DDR DRAM, 16MX16, 5.5ns, CMOS, PBGA60, 8 X 9 MM, LEAD FREE, PLASTIC, VFBGA-60
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Micron Technology |
| 零件包装代码 | BGA |
| 包装说明 | VFBGA, BGA60,9X10,32 |
| 针数 | 60 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST |
| 最长访问时间 | 5.5 ns |
| 其他特性 | AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | 166 MHz |
| I/O 类型 | COMMON |
| 交错的突发长度 | 2,4,8 |
| JESD-30 代码 | R-PBGA-B60 |
| JESD-609代码 | e1 |
| 长度 | 9 mm |
| 内存密度 | 268435456 bit |
| 内存集成电路类型 | DDR DRAM |
| 内存宽度 | 16 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 60 |
| 字数 | 16777216 words |
| 字数代码 | 16000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 16MX16 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | VFBGA |
| 封装等效代码 | BGA60,9X10,32 |
| 封装形状 | RECTANGULAR |
| 封装形式 | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| 峰值回流温度（摄氏度） | 260 |
| 电源 | 1.8 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 8192 |
| 座面最大高度 | 1 mm |
| 自我刷新 | YES |
| 连续突发长度 | 2,4,8 |
| 最大待机电流 | 0.00001 A |
| 最大压摆率 | 0.12 mA |
| 最大供电电压 (Vsup) | 1.9 V |
| 最小供电电压 (Vsup) | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) |
| 端子形式 | BALL |
| 端子节距 | 0.8 mm |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | 30 |
| 宽度 | 8 mm |
| MT46H16M16LFBF-6IT | MT46H8M32LFB5-75:A | MT46H8M32LFB5-10IT | MT46H16M16LFBF-75:A | MT46H8M32LFB5-6:A | MT46H8M32LFB5-75IT | MT46H8M32LFB5-6IT | MT46H16M16LFBF-6:A | |
|---|---|---|---|---|---|---|---|---|
| 描述 | DDR DRAM, 16MX16, 5.5ns, CMOS, PBGA60, 8 X 9 MM, LEAD FREE, PLASTIC, VFBGA-60 | DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 | DDR DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 | DDR DRAM, 16MX16, 6ns, CMOS, PBGA60, 8 X 9 MM, LEAD FREE, PLASTIC, VFBGA-60 | DDR DRAM, 8MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 | DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 | DDR DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 | DDR DRAM, 16MX16, 5ns, CMOS, PBGA60, 8 X 9 MM, LEAD FREE, PLASTIC, VFBGA-60 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| 零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
| 包装说明 | VFBGA, BGA60,9X10,32 | VFBGA, BGA90,9X15,32 | VFBGA, | VFBGA, BGA60,9X10,32 | VFBGA, BGA90,9X15,32 | VFBGA, BGA90,9X15,32 | VFBGA, BGA90,9X15,32 | VFBGA, BGA60,9X10,32 |
| 针数 | 60 | 90 | 90 | 60 | 90 | 90 | 90 | 60 |
| Reach Compliance Code | compliant | compliant | compliant | unknown | unknown | compliant | compliant | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| 最长访问时间 | 5.5 ns | 6 ns | 7 ns | 6 ns | 5 ns | 6 ns | 5.5 ns | 5 ns |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| JESD-30 代码 | R-PBGA-B60 | R-PBGA-B90 | R-PBGA-B90 | R-PBGA-B60 | R-PBGA-B90 | R-PBGA-B90 | R-PBGA-B90 | R-PBGA-B60 |
| JESD-609代码 | e1 | e1 | e1 | e1 | e1 | e1 | e1 | e1 |
| 长度 | 9 mm | 13 mm | 13 mm | 9 mm | 13 mm | 13 mm | 13 mm | 9 mm |
| 内存密度 | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit |
| 内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
| 内存宽度 | 16 | 32 | 32 | 16 | 32 | 32 | 32 | 16 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 60 | 90 | 90 | 60 | 90 | 90 | 90 | 60 |
| 字数 | 16777216 words | 8388608 words | 8388608 words | 16777216 words | 8388608 words | 8388608 words | 8388608 words | 16777216 words |
| 字数代码 | 16000000 | 8000000 | 8000000 | 16000000 | 8000000 | 8000000 | 8000000 | 16000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 70 °C | 85 °C | 70 °C | 70 °C | 85 °C | 85 °C | 70 °C |
| 组织 | 16MX16 | 8MX32 | 8MX32 | 16MX16 | 8MX32 | 8MX32 | 8MX32 | 16MX16 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | VFBGA | VFBGA | VFBGA | VFBGA | VFBGA | VFBGA | VFBGA | VFBGA |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| 峰值回流温度（摄氏度） | 260 | 260 | 260 | 260 | 260 | NOT SPECIFIED | 260 | 260 |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm |
| 自我刷新 | YES | YES | YES | YES | YES | YES | YES | YES |
| 最大供电电压 (Vsup) | 1.9 V | 1.95 V | 1.9 V | 1.95 V | 1.95 V | 1.9 V | 1.9 V | 1.95 V |
| 最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL |
| 端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
| 端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 | NOT SPECIFIED | 30 | 30 |
| 宽度 | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm |
| 是否无铅 | 不含铅 | 不含铅 | 不含铅 | - | - | 不含铅 | 不含铅 | - |
| 最大时钟频率 (fCLK) | 166 MHz | 133 MHz | - | 133 MHz | 166 MHz | 133 MHz | 166 MHz | 166 MHz |
| I/O 类型 | COMMON | COMMON | - | COMMON | COMMON | COMMON | COMMON | COMMON |
| 交错的突发长度 | 2,4,8 | 2,4,8 | - | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 |
| 输出特性 | 3-STATE | 3-STATE | - | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装等效代码 | BGA60,9X10,32 | BGA90,9X15,32 | - | BGA60,9X10,32 | BGA90,9X15,32 | BGA90,9X15,32 | BGA90,9X15,32 | BGA60,9X10,32 |
| 电源 | 1.8 V | 1.8 V | - | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 刷新周期 | 8192 | 4096 | - | 8192 | 4096 | 4096 | 4096 | 8192 |
| 连续突发长度 | 2,4,8 | 2,4,8 | - | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 |
| 最大待机电流 | 0.00001 A | - | - | 0.00001 A | - | 0.00001 A | 0.00001 A | 0.00001 A |
| 最大压摆率 | 0.12 mA | 0.14 mA | - | 0.1 mA | 0.16 mA | 0.12 mA | 0.14 mA | 0.1 mA |
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