Shantou Huashan Electronic Devices Co.,Ltd.
HCN2C60
Silicon Controlled Rectifier
█
Features
* Repetitive Peak Off-State Voltage : 600V
* R.M.S On-State Current(I
T(RMS)
=1.5A)
* Low On-State Voltage (1.2V(Typ.)@ I
TM
)
█
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
█
Absolute Maximum Ratings
（T
a
=25
℃
unless otherwise specified）
T
s t g
——Storage
Temperature ------------------------------------------------------
-40~125℃
T
j
——Operating
Junction Temperature ----------------------------------------------
-40~125℃
V
DRM
——Repetitive
Peak Off-State Voltage -------------------------------------------------------------------- 600V
I
T
（
RMS
）——R.M.S
On-State Current（180º Conduction Angles）------------------------------------------1.5A
I
T(AV)
——Average
On-State Current (Half Sine Wave : T
C
= 45 °C) ----------------------------------------1.0A
I
TSM
——Surge
On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) -------------------------
I
2
t
——Circuit
Fusing Considerations(t = 8.3ms) -----------------------------------------------------------
P
GM
——Forward
Peak Gate Power Dissipation (T
a
=25℃) ---------------------------------------------------
15A
2W
0.9A
2
s
P
G(AV)
——Forward
Average Gate Power Dissipation (T
a
=25℃,t=8.3ms) ---------------------------------0.1W
I
FGM
——Forward
Peak Gate Current -------------------------------------------------------------------------------- 1A
V
RGM
——Reverse
Peak Gate Voltage ------------------------------------------------------------------------------- 5V
Shantou Huashan Electronic Devices Co.,Ltd.
HCN2C60
█
Electrical Characteristics
（T
a
=25
℃
unless otherwise specified）
Symbol
I
DRM
V
TM
I
GT
Repetitive
Current
Items
Peak
Off-State
Min.
Max.
10
200
1.2
1.7
200
500
0.8
1.2
0.2
5.0
10
50
160
200
Unit
uA
V
uA
V
AK
=V
DRM
T
c
=25
℃
T
c
=125
℃
I
TM
=3A,PEAK
V
AK
=6V(DC), R
L
=100 ohm
T
c
=25
℃
T
c
= -40
℃
V
AK
=7V(DC), R
L
=100 ohm
T
c
=25
℃
T
c
= -40
℃
V
AK
=12V, R
L
=100 ohm
T
c
=125
℃
Conditions
Peak On-State Voltage (1)
Gate Trigger Current（2）
V
GT
Gate Trigger Voltage (2)
V
V
GD
Non-Trigger Gate Voltage
V
mA
I
H
Rth(j-c)
Rth(j-a)
dv/dt
Holding Current
Thermal Resistance
Thermal Resistance
Critical Rate of Rise Off-state
Voltage
2.0
I
T=100mA,
Gate open,
T
c
=25
℃
T
c
= -40
℃
Junction to Case
Junction to Ambient
V
D
=V
DRM
67% exponential
Waveform Rjk=1Kohm Tj=125
℃
℃/W
℃/W
V/µs
1. Forward current applied for 1 ms maximum duration,duty cycle
≤1%.
2. R
GK
current is not included in measurement.
█
Performance Curves
FIGURE 1 – Gate Characteristics
Max. Allowable Case Temperture (°c)
FIGURE 2 – Maximum CaseTemperture
Gate Voltage (v)
Gate
Current
(mA)
Average On-State Current (mA)
Shantou Huashan Electronic Devices Co.,Ltd.
HCN2C60
FIGURE 4-Thermal Response
FIGURE 3-Typical Forward Voltage(V)
Transient Thermal Imperdance (°c)
On-State Voltage (V)
FIGURE 5-Typical Gate Trigger Voltage VS
Junction Temperature
On-State Current(A)
Time (sec)
FIGURE 6-Typical Gate Trigger Current VS
Junction Temperature
Junction Temperature (°C)
FIGURE 7-Typical Holding Current
Junction Temperature (°C)
FIGURE 8-Power Dissipation
Holding Current (mA)
Max. Average Power
Junction Temperature (°C)
Dissipation (W)
Average On-State Current (A)
电机控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
