Freescale Semiconductor
Technical Data
Document Number: MRF9120
Rev. 10, 5/2006
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance of
this device makes it ideal for large-signal, common source amplifier applications
in 26 volt base station equipment.
•
Typical CDMA Performance @ 880 MHz, 26 Volts, I
DQ
= 1000 mA
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
Output Power — 26 Watts
Power Gain — 16 dB
Efficiency — 26%
Adjacent Channel Power —
750 kHz: -45 dBc in 30 kHz BW
1.98 MHz: -60 dBc in 30 kHz BW
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large-Signal Impedance Parameters
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
μ
″
Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
250
1.43
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
MRF9120LR3
880 MHz, 120 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFET
ARCHIVE INFORMATION
CASE 375B-04, STYLE 1
NI-860
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.45
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
©
Freescale Semiconductor, Inc., 2006, 2009. All rights reserved.
MRF9120LR3
1
Freescale Semiconductor
RF Product Device Data
ARCHIVE INFORMATION
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 200
μAdc)
Gate Quiescent Voltage
(2)
(V
DS
= 26 Vdc, I
D
= 1000 mAdc)
V
GS(th)
V
GS(Q)
V
DS(on)
2
—
—
3
3.8
0.17
4
—
0.4
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
Drain-Source On-Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 1.3 Adc)
Dynamic Characteristics
(1,3)
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
1. Each side of device measured separately.
2. Measurement made with device in push-pull configuration.
3. Part internally input matched.
C
oss
C
rss
—
—
50
2
—
—
pF
pF
(continued)
MRF9120LR3
2
Freescale Semiconductor
RF Product Device Data
ARCHIVE INFORMATION
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system)
Two-T one Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 1000 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Two-T one Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 1000 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 1000 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 1000 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Two-T one Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 1000 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
Two-T one Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 1000 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 1000 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 1000 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
Power Output, 1 dB Compression Point
(V
DD
= 26 Vdc, P
out
= 120 W CW, I
DQ
= 1000 mA,
f1 = 880.0 MHz)
Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 120 W CW, I
DQ
= 1000 mA,
f1 = 880.0 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 120 W CW, I
DQ
= 1000 mA,
f1 = 880.0 MHz)
1. Measurement made with device in push-pull configuration.
G
ps
15
16.5
—
dB
Symbol
Min
Typ
Max
Unit
η
36
39
—
%
IMD
—
-31
-28
dBc
IRL
—
-16
-9
dB
ARCHIVE INFORMATION
G
ps
—
16.5
—
dB
η
—
40.5
—
%
IMD
—
-30
—
dBc
IRL
—
-13
—
dB
P
1dB
—
120
—
W
G
ps
—
16
—
dB
η
—
51
—
%
MRF9120LR3
Freescale Semiconductor
RF Product Device Data
3
ARCHIVE INFORMATION
B6
B3
V
GG
+
C30
C11
Balun 1
R1
C8
Z16
Z18
Z20
Z22
C19
Z24
RF
INPUT
Z2
Z1
C2
C1
Z3
Z5
C3
Z7
C4
Z9
C5
Z11
C6
Z13
C7
R2
C9
B1
V
GG
+
C29
B2
C22
B5
+
C23
+
C24
+
C28
V
DD
Z15
Z25
Z17
Z19
C12
L2
Z21
Z23
C18
Balun 2
DUT
C13 C14 C15 C16 C17
C20
Z4
Z6
Z8
Z10
Z12
Z14
Z26
Z27
RF
OUTPUT
C10
L1
B4
C21
+
C25
+
C26
+
C27
V
DD
ARCHIVE INFORMATION
Z1
Z2, Z3
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
0.420″ x 0.080″ Microstrip
0.090″ x 0.420″ Microstrip
0.125″ x 0.220″ Microstrip
0.095″ x 0.220″ Microstrip
0.600″ x 0.220″ Microstrip
0.200″ x 0.630″ Microstrip
0.500″ x 0.630″ Microstrip
Z14, Z15
Z16, Z17
Z18, Z19
Z20, Z21
Z22, Z23
Z24, Z25
Z26
Z27
0.040″ x 0.630″ Microstrip
0.040″ x 0.630″ Microstrip
0.330″ x 0.630″ Microstrip
0.450″ x 0.630″ Microstrip
0.750″ x 0.220″ Microstrip
0.115″ x 0.420″ Microstrip
0.130″ x 0.080″ Microstrip
0.350″ x 0.080″ Microstrip
Figure 1. 880 MHz Broadband Test Circuit Schematic
MRF9120LR3
4
Freescale Semiconductor
RF Product Device Data
ARCHIVE INFORMATION
Table 5. 880 MHz Broadband Test Circuit Component Designations and Values
Part
B1, B3, B5, B6
B2, B4
C1, C2
C3, C6
C4
C5
C7, C8
C9, C10, C21, C22
C11, C12
C13
C14
C15
Description
Long Ferrite Beads, Surface Mount
Short Ferrite Beads, Surface Mount
68 pF Chip Capacitors
0.8 - 8.0 pF Variable Capacitors
7.5 pF Chip Capacitor
3.3 pF Chip Capacitor
11 pF Chip Capacitors
51 pF Chip Capacitors
6.2 pF Chip Capacitors
4.7 pF Chip Capacitor
5.1 pF Chip Capacitor
3.0 pF Chip Capacitor
2.7 pF Chip Capacitor
0.6 - 4.5 pF Variable Capacitor
47 pF Chip Capacitors
0.4 - 2.5 pF Variable Capacitor
10
μF,
35 V Tantalum Chip Capacitors
22
μF,
35 V Tantalum Chip Capacitors
220
μF,
50 V Electrolytic Capacitors
Xinger Surface Mount Balun Transformers
12.5 nH Mini Spring Inductors
510
Ω,
1/4 W Chip Resistors
10 mil Brass Wear Blocks
30 mil Glass Teflon
®
,
ε
r
= 2.55 Copper Clad, 2 oz Cu
Etched Circuit Board
900 MHz Push-Pull Rev 01B
900 MHz Push-Pull Rev 01B
CMR
CMR
95F787
95F786
100B680JP500X
44F3360
100B7R5JP150X
100B3R3CP150X
100B110BCA500X
100B510JP500X
100B6R2BCA150X
100B4R7BCA150X
100B5R1BCA150X
100B2R7BCA150X
100B3R0BCA150X
44F3358
100B470JP500X
44F3367
93F2975
92F1853
14F185
3A412
A04T-5
Part Number
Manufacturer
Newark
Newark
ATC
Newark
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Newark
ATC
Newark
Newark
Newark
Newark
Anaren
Coilcraft
ARCHIVE INFORMATION
C16
C17
C18, C19
C20
C29, C30
C23, C24, C25, C26
C27, C28
Balun 1, Balun 2
L1, L2
R1, R2
WB1, WB2, WB3, WB4
Board Material
PCB
MRF9120LR3
Freescale Semiconductor
RF Product Device Data
5
ARCHIVE INFORMATION
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