IRGP4640PbF
IRGP4640-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
V
CES
= 600V
I
C
= 40A, T
C
= 100°C
C
C
C
t
SC
≥
5µs, T
J(max)
= 175°C
V
CE(on)
typ. = 1.60V @ I
C
= 24A
G
E
GC
E
n-channel
TO-247AC
IRGP4640PbF
E
GC
TO-247AD
IRGP4640-EP
Applications
• Inverters
• UPS
• Welding
G
Gate
C
Collector
E
Emitter
Features
Low V
CE(ON)
and Switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive V
CE (ON)
Temperature Coefficient
5µs short circuit SOA
Lead-Free, RoHS compliant
Benefits
High efficiency in a wide range of applications and switching
frequencies
Improved reliability due to rugged hard switching performance
and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Standard Pack
Form
Quantity
Tube
25
Tube
25
Base part number
IRGP4640PbF
IRGP4640-EPbF
Package Type
TO-247AC
TO-247AD
Orderable part number
IRGP4640PbF
IRGP4640-EPbF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
ST G
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
= 15V
Max.
600
65
40
Units
V
c
Clamped Inductive Load Current, V
GE
= 20V
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
d
72
96
±20
±30
250
125
-40 to +175
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
W
A
V
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case
e
Parameter
Min.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
0.60
–––
40
Units
°C/W
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
1
www.irf.com
© 2013 International Rectifier
Submit Datasheet Feedback
October 29, 2013
IRGP4640PbF/IRGP4640-EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
∆
V
(B R )CES
/∆T
J
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T J
Min.
600
—
—
—
4.0
—
—
—
—
—
Typ.
—
0.30
1.60
2.00
—
-18
17
1.0
600
—
Max.
—
—
1.90
—
6.5
—
—
20
—
±100
Units
V
V/°C
Conditions
V
GE
= 0V, I
C
= 100µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
f
V
GE
= 0V, I
C
= 1mA (25°C-175°C)
I
C
= 24A, V
GE
= 15V, T
J
= 25°C
I
C
= 24A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 700µA
V
CE
= 50V, I
C
= 24A, PW = 80µs
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
GE
= ±20V
V
V
S
µA
nA
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
gfe
I
CES
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max.
50
15
20
0.1
0.6
0.7
40
20
105
30
0.4
0.85
1.25
40
25
125
40
1490
130
45
75
20
30
g
Units
I
C
= 24A
nC
V
GE
= 15V
V
CC
= 400V
mJ
Conditions
0.2
0.7
0.9
55
30
115
40
—
—
—
—
—
—
—
—
—
—
pF
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 96A
V
CC
= 480V, Vp =600V
Rg = 10Ω, V
GE
= +20V to 0V
—
µs
V
CC
= 400V, Vp =600V
Rg = 10Ω, V
GE
= +15V to 0V
ns
mJ
I
C
= 24A, V
CC
= 400V, V
GE
=15V
R
G
=10Ω, T
J
= 175°C
E nergy los s es include tail & diode revers e recovery
I
C
= 24A, V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, T
J
= 25°C
ns
h
E nergy los s es include tail & diode revers e recovery
h
FULL SQUARE
5
—
Notes:
Pulse width limited by max. junction temperature.
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 100µH, R
G
= 10Ω.
R
θ
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Maximum limits are based on statistical sample size characterization.
Values are influenced by parasitic L and C in measurement.
2
www.irf.com
© 2013 International Rectifier
Submit Datasheet Feedback
October 29, 2013
IRGP4640PbF/IRGP4640-EPbF
80
70
60
Load Current ( A )
50
40
30
I
For both:
Duty cycle : 50%
Tj = 175°C
Tsink = 100°C
Gate drive as specified
Power Dissipation = 125W
Squa re Wave:
V
CC
20
D io de as specified
10
0
0.1
1
f , Frequency ( kHz )
10
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
70
60
50
300
250
200
Ptot (W)
25
50
75
100
T C (°C)
125
150
175
IC (A)
40
30
20
10
0
150
100
50
0
25
50
75
100
T C (°C)
125
150
175
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 3
- Power Dissipation vs. Case
Temperature
1000
100
100
10µsec
IC (A)
10
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
VCE (V)
1000
10000
1msec
DC
IC (A)
10
1
10
100
VCE (V)
1000
Fig. 4
- Forward SOA
T
C
= 25°C, T
J
≤
175°C; V
GE
=15V
3
www.irf.com
© 2013 International Rectifier
Fig. 5
- Reverse Bias SOA
T
J
= 175°C; V
GE
=20V
Submit Datasheet Feedback
October 29, 2013
IRGP4640PbF/IRGP4640-EPbF
90
80
70
60
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
90
80
70
60
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
ICE (A)
50
40
30
20
10
0
0
1
2
3
4
VCE (V)
5
50
40
30
20
10
0
6
7
8
0
1
2
3
4
VCE (V)
5
6
7
8
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
90
80
70
60
ICE (A)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
20
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
18
16
14
50
40
30
20
10
0
0
1
2
3
4
VCE (V)
5
6
7
8
VCE (V)
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 12A
ICE = 24A
ICE = 48A
15
20
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80µs
20
18
16
14
20
18
16
14
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
VCE (V)
VCE (V)
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 12A
ICE = 24A
ICE = 48A
12
10
8
6
4
2
0
ICE = 12A
ICE = 24A
ICE = 48A
15
20
5
10
VGE (V)
15
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
4
www.irf.com
© 2013 International Rectifier
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
Submit Datasheet Feedback
October 29, 2013
IRGP4640PbF/IRGP4640-EPbF
120
100
80
ICE (A)
1800
1600
Energy (µJ)
T J = 25°C
TJ = 175°C
1400
1200
1000
800
600
400
EON
EOFF
60
40
20
0
0
5
VGE (V)
10
15
200
0
0
10
20
30
IC (A)
40
50
60
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
1000
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
1600
1400
tdOFF
1200
Swiching Time (ns)
100
tdON
tF
10
tR
Energy (µJ)
1000
800
600
400
200
EON
EOFF
1
10
20
30
IC (A)
40
50
0
0
25
50
75
100
125
Rg (Ω)
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
1000
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 400V, I
CE
= 24A; V
GE
= 15V
16
14
280
240
200
Swiching Time (ns)
tdOFF
Time (µs)
12
10
8
Current (A)
100
tdON
tF
tR
10
0
25
50
75
100
125
RG (
Ω
)
160
120
80
40
8
10
12
14
16
18
VGE (V)
6
4
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 400V, I
CE
= 24A; V
GE
= 15V
5
www.irf.com
© 2013 International Rectifier
Fig. 17
- V
GE
vs. Short Circuit Time
V
CC
= 400V; T
C
= 25°C
Submit Datasheet Feedback
October 29, 2013
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
