LGH1035
-
CONTENTS
-
1. Features
2. Package Outline Dimensions
3. Package material
4. Absolute Maximum Ratings
5. Electrical Optical Characteristics
6. Ranks
7. Taping
8. Packing Structure
9. Characteristic Diagrams
10. Reliability
11. Cautions
12. Warranty
13. Others
14. Revision history sheet
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LGH1035
1. Features
•
Package : SMD Top View Type
•
Colorless transparency
•
3.5 × 2.7 × 1.8 mm(L×W×H) small size surface mount type
•
Viewing angle : extremely wide(120˚)
•
Technology : InGaN
•
Soldering methods : IR reflow soldering
•
Taping : 8 mm conductive black carrier tape & antistatic clear cover tape.
2,000pcs/reel, Φ180 mm whee
l
2. Outline dimensions
(unit : mm)
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LGH1035
3. Package material
(1) Material construction
Number
1
2
3
4
5
6
Item
LED Chip
Gold Wire
Lead Frame
Epoxy or Silicon Resin
Heat-Resistant Polymer
Zener Diode Chip
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4. Absolute Maximum Ratings
Parameter
Power dissipation
Forward Current
*
1
Peak Forward Current
*
2
Reverse Current
Operating Temperature
Storage Temperature
Reflow Soldering Temperature
Symbol
P
D
I
F
I
FP
I
RDC
T
opr
T
stg
T
sol
Value
120
30
100
100
-30∼+85
-40∼+100
(T
a
= 25℃)
Unit
mW
mA
mA
mA
℃
℃
Reflow Soldering : 260℃ for 10 sec.
Hand Soldering : 350℃ for 3 sec.
*1. I
FP
Conditions : Pulse Width ≤ 10msec. and Duty ≤ 1/10
*2. I
RDC
Rating : This Rating for Zener Diode
5. Electrical - Optical Characteristics
Characteristic
Forward Voltage
Reverse Voltage
Dominant Wavelength
*
3
Half Angle
Symbol
V
F
V
R
λ
d
θ1/2
Test Condition
I
F
= 20mA
I
R
=10mA
I
F
= 20mA
I
F
= 20mA
Min.
-
0.8
520
-
Typ.
3.2
-
-
±60
3.8
1.5
535
-
(Ta = 25℃)
Max.
Unit
V
V
nm
deg
*
3
θ1/2
is the off-axis angle where the luminous intensity is 1/2 the peak intensity
ESD Class(Mil Std-883d Method 3015.7) based on Human Body Model(HBM) : Class 3
ESD Class(EIAJ ED-4701A) based on Machine Model(MM) : Class 4
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6. Ranks
(1) Dominant Wavelength
W
D
RANK
A
B
C
I
F
= 20mA
Test Condition
Min.
520
525
530
Typ.
-
-
-
Max.
525
530
535
nm
(Ta=25℃)
Unit
* Wavelength are tested at a current pulse duration 25ms and an accuracy of ±1 nm.
(2) Luminous intensity ranks
Iv RANK
L
M
I
F
= 20mA
N
O
600
850
-
-
850
1200
Test Condition
Min.
300
420
Typ.
-
-
Max.
420
600
(Ta=25℃)
Unit
mcd
* Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ±11%.
* Intensity Measured : 0.01sr(CIE. LED_B)
(3) Forward Voltage
V
F
RANK
0
1
2
3
4
I
F
=20mA
Test Condition
Min.
2.7
3.0
3.2
3.4
3.6
Typ.
-
-
-
-
-
Max.
3.0
3.2
3.4
3.6
3.8
(Ta=25℃)
Unit
V
* Voltages are tested at a current pulse duration of 1 ms and an accuracy of ±0.1V.
(4) Precautions On LED using
* To avoid optical difference, Please do not mix differently-ranked product.
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