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CY7C1612KV18-300BZXI

产品描述SRAM 144MB (8Mx18) QDR II 1.8V, 300MHz
产品类别存储   
文件大小614KB,共33页
制造商Cypress(赛普拉斯)
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CY7C1612KV18-300BZXI概述

SRAM 144MB (8Mx18) QDR II 1.8V, 300MHz

CY7C1612KV18-300BZXI规格参数

参数名称属性值
产品种类
Product Category
SRAM
制造商
Manufacturer
Cypress(赛普拉斯)
RoHSDetails
Memory Size144 Mbit
Organization8 M x 18
Access Time0.45 ns
Maximum Clock Frequency300 MHz
接口类型
Interface Type
Parallel
电源电压-最大
Supply Voltage - Max
1.9 V
电源电压-最小
Supply Voltage - Min
1.7 V
Supply Current - Max910 mA
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 85 C
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
FBGA-165
系列
Packaging
Tray
Memory TypeQDR
工厂包装数量
Factory Pack Quantity
105
类型
Type
Synchronous

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CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
144-Mbit QDR
®
II SRAM Two-Word
Burst Architecture
144-Mbit QDR
®
II SRAM Two-Word Burst Architecture
Features
Configurations
CY7C1625KV18 – 16 M × 9
CY7C1612KV18 – 8 M × 18
CY7C1614KV18 – 4 M × 36
Separate independent read and write data ports
Supports concurrent transactions
360-MHz clock for high bandwidth
Two-word burst on all accesses
Double data rate (DDR) interfaces on both read and write ports
(data transferred at 720 MHz) at 360 MHz
Two input clocks (K and K) for precise DDR timing
SRAM uses rising edges only
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
Single multiplexed address input bus latches address inputs
for both read and write ports
Separate port selects for depth expansion
Synchronous internally self-timed writes
Quad data rate (QDR
®
) II operates with 1.5-cycle read latency
when DOFF is asserted high
Operates similar to QDR I device with 1 cycle read latency when
DOFF is asserted low
Available in × 9, × 18, and × 36 configurations
Full data coherency, providing most current data
Core V
DD
= 1.8 V (± 0.1 V); I/O V
DDQ
= 1.4 V to V
DD
Supports both 1.5 V and 1.8 V I/O supply
Available in 165-ball fine-pitch ball grid array (FBGA) package
(15 × 17 × 1.4 mm)
Offered in both Pb-free and non Pb-free packages
Variable drive high-speed transceiver logic (HSTL) output
buffers
JTAG 1149.1 compatible test access port
Phase Locked Loop (PLL) for accurate data placement
Functional Description
The CY7C1625KV18, CY7C1612KV18, and CY7C1614KV18
are 1.8-V synchronous pipelined SRAMs, equipped with QDR II
architecture. QDR II architecture consists of two separate ports:
the read port and the write port to access the memory array. The
read port has dedicated data outputs to support read operations
and the write port has dedicated data inputs to support write
operations. QDR II architecture has separate data inputs and
data outputs to completely eliminate the need to ‘turn around’ the
data bus that exists with common I/O devices. Access to each
port is through a common address bus. Addresses for read and
write addresses are latched on alternate rising edges of the input
(K) clock. Accesses to the QDR II read and write ports are
completely independent of one another. To maximize data
throughput, both read and write ports are equipped with DDR
interfaces. Each address location is associated with two 9-bit
words (CY7C1625KV18), 18-bit words (CY7C1612KV18), or
36-bit words (CY7C1614KV18) that burst sequentially into or out
of the device. Because data can be transferred into and out of
the device on every rising edge of both input clocks (K and K and
C and C), memory bandwidth is maximized while simplifying
system design by eliminating bus turnarounds.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
For a complete list of related documentation, click
here.
Selection Guide
Description
Maximum operating frequency
Maximum operating current
× 18
360 MHz
360
× 9 Not Offered
1025
× 36 Not Offered
333 MHz
333
950
970
1160
300 MHz
300
880
910
1080
250 MHz
250
780
800
950
Unit
MHz
mA
Cypress Semiconductor Corporation
Document Number: 001-16238 Rev. *N
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised January 4, 2016

CY7C1612KV18-300BZXI相似产品对比

CY7C1612KV18-300BZXI CY7C1625KV18-250BZXC CY7C1612KV18-333BZXC
描述 SRAM 144MB (8Mx18) QDR II 1.8V, 300MHz SRAM 144MB (16Mx9) QDR II 1.8V, 250MHz SRAM 144Mb 1.8V 333Mhz 8M x 18 QDR II SRAM
产品种类
Product Category
SRAM SRAM -
制造商
Manufacturer
Cypress(赛普拉斯) Cypress(赛普拉斯) -
RoHS Details Details -
Memory Size 144 Mbit 144 Mbit -
Organization 8 M x 18 16 M x 9 -
Access Time 0.45 ns 0.45 ns -
Maximum Clock Frequency 300 MHz 250 MHz -
接口类型
Interface Type
Parallel Parallel -
电源电压-最大
Supply Voltage - Max
1.9 V 1.9 V -
电源电压-最小
Supply Voltage - Min
1.7 V 1.7 V -
Supply Current - Max 910 mA 780 mA -
最小工作温度
Minimum Operating Temperature
- 40 C 0 C -
最大工作温度
Maximum Operating Temperature
+ 85 C + 70 C -
安装风格
Mounting Style
SMD/SMT SMD/SMT -
封装 / 箱体
Package / Case
FBGA-165 FBGA-165 -
系列
Packaging
Tray Tray -
Memory Type QDR QDR -
工厂包装数量
Factory Pack Quantity
105 105 -
类型
Type
Synchronous Synchronous -
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