MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
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by MRF553/D
NPN Silicon
RF Low Power Transistor
Designed primarily for wideband large signal predriver stages in the VHF
frequency range.
•
Specified @ 12.5 V, 175 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 11.5 dB
Efficiency 60% (Typ)
•
Cost Effective PowerMacro Package
•
Electroless Tin Plated Leads for Improved Solderability
•
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 75°C (1, 2)
Derate above 75°C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Value
16
36
4.0
500
3.0
40
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
MRF553
1.5 W, 175 MHz
RF LOW POWER
TRANSISTOR
NPN SILICON
CASE 317D–02, STYLE 2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction to Case
Symbol
R
θJC
Max
25
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 5.0 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICES
16
36
36
4.0
—
—
—
—
—
—
—
—
—
—
5.0
Vdc
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc)
hFE
30
—
200
—
NOTES:
(continued)
1. TC, Case temperature measured on collector lead immediately adjacent to body of package.
2. The MRF553 PowerMacro must be properly mounted for reliable operation. AN938, “Mounting Techniques in PowerMacro Transistor,”
discusses methods of mounting and heatsinking.
REV 7
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
MRF553
1
ELECTRICAL CHARACTERISTICS — continued
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
12
20
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 1.5 W, f = 175 MHz)
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 1.5 W, f = 175 MHz)
Load Mismatch Stress
(VCC = 12.5 Vdc, Pout = 1.5 W, f = 175 MHz,
VSWR
≥
10:1 All Phase Angles)
Figures 1, 2
Figures 1, 2
Gpe
η
ψ
No Degradation in Output Power
11.5
50
13
60
—
—
dB
%
—
VBB =
12.5 V
C5
C6
+
R1
L9
R2
D1
B
5xB
VCC =
12.5 V
+
C10
C9
L5
C8
B
C4
L4
D.U.T.
L6
L8
L7
C7
RF
OUTPUT
RF
INPUT
L1
C2
L2
L3
C1
C3
C1 — 36 pF Mini Underwood
C2 — 47 pF Mini Underwood
C3 — 91 pF Mini Underwood
C4 — 68 pF Mini Underwood
C5, C9 — 1.0
µF
Erie Red Cap Capacitor
C6, C10 — 0.1
µF,
35 V Tantulum
C7 — 470 pF Chip Capacitor
C8 — 2200 pF Chip Capacitor
R1 — 4.7 kΩ, 1/4 W
R2 — 100
Ω,
1/4 W
D1 — 1N4148 Diode
L1 — 3 Turns, #18 AWG, 0.210″ ID, 3/16″ Length
L2, L4, L7 — 0.62″, #18 AWG Wire Bent into “V”
L3, L6 — 60 x 125 x 250 Mils Copper Pad on 27 Mils Thick Alumina Substrate
L5 — 12
µH
Molded Choke
L8 — 7 Turns, #18 AWG, 0.170″ ID, 7/16″ Length
L9 — 1.0″, #18 AWG Wire with 5 Ferrite Beads
B — Ferrite Bead
Board Material — Glass Teflon,
ε
r = 2.56, t = 0.0625″
Figure 1. 140 – 175 MHz Broadband Circuit Schematic
MRF553
2
MOTOROLA RF DEVICE DATA
20
18
16
G pe , POWER GAIN (dB)
14
12
10
8
6
4
2
140
150
160
f, FREQUENCY (MHz)
170
Pout = 1.5 W, VCC = 12.5 Vdc
IRL
IRL, INPUT RETURN LOSS (dB)
Gpe
η
c
100
90
80
70
60
50
5 40
10 30
15 20
20 10
0
180
η
c , COLLECTOR EFFICIENCY (%)
ZOL*
Ohms
VCC = 12.5 V; Pin
50 mW
1.7–j4.1
2.3–j4.6
100 mW
1.8–j3.1
2.4–j1.2
150 mW
1.9–j2.7
2.4–j5.7
1.0 W
9.9–j11.1
12.1–j14.9
VCC = 7.5 V; Pout
1.6 W
10.6–j5.1
7.2–j9.8
2.2 W
10–j4.9
8.1–j5.4
VCC = 12.5 V; Pout
1.1 W
28.3–j21.5
2.0 W
16–j20.5
2.6 W
16.3–j16.5
30.8–j23.3 11.4–j20.9 11.1–j14.3
ZOL*
Ohms
VCC = 12.5 V; Pin
25 mW
1.6–j10.7
50 mW
2.5–j7.1
100 mW
2.2–j1.3
VCC = 7.5 V; Pout
1.25 W
31.8–j9.2
1.5 W
32–j8.9
2.0 W
30.2–j10.7
VCC = 12.5 V; Pout
1.5 W
45.8–j7.2
2.25 W
45.2–j3.9
3.0 W
40–j4.5
Figure 2. Typical Performance in
Broadband Circuit
Zin
Ohms
f
Frequency
MHz
140
175
VCC = 7.5 V; Pin
100 mW
1.65–j3.6
2.5–j5.6
200 mW
2.0–j2.6
2.3–j5.9
300 mW
2.3–j1.2
2.8–j4.0
Zin
Ohms
f
Frequency
MHz
90
VCC = 7.5 V; Pin
50 mW
2.5–j9.3
100 mW
2.5–j6.4
200 mW
2.5–j4.4
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
Table 1. Zin and ZOL versus Collector Voltage, Input Power, and Output Power
MOTOROLA RF DEVICE DATA
MRF553
3
2.5
Pout , POWER OUTPUT (WATTS)
Pout , POWER OUTPUT (WATTS)
4
2
3
1.5
2
f = 175 MHz
VCC = 12.5 Vdc
1
1
f = 175 MHz
VCC = 7.5 Vdc
0.5
0
100
200
Pin, POWER INPUT (mW)
300
400
0
50
100
Pin, POWER INPUT (mW)
150
200
Figure 3. Power Output versus Power Input
Figure 4. Power Output versus Power Input
4
Pout , POWER OUTPUT (WATTS)
Pout , OUTPUT POWER (WATTS)
4
3
Pin = 300 mW
2
200 mW
100 mW
1
VCC = 7.5 Vdc
140
150
160
f, FREQUENCY (MHz)
170
180
3
Pin = 150 mW
100 mW
2
50 mW
1
VCC = 12.5 Vdc
140
150
160
f, FREQUENCY (MHz)
170
180
Figure 5. Power Output versus Frequency
Figure 6. Power Output versus Frequency
4
Pin = 150 mW
4
Pin = 150 mW
Pout , POWER OUTPUT (WATTS)
f = 140 MHz
3
Pout , POWER OUTPUT (WATTS)
100 mW
f = 175 MHz
3
100 mW
2
50 mW
1
2
50 mW
1
6
8
10
12
VCC, COLLECTOR VOLTAGE (Vdc)
14
16
6
8
10
12
VCC, COLLECTOR VOLTAGE (Vdc)
14
16
Figure 7. Power Output versus
Collector Voltage
Figure 8. Power Output versus
Collector Voltage
MRF553
4
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
F
R
1
H
4
3
2
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION N AND R.
DIM
A
C
D
F
H
J
K
N
R
T
INCHES
MIN
MAX
0.175
0.205
0.075
0.100
0.033
0.039
0.097
0.104
0.348
0.383
0.008
0.012
0.285
0.320
–––
0.065
–––
0.128
0.025
0.040
MILLIMETERS
MIN
MAX
4.45
5.20
1.91
2.54
0.84
0.99
2.46
2.64
8.84
9.72
0.24
0.30
7.24
8.12
–––
1.65
–––
3.25
0.64
1.01
D
K
N
T
SEATING
PLANE
C
J
STYLE 2:
PIN 1.
2.
3.
4.
COLLECTOR
EMITTER
BASE
EMITTER
CASE 317D–02
ISSUE C
MOTOROLA RF DEVICE DATA
MRF553
5
嵌入式系统
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