2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24
2K × 8 非易失性存储器模块, 200 ns, PDIP24
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | DALLAS |
| 包装说明 | 0.720 INCH, EXTENDED, DIP-24 |
| Reach Compliance Code | unknow |
| 最长访问时间 | 200 ns |
| JESD-30 代码 | R-PDIP-T24 |
| JESD-609代码 | e0 |
| 内存密度 | 16384 bi |
| 内存集成电路类型 | NON-VOLATILE SRAM MODULE |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 24 |
| 字数 | 2048 words |
| 字数代码 | 2000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 2KX8 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装等效代码 | DIP24,.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 最大待机电流 | 0.005 A |
| 最大压摆率 | 0.085 mA |
| 最大供电电压 (Vsup) | 5.25 V |
| 最小供电电压 (Vsup) | 4.75 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| DS1220AB-200-IND | DS1220 | DS1220AB | DS1220AB-150-IND | AO3423L | DS1220AD-100-IND | DS1220AD | DS1220AD-120-IND | DS1220AD-150-IND | DS1220AD-200-IND | |
|---|---|---|---|---|---|---|---|---|---|---|
| 描述 | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 | 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24 | 20V P-Channel MOSFET | 2K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDIP24 | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 | 16k Nonvolatile SRAM | 16k Nonvolatile SRAM | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| 是否Rohs认证 | 不符合 | - | - | 不符合 | - | 不符合 | - | 不符合 | 不符合 | 不符合 |
| 厂商名称 | DALLAS | - | DALLAS | DALLAS | - | DALLAS | DALLAS | DALLAS | DALLAS | DALLAS |
| 包装说明 | 0.720 INCH, EXTENDED, DIP-24 | - | - | 0.720 INCH, EXTENDED, DIP-24 | - | 0.720 INCH, EXTENDED, DIP-24 | - | 0.720 INCH, EXTENDED, DIP-24 | 0.720 INCH, EXTENDED, DIP-24 | 0.720 INCH, EXTENDED, DIP-24 |
| Reach Compliance Code | unknow | - | unknow | unknow | - | unknow | unknow | unknow | unknow | unknow |
| 最长访问时间 | 200 ns | - | 200 ns | 150 ns | - | 100 ns | 200 ns | 120 ns | 150 ns | 200 ns |
| JESD-30 代码 | R-PDIP-T24 | - | R-PDIP-T24 | R-PDIP-T24 | - | R-PDIP-T24 | R-PDIP-T24 | R-PDIP-T24 | R-PDIP-T24 | R-PDIP-T24 |
| JESD-609代码 | e0 | - | - | e0 | - | e0 | - | e0 | e0 | e0 |
| 内存密度 | 16384 bi | - | 16384 bi | 16384 bi | - | 16384 bi | 16384 bi | 16384 bi | 16384 bi | 16384 bi |
| 内存集成电路类型 | NON-VOLATILE SRAM MODULE | - | NON-VOLATILE SRAM MODULE | NON-VOLATILE SRAM MODULE | - | NON-VOLATILE SRAM MODULE | NON-VOLATILE SRAM MODULE | NON-VOLATILE SRAM MODULE | NON-VOLATILE SRAM MODULE | NON-VOLATILE SRAM MODULE |
| 内存宽度 | 8 | - | 8 | 8 | - | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | - | 1 | 1 | - | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 24 | - | 24 | 24 | - | 24 | 24 | 24 | 24 | 24 |
| 字数 | 2048 words | - | 2048 words | 2048 words | - | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words |
| 字数代码 | 2000 | - | 2000 | 2000 | - | 2000 | 2000 | 2000 | 2000 | 2000 |
| 工作模式 | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | - | 70 °C | 85 °C | - | 85 °C | 70 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -40 °C | - | - | -40 °C | - | -40 °C | - | -40 °C | -40 °C | -40 °C |
| 组织 | 2KX8 | - | 2KX8 | 2KX8 | - | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | - | - | DIP | - | DIP | - | DIP | DIP | DIP |
| 封装等效代码 | DIP24,.6 | - | - | DIP24,.6 | - | DIP24,.6 | - | DIP24,.6 | DIP24,.6 | DIP24,.6 |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | - | IN-LINE | IN-LINE | - | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | - | PARALLEL | PARALLEL | - | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 5 V | - | - | 5 V | - | 5 V | - | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.005 A | - | - | 0.005 A | - | 0.005 A | - | 0.005 A | 0.005 A | 0.005 A |
| 最大压摆率 | 0.085 mA | - | - | 0.085 mA | - | 0.085 mA | - | 0.085 mA | 0.085 mA | 0.015 mA |
| 最大供电电压 (Vsup) | 5.25 V | - | 5.25 V | 5.25 V | - | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.75 V | - | 4.75 V | 4.75 V | - | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | - | 5 V | 5 V | - | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | - | NO | NO | - | NO | NO | NO | NO | NO |
| 技术 | CMOS | - | CMOS | CMOS | - | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | - | COMMERCIAL | INDUSTRIAL | - | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | - | - | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | - | - | 2.54 mm | - | 2.54 mm | - | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | - | DUAL | DUAL | - | DUAL | DUAL | DUAL | DUAL | DUAL |
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