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EBD51RC4AKFA-7B: 产品描述512MB Registered DDR SDRAM DIMM (64M words X 72 bits, 1 Rank); 产品类别存储存储; 文件大小197KB，共19页; 制造商ELPIDA; 官网地址http://www.elpida.com/en

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EBD51RC4AKFA-7B概述

512MB Registered DDR SDRAM DIMM (64M words X 72 bits, 1 Rank)

EBD51RC4AKFA-7B规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	ELPIDA
零件包装代码	DIMM
包装说明	DIMM, DIMM184
针数	184
Reach Compliance Code	unknow
ECCN代码	EAR99
访问模式	SINGLE BANK PAGE BURST
最长访问时间	0.75 ns
其他特性	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	133 MHz
I/O 类型	COMMON
JESD-30 代码	R-XDMA-N184
JESD-609代码	e0
内存密度	4831838208 bi
内存集成电路类型	DDR DRAM MODULE
内存宽度	72
功能数量	1
端口数量	1
端子数量	184
字数	67108864 words
字数代码	64000000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	64MX72
输出特性	3-STATE
封装主体材料	UNSPECIFIED
封装代码	DIMM
封装等效代码	DIMM184
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）	235
电源	2.5 V
认证状态	Not Qualified
刷新周期	8192
自我刷新	YES
最大待机电流	0.444 A
最大压摆率	5.25 mA
最大供电电压 (Vsup)	2.7 V
最小供电电压 (Vsup)	2.3 V
标称供电电压 (Vsup)	2.5 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	NO LEAD
端子节距	1.27 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	30

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DATA SHEET

512MB Registered DDR SDRAM DIMM

EBD51RC4AKFA

(64M words

72 bits, 1 Rank)

Description

The EBD51RC4AKFA is a 64M words

72 bits, 1 rank

Double Data Rate (DDR) SDRAM Module, mounting 18

pieces of DDR SDRAM sealed in TSOP package.

Read and write operations are performed at the cross

points of the CK and the /CK. This high-speed data

transfer is realized by the 2-bit prefetch-pipelined

architecture. Data strobe (DQS) both for read and

write are available for high speed and reliable data bus

design. By setting extended mode register, the on-chip

Delay Locked Loop (DLL) can be set enable or disable.

This module provides high density mounting without

utilizing surface mount technology.

Decoupling

capacitors are mounted beside each TSOP on the

module board.

Features

•

184-pin socket type dual in line memory module

(DIMM)



PCB height: 30.48mm



Lead pitch: 1.27mm

•

2.5V power supply

•

Data rate: 333Mbps/266Mbps (max.)

•

2.5 V (SSTL_2 compatible) I/O

•

Double Data Rate architecture; two data transfers per

clock cycle

•

Bi-directional, data strobe (DQS) is transmitted

/received with data, to be used in capturing data at

the receiver

•

Data inputs and outputs are synchronized with DQS

•

4 internal banks for concurrent operation

(Component)

•

DQS is edge aligned with data for READs; center

aligned with data for WRITEs

•

Differential clock inputs (CK and /CK)

•

DLL aligns DQ and DQS transitions with CK

transitions

•

Commands entered on each positive CK edge; data

referenced to both edges of DQS

•

Auto precharge option for each burst access

•

Programmable burst length: 2, 4, 8

•

Programmable /CAS latency (CL): 2, 2.5

•

Refresh cycles: (8192 refresh cycles /64ms)



7.8µs maximum average periodic refresh interval

•

2 variations of refresh



Auto refresh



Self refresh

•

1 piece of PLL clock driver, 2 pieces of register

drivers and 1 piece of serial EEPROM (2k bits

EEPROM) for Presence Detect (PD)

Document No. E0377E20 (Ver. 2.0)

Date Published January 2004 (K) Japan

URL: http://www.elpida.com

Elpida

Memory,Inc. 2003-2004

EBD51RC4AKFA-7B相似产品对比

	EBD51RC4AKFA-7B	EBD51RC4AKFA	EBD51RC4AKFA-6B	EBD51RC4AKFA-7A
描述	512MB Registered DDR SDRAM DIMM (64M words X 72 bits, 1 Rank)	512MB Registered DDR SDRAM DIMM (64M words X 72 bits, 1 Rank)	512MB Registered DDR SDRAM DIMM (64M words X 72 bits, 1 Rank)	512MB Registered DDR SDRAM DIMM (64M words X 72 bits, 1 Rank)
是否Rohs认证	不符合	-	不符合	不符合
厂商名称	ELPIDA	-	ELPIDA	ELPIDA
零件包装代码	DIMM	-	DIMM	DIMM
包装说明	DIMM, DIMM184	-	DIMM, DIMM184	DIMM, DIMM184
针数	184	-	184	184
Reach Compliance Code	unknow	-	unknow	unknow
ECCN代码	EAR99	-	EAR99	EAR99
访问模式	SINGLE BANK PAGE BURST	-	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
最长访问时间	0.75 ns	-	0.7 ns	0.75 ns
其他特性	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	133 MHz	-	166 MHz	133 MHz
I/O 类型	COMMON	-	COMMON	COMMON
JESD-30 代码	R-XDMA-N184	-	R-XDMA-N184	R-XDMA-N184
JESD-609代码	e0	-	e0	e0
内存密度	4831838208 bi	-	4831838208 bi	4831838208 bi
内存集成电路类型	DDR DRAM MODULE	-	DDR DRAM MODULE	DDR DRAM MODULE
内存宽度	72	-	72	72
功能数量	1	-	1	1
端口数量	1	-	1	1
端子数量	184	-	184	184
字数	67108864 words	-	67108864 words	67108864 words
字数代码	64000000	-	64000000	64000000
工作模式	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	-	70 °C	70 °C
组织	64MX72	-	64MX72	64MX72
输出特性	3-STATE	-	3-STATE	3-STATE
封装主体材料	UNSPECIFIED	-	UNSPECIFIED	UNSPECIFIED
封装代码	DIMM	-	DIMM	DIMM
封装等效代码	DIMM184	-	DIMM184	DIMM184
封装形状	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	-	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）	235	-	235	235
电源	2.5 V	-	2.5 V	2.5 V
认证状态	Not Qualified	-	Not Qualified	Not Qualified
刷新周期	8192	-	8192	8192
自我刷新	YES	-	YES	YES
最大待机电流	0.444 A	-	0.444 A	0.444 A
最大压摆率	5.25 mA	-	6.15 mA	5.25 mA
最大供电电压 (Vsup)	2.7 V	-	2.7 V	2.7 V
最小供电电压 (Vsup)	2.3 V	-	2.3 V	2.3 V
标称供电电压 (Vsup)	2.5 V	-	2.5 V	2.5 V
表面贴装	NO	-	NO	NO
技术	CMOS	-	CMOS	CMOS
温度等级	COMMERCIAL	-	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	NO LEAD	-	NO LEAD	NO LEAD
端子节距	1.27 mm	-	1.27 mm	1.27 mm
端子位置	DUAL	-	DUAL	DUAL
处于峰值回流温度下的最长时间	30	-	NOT SPECIFIED	NOT SPECIFIED

EBD51RC4AKFA-7B

EBD51RC4AKFA-7B概述

EBD51RC4AKFA-7B规格参数

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