
Single multiplexed address input bus latches address inputs
for both read and write ports
Separate port selects for depth expansion
Synchronous internally self-timed writes
Quad data rate (QDR
®
) II operates with 1.5-cycle read latency
when DOFF is asserted high
Operates similar to QDR I device with 1 cycle read latency when
DOFF is asserted low
Available in × 9, × 18, and × 36 configurations
Full data coherency, providing most current data
Core V
DD
= 1.8 V (± 0.1 V); I/O V
DDQ
= 1.4 V to V
DD
Supports both 1.5 V and 1.8 V I/O supply
Available in 165-ball fine-pitch ball grid array (FBGA) package
(15 × 17 × 1.4 mm)
Offered in both Pb-free and non Pb-free packages
Variable drive high-speed transceiver logic (HSTL) output
buffers
JTAG 1149.1 compatible test access port
Phase Locked Loop (PLL) for accurate data placement
Functional Description
The CY7C1625KV18, CY7C1612KV18, and CY7C1614KV18
are 1.8-V synchronous pipelined SRAMs, equipped with QDR II
architecture. QDR II architecture consists of two separate ports:
the read port and the write port to access the memory array. The
read port has dedicated data outputs to support read operations
and the write port has dedicated data inputs to support write
operations. QDR II architecture has separate data inputs and
data outputs to completely eliminate the need to ‘turn around’ the
data bus that exists with common I/O devices. Access to each
port is through a common address bus. Addresses for read and
write addresses are latched on alternate rising edges of the input
(K) clock. Accesses to the QDR II read and write ports are
completely independent of one another. To maximize data
throughput, both read and write ports are equipped with DDR
interfaces. Each address location is associated with two 9-bit
words (CY7C1625KV18), 18-bit words (CY7C1612KV18), or
36-bit words (CY7C1614KV18) that burst sequentially into or out
of the device. Because data can be transferred into and out of
the device on every rising edge of both input clocks (K and K and
C and C), memory bandwidth is maximized while simplifying
system design by eliminating bus turnarounds.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
For a complete list of related documentation, click
here.
Selection Guide
Description
Maximum operating frequency
Maximum operating current
× 18
360 MHz
360
× 9 Not Offered
1025
× 36 Not Offered
333 MHz
333
950
970
1160
300 MHz
300
880
910
1080
250 MHz
250
780
800
950
Unit
MHz
mA
Cypress Semiconductor Corporation
Document Number: 001-16238 Rev. *N
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised January 4, 2016

CY7C1625KV18-250BZXC相似产品对比

CY7C1625KV18-250BZXC CY7C1612KV18-300BZXI CY7C1612KV18-333BZXC
描述 SRAM 144MB (16Mx9) QDR II 1.8V, 250MHz SRAM 144MB (8Mx18) QDR II 1.8V, 300MHz SRAM 144Mb 1.8V 333Mhz 8M x 18 QDR II SRAM
产品种类
Product Category
SRAM SRAM -
制造商
Manufacturer
Cypress(赛普拉斯) Cypress(赛普拉斯) -
RoHS Details Details -
Memory Size 144 Mbit 144 Mbit -
Organization 16 M x 9 8 M x 18 -
Access Time 0.45 ns 0.45 ns -
Maximum Clock Frequency 250 MHz 300 MHz -
接口类型
Interface Type
Parallel Parallel -
电源电压-最大
Supply Voltage - Max
1.9 V 1.9 V -
电源电压-最小
Supply Voltage - Min
1.7 V 1.7 V -
Supply Current - Max 780 mA 910 mA -
最小工作温度
Minimum Operating Temperature
0 C - 40 C -
最大工作温度
Maximum Operating Temperature
+ 70 C + 85 C -
安装风格
Mounting Style
SMD/SMT SMD/SMT -
封装 / 箱体
Package / Case
FBGA-165 FBGA-165 -
系列
Packaging
Tray Tray -
Memory Type QDR QDR -
工厂包装数量
Factory Pack Quantity
105 105 -
类型
Type
Synchronous Synchronous -
困扰我好几天的问题
我做了一个简单的光电检测电路 运放用的是741,单电源供电+5v,当光敏二极管没接收光时,输出+2.4v,属于正常么?...
jlu_allenhc 模拟电子
谈谈MSP-EXP430FR5739实验板套件
近来看到我们的论坛又有了新的团购,是一个MCU的实验套件,在查看了它的数据手册以后,发现在功能上与其他MSP430系列并无太大的差别,但是一个铁电存储器(FRAM)格外吸引我的眼球。说实在的, ......
wllyj 微控制器 MCU
NOR市场晴转多云 spansion突破寻曙光
如今,无论我们在车上、家里或是旅途中,都希望能够随时随地顺畅地浏览多媒体内容和信息。特别是在玩游戏时,我们更是贪求一个畅快、愉悦的美好体验。而这些体验的实现与提升,很大程度上取决 ......
思潇 嵌入式系统
基于Keil的LM3S811调试笔记
拿到开发板后就第一时间对LM3S811进行调试,图片已经有网友上传了我就不再上传,就说说自己调试碰到的问题一级解决方法! 1、由于我的电脑没有光驱,所以智能是手动安装仿真器的驱动,安装的过 ......
liuceone 微控制器 MCU
在wince 下怎么能读取 一个像素 alpha 通道的值
我想把一个带 透明通道的bitmap作为前景贴到一个不带透明通道的背景bitmap上,试了几种方法 都不理想,包括 TransparentBlt(...),alphablend(...),还使用过maskdc 的方法,都不理想。 前两种 ......
debiao668 嵌入式系统
免费申领 《科学与研究红外应用指南》啦!
>>>点此注册...
eric_wang 测试/测量

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2016  2209  902  194  335  7  42  41  56  32 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved