Datasheet> 器件分类 > 分立半导体> 晶体管> NDP608B

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NDP608B: 产品描述N-Channel Enhancement Mode Field Effect Transistor; 产品类别分立半导体晶体管; 文件大小73KB，共4页; 制造商Fairchild; 官网地址http://www.fairchildsemi.com/

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NDP608B概述

N-Channel Enhancement Mode Field Effect Transistor

NDP608B规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Fairchild
零件包装代码	TO-220AB
包装说明	FLANGE MOUNT, R-PSFM-T3
针数	3
Reach Compliance Code	compli
ECCN代码	EAR99
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	80 V
最大漏极电流 (Abs) (ID)	32 A
最大漏极电流 (ID)	32 A
最大漏源导通电阻	0.045 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-220AB
JESD-30 代码	R-PSFM-T3
JESD-609代码	e0
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	175 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	100 W
最大脉冲漏极电流 (IDM)	128 A
认证状态	Not Qualified
表面贴装	NO
端子面层	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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DT3055

N-CHANNEL ENHANCEMENT MODE

FIELD EFFECT TRANSISTOR

Features

High Cell Density DMOS Technology

Low On-State Resistance

High Power and Current Capability

Fast Switching Speed

High Transient Tolerance

SOT-223

Dim

Min

6.30

2.90

6.71

3.30

2.22

0.92

1.10

1.55

0.025

0.66

4.55

—

10°

0.254

10°

Max

6.71

3.10

7.29

3.71

2.35

1.00

1.30

1.80

0.102

0.79

4.70

10°

16°

0.356

16°

C D

Mechanical Data

SOT-223 Plastic Case

Terminal Connections: See Outline Drawing

and Internal Circuit Diagram Above

25°C unless otherwise specified

Symbol

DSS

GSS

Note 1a Continuous

Pulsed

Note 1a

Note 1b

Note 1c

, T

STG

Value

±20

±4

±25

3.0

1.3

1.1

-65 to +150

All Dimensions in mm

Maximum Ratings

Drain-Source Voltage

Characteristic

Gate-Source Voltage - Continuous

Drain Current

Maximum Power Dissipation

Operating and Storage Temperature Range

Unit

°C

Thermal Characteristics

Characteristic

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1

Symbol

QJA

QJC

Value

Unit

°C/W

Notes:

1. R

QJA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as

the solder mounting surface of the drain pins. R

QJC

is guaranteed by design while R

QCA

is determined by the user’s board design.

1a. With 1 in

oz 2 oz. copper mounting pad R

QJA

= 42°C/W.

1b. With 0.0066 in

oz 2 oz. copper mounting pad R

QJA

= 95°C/W.

1c. With 0.0123 in

oz 2 oz. copper mounting pad R

QJA

= 110°C/W.

DS11604 Rev. C-4

1 of 4

DT3055

NDP608B相似产品对比

	NDP608B	NDP608BE	NDP608AE	NDP608A	NDB608BE	NDB608AE	NDB608A	NDB608B
描述	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor
是否Rohs认证	不符合	不符合	不符合	不符合	-	不符合	-	-
厂商名称	Fairchild	Fairchild	Fairchild	Fairchild	-	Fairchild	-	-
Reach Compliance Code	compli	compli	unknow	unknow	-	compli	-	-
ECCN代码	EAR99	EAR99	EAR99	EAR99	-	EAR99	-	-
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	-	-
最小漏源击穿电压	80 V	80 V	80 V	80 V	-	80 V	-	-
最大漏极电流 (Abs) (ID)	32 A	32 A	36 A	36 A	-	36 A	-	-
最大漏极电流 (ID)	32 A	32 A	36 A	36 A	-	36 A	-	-
最大漏源导通电阻	0.045 Ω	0.045 Ω	0.042 Ω	0.042 Ω	-	0.042 Ω	-	-
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	-	-
JEDEC-95代码	TO-220AB	TO-220AB	TO-220AB	TO-220AB	-	TO-263AB	-	-
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	-	R-PSSO-G2	-	-
JESD-609代码	e0	e0	e0	e0	-	e0	-	-
元件数量	1	1	1	1	-	1	-	-
端子数量	3	3	3	3	-	2	-	-
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE	-	-
最高工作温度	175 °C	175 °C	175 °C	175 °C	-	175 °C	-	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	-
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	-	-
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	SMALL OUTLINE	-	-
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	-
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-	N-CHANNEL	-	-
最大功率耗散 (Abs)	100 W	100 W	100 W	100 W	-	100 W	-	-
最大脉冲漏极电流 (IDM)	128 A	128 A	144 A	144 A	-	144 A	-	-
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	-	-
表面贴装	NO	NO	NO	NO	-	YES	-	-
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	-	-
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	GULL WING	-	-
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	-	-
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	-
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	-	-
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	-	SILICON	-	-

NDP608B

NDP608B概述

NDP608B规格参数

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